DE69630314T2 - Hubstift aus formgedächtnislegierung für eine anlage zur behandlung von halbleitern - Google Patents
Hubstift aus formgedächtnislegierung für eine anlage zur behandlung von halbleitern Download PDFInfo
- Publication number
- DE69630314T2 DE69630314T2 DE69630314T DE69630314T DE69630314T2 DE 69630314 T2 DE69630314 T2 DE 69630314T2 DE 69630314 T DE69630314 T DE 69630314T DE 69630314 T DE69630314 T DE 69630314T DE 69630314 T2 DE69630314 T2 DE 69630314T2
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- lifting
- lift
- lift pin
- lifting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910001285 shape-memory alloy Inorganic materials 0.000 title claims abstract description 24
- 239000004065 semiconductor Substances 0.000 title abstract description 9
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- 238000012545 processing Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 124
- 238000011282 treatment Methods 0.000 claims description 39
- 229910000734 martensite Inorganic materials 0.000 claims description 21
- 230000007246 mechanism Effects 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 16
- 239000000956 alloy Substances 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 229910001000 nickel titanium Inorganic materials 0.000 claims description 8
- 229910001566 austenite Inorganic materials 0.000 claims description 5
- 230000009466 transformation Effects 0.000 claims description 3
- 230000002996 emotional effect Effects 0.000 claims description 2
- 230000003446 memory effect Effects 0.000 abstract description 3
- 238000005452 bending Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 12
- 230000035882 stress Effects 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 10
- 238000012546 transfer Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000001307 helium Substances 0.000 description 5
- 229910052734 helium Inorganic materials 0.000 description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- HLXZNVUGXRDIFK-UHFFFAOYSA-N nickel titanium Chemical compound [Ti].[Ti].[Ti].[Ti].[Ti].[Ti].[Ti].[Ti].[Ti].[Ti].[Ti].[Ni].[Ni].[Ni].[Ni].[Ni].[Ni].[Ni].[Ni].[Ni].[Ni].[Ni].[Ni].[Ni].[Ni] HLXZNVUGXRDIFK-UHFFFAOYSA-N 0.000 description 4
- 230000008439 repair process Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000000112 cooling gas Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000000930 thermomechanical effect Effects 0.000 description 3
- 238000000429 assembly Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910004688 Ti-V Inorganic materials 0.000 description 1
- 229910010968 Ti—V Inorganic materials 0.000 description 1
- HZEWFHLRYVTOIW-UHFFFAOYSA-N [Ti].[Ni] Chemical compound [Ti].[Ni] HZEWFHLRYVTOIW-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum or tungsten Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- VYQRBKCKQCRYEE-UHFFFAOYSA-N ctk1a7239 Chemical compound C12=CC=CC=C2N2CC=CC3=NC=CC1=C32 VYQRBKCKQCRYEE-UHFFFAOYSA-N 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- KHYBPSFKEHXSLX-UHFFFAOYSA-N iminotitanium Chemical compound [Ti]=N KHYBPSFKEHXSLX-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000012432 intermediate storage Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000012781 shape memory material Substances 0.000 description 1
- 238000005482 strain hardening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001356 surgical procedure Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
- G03F7/70708—Chucks, e.g. chucking or un-chucking operations or structural details being electrostatic; Electrostatically deformable vacuum chucks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10S156/914—Differential etching apparatus including particular materials of construction
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/577,520 US5669977A (en) | 1995-12-22 | 1995-12-22 | Shape memory alloy lift pins for semiconductor processing equipment |
| US577520 | 1995-12-22 | ||
