JP2000349025A - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法

Info

Publication number
JP2000349025A
JP2000349025A JP2000083162A JP2000083162A JP2000349025A JP 2000349025 A JP2000349025 A JP 2000349025A JP 2000083162 A JP2000083162 A JP 2000083162A JP 2000083162 A JP2000083162 A JP 2000083162A JP 2000349025 A JP2000349025 A JP 2000349025A
Authority
JP
Japan
Prior art keywords
film
circuit
region
semiconductor film
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000083162A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000349025A5 (enExample
Inventor
Shoji Miyanaga
昭治 宮永
Toru Mitsuki
亨 三津木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2000083162A priority Critical patent/JP2000349025A/ja
Publication of JP2000349025A publication Critical patent/JP2000349025A/ja
Publication of JP2000349025A5 publication Critical patent/JP2000349025A5/ja
Withdrawn legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2000083162A 1999-03-26 2000-03-24 半導体装置の作製方法 Withdrawn JP2000349025A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000083162A JP2000349025A (ja) 1999-03-26 2000-03-24 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11-84865 1999-03-26
JP8486599 1999-03-26
JP2000083162A JP2000349025A (ja) 1999-03-26 2000-03-24 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2000349025A true JP2000349025A (ja) 2000-12-15
JP2000349025A5 JP2000349025A5 (enExample) 2007-04-26

Family

ID=26425841

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000083162A Withdrawn JP2000349025A (ja) 1999-03-26 2000-03-24 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP2000349025A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006032859A (ja) * 2004-07-21 2006-02-02 Siltronic Japan Corp シリコンウェハの不純物の除去方法及び分析方法
US7361577B2 (en) 2001-01-26 2008-04-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0745519A (ja) * 1993-07-27 1995-02-14 Semiconductor Energy Lab Co Ltd 半導体装置およびその製造方法
JPH0794757A (ja) * 1993-07-30 1995-04-07 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JPH0964052A (ja) * 1995-08-28 1997-03-07 Mitsubishi Materials Shilicon Corp シリコンウェーハおよびその製造方法
JPH09312260A (ja) * 1996-01-19 1997-12-02 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JPH10242099A (ja) * 1997-02-28 1998-09-11 Pure Retsukusu:Kk 半導体基板内部の洗浄方法および洗浄装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0745519A (ja) * 1993-07-27 1995-02-14 Semiconductor Energy Lab Co Ltd 半導体装置およびその製造方法
JPH0794757A (ja) * 1993-07-30 1995-04-07 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JPH0964052A (ja) * 1995-08-28 1997-03-07 Mitsubishi Materials Shilicon Corp シリコンウェーハおよびその製造方法
JPH09312260A (ja) * 1996-01-19 1997-12-02 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JPH10242099A (ja) * 1997-02-28 1998-09-11 Pure Retsukusu:Kk 半導体基板内部の洗浄方法および洗浄装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7361577B2 (en) 2001-01-26 2008-04-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP2006032859A (ja) * 2004-07-21 2006-02-02 Siltronic Japan Corp シリコンウェハの不純物の除去方法及び分析方法

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