TW478055B - Method for polishing - Google Patents
Method for polishing Download PDFInfo
- Publication number
- TW478055B TW478055B TW089106538A TW89106538A TW478055B TW 478055 B TW478055 B TW 478055B TW 089106538 A TW089106538 A TW 089106538A TW 89106538 A TW89106538 A TW 89106538A TW 478055 B TW478055 B TW 478055B
- Authority
- TW
- Taiwan
- Prior art keywords
- metal film
- aforementioned
- polishing
- substrate
- acid
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 81
- 238000000034 method Methods 0.000 title claims abstract description 45
- 239000000126 substance Substances 0.000 claims abstract description 24
- 239000002562 thickening agent Substances 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000007800 oxidant agent Substances 0.000 claims abstract description 10
- 238000000227 grinding Methods 0.000 claims description 56
- 229910052751 metal Inorganic materials 0.000 claims description 51
- 239000002184 metal Substances 0.000 claims description 51
- 239000007788 liquid Substances 0.000 claims description 50
- 239000010949 copper Substances 0.000 claims description 26
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 24
- 229910052802 copper Inorganic materials 0.000 claims description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 19
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 15
- 239000002253 acid Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 229920002125 Sokalan® Polymers 0.000 claims description 12
- 239000004584 polyacrylic acid Substances 0.000 claims description 12
- 238000011049 filling Methods 0.000 claims description 11
- 239000007864 aqueous solution Substances 0.000 claims description 10
- 239000000243 solution Substances 0.000 claims description 10
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 9
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 9
- 230000002079 cooperative effect Effects 0.000 claims description 9
- 239000001630 malic acid Substances 0.000 claims description 9
- 235000011090 malic acid Nutrition 0.000 claims description 9
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 9
- 229910052721 tungsten Inorganic materials 0.000 claims description 9
- 239000010937 tungsten Substances 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 8
- 230000001590 oxidative effect Effects 0.000 claims description 8
- 150000003839 salts Chemical class 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 6
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 5
- 239000012530 fluid Substances 0.000 claims description 5
- 229920006037 cross link polymer Polymers 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 150000004767 nitrides Chemical group 0.000 claims description 4
- 150000007524 organic acids Chemical class 0.000 claims description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 229920000058 polyacrylate Polymers 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims 4
- 238000002360 preparation method Methods 0.000 claims 3
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 claims 2
- 238000005406 washing Methods 0.000 claims 2
- 239000005749 Copper compound Substances 0.000 claims 1
- 229910001080 W alloy Inorganic materials 0.000 claims 1
- 150000001880 copper compounds Chemical class 0.000 claims 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims 1
- 150000002363 hafnium compounds Chemical class 0.000 claims 1
- 239000004615 ingredient Substances 0.000 claims 1
- 238000005272 metallurgy Methods 0.000 claims 1
- DUWWHGPELOTTOE-UHFFFAOYSA-N n-(5-chloro-2,4-dimethoxyphenyl)-3-oxobutanamide Chemical compound COC1=CC(OC)=C(NC(=O)CC(C)=O)C=C1Cl DUWWHGPELOTTOE-UHFFFAOYSA-N 0.000 claims 1
- 238000007517 polishing process Methods 0.000 claims 1
- 229920000768 polyamine Polymers 0.000 claims 1
- 235000019260 propionic acid Nutrition 0.000 claims 1
- 239000013589 supplement Substances 0.000 claims 1
- 230000035900 sweating Effects 0.000 claims 1
- 230000003628 erosive effect Effects 0.000 abstract description 7
- 239000002002 slurry Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 48