| PCT/US1996/020028 WO1997023899A1 (en) | 1995-12-22 | 1996-12-18 | Shape memory alloy lift pins for semiconductor processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69630314D1 DE69630314D1 (de) | 2003-11-13 |
| DE69630314T2 true DE69630314T2 (de) | 2004-07-29 |
Family
ID=24309090
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69630314T Expired - Lifetime DE69630314T2 (de) | 1995-12-22 | 1996-12-18 | Hubstift aus formgedächtnislegierung für eine anlage zur behandlung von halbleitern |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5669977A (enExample) |
| EP (1) | EP0868741B1 (enExample) |
| JP (1) | JP2000502508A (enExample) |
| KR (1) | KR100461996B1 (enExample) |
| CN (1) | CN1209216A (enExample) |
| AT (1) | ATE251800T1 (enExample) |
| DE (1) | DE69630314T2 (enExample) |
| WO (1) | WO1997023899A1 (enExample) |
Families Citing this family (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3028462B2 (ja) * | 1995-05-12 | 2000-04-04 | 東京エレクトロン株式会社 | 熱処理装置 |
| US5885353A (en) | 1996-06-21 | 1999-03-23 | Micron Technology, Inc. | Thermal conditioning apparatus |
| US5848670A (en) * | 1996-12-04 | 1998-12-15 | Applied Materials, Inc. | Lift pin guidance apparatus |
| US6168668B1 (en) * | 1998-11-25 | 2001-01-02 | Applied Materials, Inc. | Shadow ring and guide for supporting the shadow ring in a chamber |
| JP2000223549A (ja) * | 1999-01-29 | 2000-08-11 | Canon Inc | 基板搬送装置、基板搬送方法、基板搬送用ハンド機構、灰化処理装置及び灰化処理方法 |
| US6236300B1 (en) | 1999-03-26 | 2001-05-22 | R. Sjhon Minners | Bistable micro-switch and method of manufacturing the same |
| US6958098B2 (en) * | 2000-02-28 | 2005-10-25 | Applied Materials, Inc. | Semiconductor wafer support lift-pin assembly |
| US6572708B2 (en) * | 2000-02-28 | 2003-06-03 | Applied Materials Inc. | Semiconductor wafer support lift-pin assembly |
| US6640432B1 (en) * | 2000-04-12 | 2003-11-04 | Formfactor, Inc. | Method of fabricating shaped springs |
| US7324635B2 (en) | 2000-05-04 | 2008-01-29 | Telemaze Llc | Branch calling and caller ID based call routing telephone features |
| US6422010B1 (en) * | 2000-06-11 | 2002-07-23 | Nitinol Technologies, Inc. | Manufacturing of Nitinol parts and forms |
| KR100769826B1 (ko) * | 2001-05-22 | 2007-10-23 | 엘지.필립스 엘시디 주식회사 | 리프터핀 유닛 |
| TW588403B (en) * | 2001-06-25 | 2004-05-21 | Tokyo Electron Ltd | Substrate treating device and substrate treating method |
| DE10134513A1 (de) * | 2001-07-16 | 2003-01-30 | Unaxis Balzers Ag | Hebe-und Stützvorichtung |
| DE10232478A1 (de) * | 2002-07-17 | 2004-02-12 | Infineon Technologies Ag | Waferhubvorrichtung |
| US6779963B2 (en) * | 2002-11-21 | 2004-08-24 | General Electric Company | Apparatus and method to control force exerted on steam turbines by inlet pipes |
| EP1475670B1 (en) * | 2003-05-09 | 2008-10-29 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1475667A1 (en) * | 2003-05-09 | 2004-11-10 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR100808374B1 (ko) * | 2003-12-27 | 2008-02-27 | 동부일렉트로닉스 주식회사 | 반도체 제조설비의 포토레지스트 경화장치 |
| CN100371783C (zh) * | 2005-01-27 | 2008-02-27 | 中华映管股份有限公司 | 反应室的顶升栓装置 |
| US7744730B2 (en) * | 2005-04-14 | 2010-06-29 | Tango Systems, Inc. | Rotating pallet in sputtering system |
| WO2007062199A2 (en) * | 2005-11-23 | 2007-05-31 | Materials And Technologies Corporation | Device and method for holding a substrate |
| US7867176B2 (en) * | 2005-12-27 | 2011-01-11 | Cordis Corporation | Variable stiffness guidewire |
| US7785317B2 (en) | 2006-03-29 | 2010-08-31 | Codman & Shurtleff, Inc. | Joined metal tubing and method of manufacture |
| US8690938B2 (en) * | 2006-05-26 | 2014-04-08 | DePuy Synthes Products, LLC | Occlusion device combination of stent and mesh with diamond-shaped porosity |
| US8118859B2 (en) * | 2006-05-26 | 2012-02-21 | Codman & Shurtleff, Inc. | Occlusion device combination of stent and mesh having offset parallelogram porosity |
