JP2000290638A5 - - Google Patents
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- Publication number
- JP2000290638A5 JP2000290638A5 JP1999104882A JP10488299A JP2000290638A5 JP 2000290638 A5 JP2000290638 A5 JP 2000290638A5 JP 1999104882 A JP1999104882 A JP 1999104882A JP 10488299 A JP10488299 A JP 10488299A JP 2000290638 A5 JP2000290638 A5 JP 2000290638A5
- Authority
- JP
- Japan
- Prior art keywords
- metal film
- semiconductor device
- manufacturing
- insulating film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 claims 36
- 239000002184 metal Substances 0.000 claims 36
- 238000004519 manufacturing process Methods 0.000 claims 20
- 239000004065 semiconductor Substances 0.000 claims 20
- 238000005498 polishing Methods 0.000 claims 17
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims 12
- 239000000758 substrate Substances 0.000 claims 12
- 238000000034 method Methods 0.000 claims 10
- 239000002562 thickening agent Substances 0.000 claims 9
- 229920002125 Sokalan® Polymers 0.000 claims 7
- 230000001590 oxidative effect Effects 0.000 claims 7
- 239000004584 polyacrylic acid Substances 0.000 claims 7
- 239000007788 liquid Substances 0.000 claims 6
- 239000007800 oxidant agent Substances 0.000 claims 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 5
- 239000006061 abrasive grain Substances 0.000 claims 5
- 229910044991 metal oxide Inorganic materials 0.000 claims 5
- 150000004706 metal oxides Chemical class 0.000 claims 5
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 4
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims 4
- 239000004020 conductor Substances 0.000 claims 4
- 229910052802 copper Inorganic materials 0.000 claims 4
- 239000010949 copper Substances 0.000 claims 4
- 238000001035 drying Methods 0.000 claims 4
- 239000001630 malic acid Substances 0.000 claims 4
- 235000011090 malic acid Nutrition 0.000 claims 4
- 239000000126 substance Substances 0.000 claims 4
- 238000005406 washing Methods 0.000 claims 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 4
- 239000000463 material Substances 0.000 claims 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 claims 2
- 150000007524 organic acids Chemical class 0.000 claims 2
- 229920000058 polyacrylate Polymers 0.000 claims 2
- 150000003839 salts Chemical class 0.000 claims 2
- 239000000243 solution Substances 0.000 claims 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims 1
- 239000005749 Copper compound Substances 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910001080 W alloy Inorganic materials 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 150000003863 ammonium salts Chemical class 0.000 claims 1
- 239000007864 aqueous solution Substances 0.000 claims 1
- 150000001880 copper compounds Chemical class 0.000 claims 1
- 238000005260 corrosion Methods 0.000 claims 1
- 230000007797 corrosion Effects 0.000 claims 1
- 229920006037 cross link polymer Polymers 0.000 claims 1
- 230000002401 inhibitory effect Effects 0.000 claims 1
- 239000011344 liquid material Substances 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 150000003658 tungsten compounds Chemical class 0.000 claims 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10488299A JP3941284B2 (ja) | 1999-04-13 | 1999-04-13 | 研磨方法 |
| KR10-2000-0017824A KR100514536B1 (ko) | 1999-04-13 | 2000-04-06 | 연마방법 |
| TW089106538A TW478055B (en) | 1999-04-13 | 2000-04-08 | Method for polishing |
| US09/548,289 US6561883B1 (en) | 1999-04-13 | 2000-04-12 | Method of polishing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10488299A JP3941284B2 (ja) | 1999-04-13 | 1999-04-13 | 研磨方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000290638A JP2000290638A (ja) | 2000-10-17 |
| JP2000290638A5 true JP2000290638A5 (enExample) | 2004-09-16 |
| JP3941284B2 JP3941284B2 (ja) | 2007-07-04 |
Family
ID=14392567