- 239000010410 layer Substances 0.000 description 18
- 239000002245 particle Substances 0.000 description 15
- 238000005530 etching Methods 0.000 description 14
- 230000000694 effects Effects 0.000 description 9
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 8
- 229910000881 Cu alloy Inorganic materials 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000006061 abrasive grain Substances 0.000 description 7
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical class OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 6
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 6
- 239000004744 fabric Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- BDAGIHXWWSANSR-UHFFFAOYSA-N Formic acid Chemical compound OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 4
- 239000003082 abrasive agent Substances 0.000 description 4
- 239000003518 caustics Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000001361 adipic acid Substances 0.000 description 3
- 235000011037 adipic acid Nutrition 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- MLIWQXBKMZNZNF-KUHOPJCQSA-N (2e)-2,6-bis[(4-azidophenyl)methylidene]-4-methylcyclohexan-1-one Chemical compound O=C1\C(=C\C=2C=CC(=CC=2)N=[N+]=[N-])CC(C)CC1=CC1=CC=C(N=[N+]=[N-])C=C1 MLIWQXBKMZNZNF-KUHOPJCQSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 150000003863 ammonium salts Chemical class 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 230000001680 brushing effect Effects 0.000 description 2
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 235000019253 formic acid Nutrition 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 238000005459 micromachining Methods 0.000 description 2
- 235000005985 organic acids Nutrition 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- WLJVNTCWHIRURA-UHFFFAOYSA-N pimelic acid Chemical compound OC(=O)CCCCCC(O)=O WLJVNTCWHIRURA-UHFFFAOYSA-N 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 235000002906 tartaric acid Nutrition 0.000 description 2
- 239000011975 tartaric acid Substances 0.000 description 2
- -1 xanthine hydroxy acid Chemical class 0.000 description 2
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
- XMAONZDQIGJOQU-UHFFFAOYSA-N 2-butoxy-2-hydroxypentanoic acid Chemical compound C(CCC)OC(C(=O)O)(CCC)O XMAONZDQIGJOQU-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241000251730 Chondrichthyes Species 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- LEVWYRKDKASIDU-IMJSIDKUSA-N L-cystine Chemical compound [O-]C(=O)[C@@H]([NH3+])CSSC[C@H]([NH3+])C([O-])=O LEVWYRKDKASIDU-IMJSIDKUSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- LRFVTYWOQMYALW-UHFFFAOYSA-N Xanthine Natural products O=C1NC(=O)NC2=C1NC=N2 LRFVTYWOQMYALW-UHFFFAOYSA-N 0.000 description 1
- 125000000218 acetic acid group Chemical group C(C)(=O)* 0.000 description 1
- WRVRNZNDLRUXSW-UHFFFAOYSA-N acetic acid;prop-2-enoic acid Chemical compound CC(O)=O.OC(=O)C=C WRVRNZNDLRUXSW-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid group Chemical group C(C1=CC=CC=C1)(=O)O WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229960003067 cystine Drugs 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- LVTYICIALWPMFW-UHFFFAOYSA-N diisopropanolamine Chemical class CC(O)CNCC(C)O LVTYICIALWPMFW-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 150000002169 ethanolamines Chemical class 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 235000013373 food additive Nutrition 0.000 description 1
- 239000002778 food additive Substances 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 150000001261 hydroxy acids Chemical class 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 235000015170 shellfish Nutrition 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005063 solubilization Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 230000003442 weekly effect Effects 0.000 description 1
- 229940075420 xanthine Drugs 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10488299A JP3941284B2 (ja) | 1999-04-13 | 1999-04-13 | 研磨方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW478055B true TW478055B (en) | 2002-03-01 |