| US7766935B2 (en) | 2006-06-12 | 2010-08-03 | Codman & Shurtleff, Inc. | Modified headpiece for hydraulic coil deployment system |
| US7670353B2 (en) * | 2006-06-12 | 2010-03-02 | Codman & Shurtleff, Inc. | Modified headpiece for hydraulic coil deployment system |
| US8585732B2 (en) * | 2006-06-14 | 2013-11-19 | DePuy Synthes Products, LLC | Retrieval device with sidewall grippers |
| TWI456683B (zh) * | 2007-06-29 | 2014-10-11 | Ulvac Inc | 基板搬送機器人 |
| WO2010009050A2 (en) * | 2008-07-15 | 2010-01-21 | Applied Materials, Inc. | Substrate lift pin sensor |
| US8802545B2 (en) | 2011-03-14 | 2014-08-12 | Plasma-Therm Llc | Method and apparatus for plasma dicing a semi-conductor wafer |
| US9105705B2 (en) | 2011-03-14 | 2015-08-11 | Plasma-Therm Llc | Method and apparatus for plasma dicing a semi-conductor wafer |
| US8946058B2 (en) | 2011-03-14 | 2015-02-03 | Plasma-Therm Llc | Method and apparatus for plasma dicing a semi-conductor wafer |
| US8643313B2 (en) * | 2011-12-29 | 2014-02-04 | General Electric Company | Cyclotron actuator using a shape memory alloy |
| CN105830208B (zh) | 2013-10-30 | 2019-07-16 | 株式会社尼康 | 基板保持装置、曝光装置及器件制造方法 |
| US20150203955A1 (en) * | 2013-11-07 | 2015-07-23 | Carnegie Mellon University, A Pennsylvania Non-Profit Corporation | Apparatus and method for making composition spread alloy films |
| CN105363627A (zh) * | 2015-10-09 | 2016-03-02 | 昆山希盟自动化科技有限公司 | Ccd对位的loca贴合机 |
| CN106711080A (zh) * | 2015-11-16 | 2017-05-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 承载装置及半导体加工设备 |
| US10784142B2 (en) | 2018-01-09 | 2020-09-22 | Varian Semiconductor Equipment Associates, Inc. | Lift pin system for wafer handling |
| KR102420343B1 (ko) * | 2019-11-04 | 2022-07-14 | 세메스 주식회사 | 공정챔버 |
| US11335585B2 (en) * | 2020-05-08 | 2022-05-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Vacuum wafer chuck for manufacturing semiconductor devices |
| CN114864452B (zh) * | 2022-05-31 | 2024-06-21 | 北京北方华创微电子装备有限公司 | 半导体热处理设备的冷却装置及半导体热处理设备 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4340462A (en) * | 1981-02-13 | 1982-07-20 | Lam Research Corporation | Adjustable electrode plasma processing chamber |
| JPS5816078A (ja) * | 1981-07-17 | 1983-01-29 | Toshiba Corp | プラズマエツチング装置 |
| GB2154365A (en) * | 1984-02-10 | 1985-09-04 | Philips Electronic Associated | Loading semiconductor wafers on an electrostatic chuck |
| US4665906A (en) * | 1983-10-14 | 1987-05-19 | Raychem Corporation | Medical devices incorporating sim alloy elements |
| JPS60167346A (ja) * | 1984-12-21 | 1985-08-30 | Hitachi Ltd | 真空処理装置 |
| JPH0348204Y2 (enExample) * | 1985-03-20 | 1991-10-15 | ||
| JPS61271863A (ja) * | 1985-05-27 | 1986-12-02 | Toshiba Corp | 半導体装置の外部リ−ド |
| US4615755A (en) * | 1985-08-07 | 1986-10-07 | The Perkin-Elmer Corporation | Wafer cooling and temperature control for a plasma etching system |
| US4733632A (en) * | 1985-09-25 | 1988-03-29 | Tokyo Electron Limited | Wafer feeding apparatus |
| US4743079A (en) * | 1986-09-29 | 1988-05-10 | The Boeing Company | Clamping device utilizing a shape memory alloy |
| US4842683A (en) * | 1986-12-19 | 1989-06-27 | Applied Materials, Inc. | Magnetic field-enhanced plasma etch reactor |
| US5215619A (en) * | 1986-12-19 | 1993-06-01 | Applied Materials, Inc. | Magnetic field-enhanced plasma etch reactor |
| JPH0665742B2 (ja) * | 1987-01-08 | 1994-08-24 | 株式会社ト−キン | 形状記憶ＴｉＮｉＶ合金の製造方法 |
| US4790258A (en) * | 1987-04-03 | 1988-12-13 | Tegal Corporation | Magnetically coupled wafer lift pins |
| DE3909630A1 (de) * | 1989-03-23 | 1990-09-27 | Daimler Benz Ag | Spannwerkzeug zum kraftschluessigen und hochpraezisen spannen von werkstuecken |
| US4948458A (en) * | 1989-08-14 | 1990-08-14 | Lam Research Corporation | Method and apparatus for producing magnetically-coupled planar plasma |
| US5200232A (en) * | 1990-12-11 | 1993-04-06 | Lam Research Corporation | Reaction chamber design and method to minimize particle generation in chemical vapor deposition reactors |