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10488299A Expired - Fee Related JP3941284B2 (ja) | 1999-04-13 | 1999-04-13 | 研磨方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6561883B1 (enExample) |
| JP (1) | JP3941284B2 (enExample) |
| KR (1) | KR100514536B1 (enExample) |
| TW (1) | TW478055B (enExample) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU5445899A (en) | 1998-08-31 | 2000-03-21 | Hitachi Chemical Company, Ltd. | Abrasive liquid for metal and method for polishing |
| JP3941284B2 (ja) * | 1999-04-13 | 2007-07-04 | 株式会社日立製作所 | 研磨方法 |
| US6551935B1 (en) * | 2000-08-31 | 2003-04-22 | Micron Technology, Inc. | Slurry for use in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods |
| JP2004526308A (ja) * | 2001-01-16 | 2004-08-26 | キャボット マイクロエレクトロニクス コーポレイション | シュウ酸アンモニウムを含有する研磨系及び方法 |
| US6632259B2 (en) * | 2001-05-18 | 2003-10-14 | Rodel Holdings, Inc. | Chemical mechanical polishing compositions and methods relating thereto |
| US7008554B2 (en) * | 2001-07-13 | 2006-03-07 | Applied Materials, Inc. | Dual reduced agents for barrier removal in chemical mechanical polishing |
| TW591089B (en) * | 2001-08-09 | 2004-06-11 | Cheil Ind Inc | Slurry composition for use in chemical mechanical polishing of metal wiring |
| TW503522B (en) * | 2001-09-04 | 2002-09-21 | Nanya Plastics Corp | Method for preventing short circuit between metal conduction wires |
| US6821897B2 (en) * | 2001-12-05 | 2004-11-23 | Cabot Microelectronics Corporation | Method for copper CMP using polymeric complexing agents |
| US20030119692A1 (en) * | 2001-12-07 | 2003-06-26 | So Joseph K. | Copper polishing cleaning solution |
| KR100919553B1 (ko) * | 2002-10-25 | 2009-10-01 | 주식회사 하이닉스반도체 | 연마제를 포함하지 않는 금속용 ｃｍｐ 용액 |
| US20040092102A1 (en) * | 2002-11-12 | 2004-05-13 | Sachem, Inc. | Chemical mechanical polishing composition and method |
| US6866560B1 (en) * | 2003-01-09 | 2005-03-15 | Sandia Corporation | Method for thinning specimen |
| US20040175918A1 (en) * | 2003-03-05 | 2004-09-09 | Taiwan Semiconductor Manufacturing Company | Novel formation of an aluminum contact pad free of plasma induced damage by applying CMP |
| US7736405B2 (en) * | 2003-05-12 | 2010-06-15 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for copper and associated materials and method of using same |
| US20040266185A1 (en) * | 2003-06-30 | 2004-12-30 | Texas Instruments Incorporated | Method for reducing integrated circuit defects |
| US7186653B2 (en) * | 2003-07-30 | 2007-03-06 | Climax Engineered Materials, Llc | Polishing slurries and methods for chemical mechanical polishing |
| US20050022456A1 (en) * | 2003-07-30 | 2005-02-03 | Babu S. V. | Polishing slurry and method for chemical-mechanical polishing of copper |
| KR100672940B1 (ko) * | 2004-08-03 | 2007-01-24 | 삼성전자주식회사 | 금속막을 위한 화학적기계적 연마 슬러리 및 이를 이용한금속막의 화학적기계적 연마 방법 |
| US20060163206A1 (en) * | 2005-01-25 | 2006-07-27 | Irina Belov | Novel polishing slurries and abrasive-free solutions having a multifunctional activator |
| US20060223320A1 (en) * | 2005-03-30 | 2006-10-05 | Cooper Kevin E | Polishing technique to minimize abrasive removal of material and composition therefor |
| US7311856B2 (en) * | 2005-03-30 | 2007-12-25 | Cabot Microelectronics Corporation | Polymeric inhibitors for enhanced planarization |
| JP4776269B2 (ja) * | 2005-04-28 | 2011-09-21 | 株式会社東芝 | 金属膜ｃｍｐ用スラリー、および半導体装置の製造方法 |
| EP1879223A4 (en) * | 2005-05-06 | 2009-07-22 | Asahi Glass Co Ltd | COMPOSITION FOR POLISHING A COPPER WIRING AND METHOD FOR POLISHING THE SURFACE OF AN INTEGRATED SEMICONDUCTOR CIRCUIT |
| EP1929512A2 (en) * | 2005-08-05 | 2008-06-11 | Advanced Technology Materials, Inc. | High throughput chemical mechanical polishing composition for metal film planarization |
| US20070117497A1 (en) * | 2005-11-22 | 2007-05-24 | Cabot Microelectronics Corporation | Friction reducing aid for CMP |
| JPWO2007116770A1 (ja) * | 2006-04-03 | 2009-08-20 | Jsr株式会社 | 化学機械研磨用水系分散体および化学機械研磨方法、ならびに化学機械研磨用水系分散体を調製するためのキット |
| US20100087065A1 (en) * | 2007-01-31 | 2010-04-08 | Advanced Technology Materials, Inc. | Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications |
| US7988794B2 (en) * | 2007-02-07 | 2011-08-02 | Infineon Technologies Ag | Semiconductor device and method |
| US7805976B2 (en) * | 2007-04-02 | 2010-10-05 | United Technologies Corporation | Method for checking surface condition after cleaning |
| US20090215266A1 (en) * | 2008-02-22 | 2009-08-27 | Thomas Terence M | Polishing Copper-Containing patterned wafers |
| WO2010032616A1 (ja) * | 2008-09-19 | 2010-03-25 | 三菱瓦斯化学株式会社 | 銅配線表面保護液および半導体回路の製造方法 |
| KR101084676B1 (ko) * | 2008-12-03 | 2011-11-22 | 주식회사 엘지화학 | 1차 화학적 기계적 연마용 슬러리 조성물 및 화학적 기계적 연마 방법 |
| JP6779701B2 (ja) * | 2016-08-05 | 2020-11-04 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び基板処理方法を実行させるプログラムが記録された記憶媒体 |
| JP7220532B2 (ja) * | 2018-07-31 | 2023-02-10 | ニッタ・デュポン株式会社 | 研磨用スラリー |
| CN109877656B (zh) * | 2019-03-22 | 2024-03-22 | 湖南科技大学 | 一种电化学增稠抛光装置 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ZA772965B (en) * | 1976-05-19 | 1978-06-28 | Dow Chemical Co | Ore grinding process |
| NL8701407A (nl) * | 1987-06-17 | 1989-01-16 | Vunderink Ate | Een oppervlakte techniek die het massaal slijpen en polijsten van metalen artikelen in rotofinish apparatuur sneller doet verlopen. |
| US4954142A (en) | 1989-03-07 | 1990-09-04 | International Business Machines Corporation | Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor |
| JPH08302338A (ja) * | 1995-05-15 | 1996-11-19 | Sony Corp | スラリーおよびこれを用いた半導体装置の製造方法 |
| US5860848A (en) * | 1995-06-01 | 1999-01-19 | Rodel, Inc. | Polishing silicon wafers with improved polishing slurries |
| US6126528A (en) * | 1995-09-18 | 2000-10-03 | 3M Innovative Properties Company | Preformed ophthalmic lens base block with textured surface |
| KR100197535B1 (ko) * | 1996-06-27 | 1999-06-15 | 김영환 | 반도체 소자의 금속 배선 형성방법 |
| JPH1022241A (ja) * | 1996-07-08 | 1998-01-23 | Tokyo Fine Chem Kk | シリコンウェハ用ラップ液およびラップ剤 |
| US5664990A (en) * | 1996-07-29 | 1997-09-09 | Integrated Process Equipment Corp. | Slurry recycling in CMP apparatus |
| US5773364A (en) * | 1996-10-21 | 1998-06-30 | Motorola, Inc. | Method for using ammonium salt slurries for chemical mechanical polishing (CMP) |
| JPH10204417A (ja) * | 1997-01-27 | 1998-08-04 | Kao Corp | 加工用助剤組成物、研磨材組成物、表面加工方法及び基板の製造方法 |
| US6022400A (en) * | 1997-05-22 | 2000-02-08 | Nippon Steel Corporation | Polishing abrasive grains, polishing agent and polishing method |
| US6121143A (en) * | 1997-09-19 | 2000-09-19 | 3M Innovative Properties Company | Abrasive articles comprising a fluorochemical agent for wafer surface modification |
| US6190237B1 (en) * | 1997-11-06 | 2001-02-20 | International Business Machines Corporation | pH-buffered slurry and use thereof for polishing |
| US6019667A (en) * | 1998-05-26 | 2000-02-01 | Dow Corning Corporation | Method for grinding silicon metalloid |
| US6217416B1 (en) * | 1998-06-26 | 2001-04-17 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper/tantalum substrates |
| TW455626B (en) * | 1998-07-23 | 2001-09-21 | Eternal Chemical Co Ltd | Chemical mechanical abrasive composition for use in semiconductor processing |
| US6206756B1 (en) * | 1998-11-10 | 2001-03-27 | Micron Technology, Inc. | Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad |
| JP3941284B2 (ja) * | 1999-04-13 | 2007-07-04 | 株式会社日立製作所 | 研磨方法 |
-
1999
- 1999-04-13 JP JP10488299A patent/JP3941284B2/ja not_active Expired - Fee Related
-
2000
- 2000-04-06 KR KR10-2000-0017824A patent/KR100514536B1/ko not_active Expired - Fee Related
- 2000-04-08 TW TW089106538A patent/TW478055B/zh not_active IP Right Cessation
- 2000-04-12 US US09/548,289 patent/US6561883B1/en not_active Expired - Fee Related
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