Family
ID=14392567
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW089106538A TW478055B (en) | 1999-04-13 | 2000-04-08 | Method for polishing |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6561883B1 (enExample) |
| JP (1) | JP3941284B2 (enExample) |
| KR (1) | KR100514536B1 (enExample) |
| TW (1) | TW478055B (enExample) |
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| AU5445899A (en) | 1998-08-31 | 2000-03-21 | Hitachi Chemical Company, Ltd. | Abrasive liquid for metal and method for polishing |
| JP3941284B2 (ja) * | 1999-04-13 | 2007-07-04 | 株式会社日立製作所 | 研磨方法 |
| US6551935B1 (en) * | 2000-08-31 | 2003-04-22 | Micron Technology, Inc. | Slurry for use in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods |
| JP2004526308A (ja) * | 2001-01-16 | 2004-08-26 | キャボット マイクロエレクトロニクス コーポレイション | シュウ酸アンモニウムを含有する研磨系及び方法 |
| US6632259B2 (en) * | 2001-05-18 | 2003-10-14 | Rodel Holdings, Inc. | Chemical mechanical polishing compositions and methods relating thereto |
| US7008554B2 (en) * | 2001-07-13 | 2006-03-07 | Applied Materials, Inc. | Dual reduced agents for barrier removal in chemical mechanical polishing |
| TW591089B (en) * | 2001-08-09 | 2004-06-11 | Cheil Ind Inc | Slurry composition for use in chemical mechanical polishing of metal wiring |
| TW503522B (en) * | 2001-09-04 | 2002-09-21 | Nanya Plastics Corp | Method for preventing short circuit between metal conduction wires |
| US6821897B2 (en) * | 2001-12-05 | 2004-11-23 | Cabot Microelectronics Corporation | Method for copper CMP using polymeric complexing agents |
| US20030119692A1 (en) * | 2001-12-07 | 2003-06-26 | So Joseph K. | Copper polishing cleaning solution |
| KR100919553B1 (ko) * | 2002-10-25 | 2009-10-01 | 주식회사 하이닉스반도체 | 연마제를 포함하지 않는 금속용 ｃｍｐ 용액 |
| US20040092102A1 (en) * | 2002-11-12 | 2004-05-13 | Sachem, Inc. | Chemical mechanical polishing composition and method |
| US6866560B1 (en) * | 2003-01-09 | 2005-03-15 | Sandia Corporation | Method for thinning specimen |
| US20040175918A1 (en) * | 2003-03-05 | 2004-09-09 | Taiwan Semiconductor Manufacturing Company | Novel formation of an aluminum contact pad free of plasma induced damage by applying CMP |
| US7736405B2 (en) * | 2003-05-12 | 2010-06-15 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for copper and associated materials and method of using same |
| US20040266185A1 (en) * | 2003-06-30 | 2004-12-30 | Texas Instruments Incorporated | Method for reducing integrated circuit defects |
| US7186653B2 (en) * | 2003-07-30 | 2007-03-06 | Climax Engineered Materials, Llc | Polishing slurries and methods for chemical mechanical polishing |
| US20050022456A1 (en) * | 2003-07-30 | 2005-02-03 | Babu S. V. | Polishing slurry and method for chemical-mechanical polishing of copper |
| KR100672940B1 (ko) * | 2004-08-03 | 2007-01-24 | 삼성전자주식회사 | 금속막을 위한 화학적기계적 연마 슬러리 및 이를 이용한금속막의 화학적기계적 연마 방법 |
| US20060163206A1 (en) * | 2005-01-25 | 2006-07-27 | Irina Belov | Novel polishing slurries and abrasive-free solutions having a multifunctional activator |
| US20060223320A1 (en) * | 2005-03-30 | 2006-10-05 | Cooper Kevin E | Polishing technique to minimize abrasive removal of material and composition therefor |
| US7311856B2 (en) * | 2005-03-30 | 2007-12-25 | Cabot Microelectronics Corporation | Polymeric inhibitors for enhanced planarization |
| JP4776269B2 (ja) * | 2005-04-28 | 2011-09-21 | 株式会社東芝 | 金属膜ｃｍｐ用スラリー、および半導体装置の製造方法 |
| EP1879223A4 (en) * | 2005-05-06 | 2009-07-22 | Asahi Glass Co Ltd | COMPOSITION FOR POLISHING A COPPER WIRING AND METHOD FOR POLISHING THE SURFACE OF AN INTEGRATED SEMICONDUCTOR CIRCUIT |
| EP1929512A2 (en) * | 2005-08-05 | 2008-06-11 | Advanced Technology Materials, Inc. | High throughput chemical mechanical polishing composition for metal film planarization |
| US20070117497A1 (en) * | 2005-11-22 | 2007-05-24 | Cabot Microelectronics Corporation | Friction reducing aid for CMP |
| JPWO2007116770A1 (ja) * | 2006-04-03 | 2009-08-20 | Jsr株式会社 | 化学機械研磨用水系分散体および化学機械研磨方法、ならびに化学機械研磨用水系分散体を調製するためのキット |
| US20100087065A1 (en) * | 2007-01-31 | 2010-04-08 | Advanced Technology Materials, Inc. | Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications |
| US7988794B2 (en) * | 2007-02-07 | 2011-08-02 | Infineon Technologies Ag | Semiconductor device and method |
| US7805976B2 (en) * | 2007-04-02 | 2010-10-05 | United Technologies Corporation | Method for checking surface condition after cleaning |
| US20090215266A1 (en) * | 2008-02-22 | 2009-08-27 | Thomas Terence M | Polishing Copper-Containing patterned wafers |
| WO2010032616A1 (ja) * | 2008-09-19 | 2010-03-25 | 三菱瓦斯化学株式会社 | 銅配線表面保護液および半導体回路の製造方法 |
| KR101084676B1 (ko) * | 2008-12-03 | 2011-11-22 | 주식회사 엘지화학 | 1차 화학적 기계적 연마용 슬러리 조성물 및 화학적 기계적 연마 방법 |
| JP6779701B2 (ja) * | 2016-08-05 | 2020-11-04 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び基板処理方法を実行させるプログラムが記録された記憶媒体 |
| JP7220532B2 (ja) * | 2018-07-31 | 2023-02-10 | ニッタ・デュポン株式会社 | 研磨用スラリー |
| CN109877656B (zh) * | 2019-03-22 | 2024-03-22 | 湖南科技大学 | 一种电化学增稠抛光装置 |
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| ZA772965B (en) * | 1976-05-19 | 1978-06-28 | Dow Chemical Co | Ore grinding process |
| NL8701407A (nl) * | 1987-06-17 | 1989-01-16 | Vunderink Ate | Een oppervlakte techniek die het massaal slijpen en polijsten van metalen artikelen in rotofinish apparatuur sneller doet verlopen. |
| US4954142A (en) | 1989-03-07 | 1990-09-04 | International Business Machines Corporation | Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor |
| JPH08302338A (ja) * | 1995-05-15 | 1996-11-19 | Sony Corp | スラリーおよびこれを用いた半導体装置の製造方法 |
| US5860848A (en) * | 1995-06-01 | 1999-01-19 | Rodel, Inc. | Polishing silicon wafers with improved polishing slurries |
| US6126528A (en) * | 1995-09-18 | 2000-10-03 | 3M Innovative Properties Company | Preformed ophthalmic lens base block with textured surface |
| KR100197535B1 (ko) * | 1996-06-27 | 1999-06-15 | 김영환 | 반도체 소자의 금속 배선 형성방법 |
| JPH1022241A (ja) * | 1996-07-08 | 1998-01-23 | Tokyo Fine Chem Kk | シリコンウェハ用ラップ液およびラップ剤 |
| US5664990A (en) * | 1996-07-29 | 1997-09-09 | Integrated Process Equipment Corp. | Slurry recycling in CMP apparatus |
| US5773364A (en) * | 1996-10-21 | 1998-06-30 | Motorola, Inc. | Method for using ammonium salt slurries for chemical mechanical polishing (CMP) |
| JPH10204417A (ja) * | 1997-01-27 | 1998-08-04 | Kao Corp | 加工用助剤組成物、研磨材組成物、表面加工方法及び基板の製造方法 |
| US6022400A (en) * | 1997-05-22 | 2000-02-08 | Nippon Steel Corporation | Polishing abrasive grains, polishing agent and polishing method |
| US6121143A (en) * | 1997-09-19 | 2000-09-19 | 3M Innovative Properties Company | Abrasive articles comprising a fluorochemical agent for wafer surface modification |
| US6190237B1 (en) * | 1997-11-06 | 2001-02-20 | International Business Machines Corporation | pH-buffered slurry and use thereof for polishing |
| US6019667A (en) * | 1998-05-26 | 2000-02-01 | Dow Corning Corporation | Method for grinding silicon metalloid |
| US6217416B1 (en) * | 1998-06-26 | 2001-04-17 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper/tantalum substrates |
| TW455626B (en) * | 1998-07-23 | 2001-09-21 | Eternal Chemical Co Ltd | Chemical mechanical abrasive composition for use in semiconductor processing |
| US6206756B1 (en) * | 1998-11-10 | 2001-03-27 | Micron Technology, Inc. | Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad |
| JP3941284B2 (ja) * | 1999-04-13 | 2007-07-04 | 株式会社日立製作所 | 研磨方法 |
-
1999
- 1999-04-13 JP JP10488299A patent/JP3941284B2/ja not_active Expired - Fee Related
-
2000
- 2000-04-06 KR KR10-2000-0017824A patent/KR100514536B1/ko not_active Expired - Fee Related
- 2000-04-08 TW TW089106538A patent/TW478055B/zh not_active IP Right Cessation
- 2000-04-12 US US09/548,289 patent/US6561883B1/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR20010014689A (ko) | 2001-02-26 |
| JP2000290638A (ja) | 2000-10-17 |
| JP3941284B2 (ja) | 2007-07-04 |
| US6561883B1 (en) | 2003-05-13 |
| KR100514536B1 (ko) | 2005-09-13 |
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