| JP3039583B2 (ja) * | 1991-05-30 | 2000-05-08 | 株式会社日立製作所 | バルブ及びそれを用いた半導体製造装置 |
| JPH06151366A (ja) * | 1992-11-06 | 1994-05-31 | Nippon Steel Corp | ドライエッチング装置 |
-
1995
- 1995-12-22 US US08/577,520 patent/US5669977A/en not_active Expired - Lifetime
-
1996
- 1996-12-18 EP EP96944410A patent/EP0868741B1/en not_active Expired - Lifetime
- 1996-12-18 DE DE69630314T patent/DE69630314T2/de not_active Expired - Lifetime
- 1996-12-18 KR KR10-1998-0704817A patent/KR100461996B1/ko not_active Expired - Fee Related
- 1996-12-18 CN CN96180033A patent/CN1209216A/zh active Pending
- 1996-12-18 WO PCT/US1996/020028 patent/WO1997023899A1/en not_active Ceased
- 1996-12-18 AT AT96944410T patent/ATE251800T1/de not_active IP Right Cessation
- 1996-12-18 JP JP09523751A patent/JP2000502508A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP0868741B1 (en) | 2003-10-08 |
| KR100461996B1 (ko) | 2005-04-08 |
| CN1209216A (zh) | 1999-02-24 |
| WO1997023899A1 (en) | 1997-07-03 |
| EP0868741A1 (en) | 1998-10-07 |
| JP2000502508A (ja) | 2000-02-29 |
| KR19990076703A (ko) | 1999-10-15 |
| US5669977A (en) | 1997-09-23 |
| DE69630314D1 (de) | 2003-11-13 |
| ATE251800T1 (de) | 2003-10-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69630314T2 (de) | Hubstift aus formgedächtnislegierung für eine anlage zur behandlung von halbleitern | |
| DE60030968T2 (de) | Transfermethode für halbleiterscheiben und haltering | |
| DE69916435T2 (de) | Verfahren zur verbesserung der ductilität von nitinol | |
| DE60220787T2 (de) | Glatter mehrteiliger substratträger für cvd | |
| WO1996001483A1 (de) | Mikromechanisches bauelement und herstellungsverfahren | |
| DE102009018156B4 (de) | Vorrichtung und Verfahren zum Trennen eines Substrats von einem Trägersubstrat | |
| EP2216417B1 (de) | Heizvorrichtung zur Erwärmung einer metallenen Platine | |
| DE60037188T2 (de) | Verfahren zum Betreiben eines Suszeptors für Halbleiterscheiben | |
| DE3630035C2 (de) | Vorrichtung zum Einladen eines Halbleiterwafers in eine Behandlungskammer und Ionenimplantationsvorrichtung mit dieser Vorrichtung | |
| DE102017105374A1 (de) | Vorrichtung zum Abscheiden einer strukturierten Schicht auf einem Substrat sowie Verfahren zum Einrichten der Vorrichtung | |
| DE69400142T2 (de) | Trägerkassette für Siliziumscheiben | |
| DE3421623C2 (de) | Thermisch betätigte Vorrichtung mit einer Memory-Legierung | |
| DE3853216T2 (de) | Vorrichtung zur zonenschmelzrekristallisierung. | |
| DE102017105379A1 (de) | Substrathalteranordnung mit Maskenträger | |
| WO2020048833A1 (de) | Waferboot | |
| DE19753523B4 (de) | Mikrogreifer | |
| DE10201863B4 (de) | Waferraumhaltevorrichtung, die auf einer elektrostatischen Aufnahmevorrichtung installiert ist, und Verfahren zur Herstellung derselben | |
| DE1256995B (de) | Verfahren zur Erzeugung supraleitender Schichten fuer Lochspeicherelemente durch Vakuumaufdampfen | |
| WO2000026951A1 (de) | Verfahren und einrichtung zum ablösen eines ausschnitts einer materialschicht | |
| DE102018128438B4 (de) | Verfahren zur Herstellung von einteiligen Gelenken, Aktoren, Sensoren, Hub- undVerstellelementen, Stellgliedern in Regelkreisen oder Federpaketen in Dämpfungssystemen aus Formgedächtnismaterial sowie einteilige Gelenke, Aktoren, Sensoren, Hub- und Verstellelemente, Stellglieder in Regelkreisen oder Federpakete in Dämpfungssystemen aus Formgedächtnismaterial | |
| DE60205096T2 (de) | Verfahren zur trägerung eines glasbasismaterials und tragestift | |
| DE102022122478A1 (de) | Transferstempel und verfahren zum erzeugen eines transferstempels | |
| DE102016112762B4 (de) | Schichtstruktur und Verfahren zum Herstellen einer Schichtstruktur | |
| WO1997020350A2 (de) | Halbleiterbauelement mit schottkykontakt und verfahren zu dessen herstellung | |
| DE29606249U1 (de) | Spiralfeder aus einer Formgedächtnislegierung |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |