JP3941284B2 - 研磨方法 - Google Patents

研磨方法 Download PDF

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Publication number
JP3941284B2
JP3941284B2 JP10488299A JP10488299A JP3941284B2 JP 3941284 B2 JP3941284 B2 JP 3941284B2 JP 10488299 A JP10488299 A JP 10488299A JP 10488299 A JP10488299 A JP 10488299A JP 3941284 B2 JP3941284 B2 JP 3941284B2
Authority
JP
Japan
Prior art keywords
polishing
manufacturing
semiconductor device
acid
metal film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP10488299A
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English (en)
Japanese (ja)
Other versions
JP2000290638A (ja
JP2000290638A5 (enExample
Inventor
誠一 近藤
憲之 佐久間
喜夫 本間
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10488299A priority Critical patent/JP3941284B2/ja
Priority to KR10-2000-0017824A priority patent/KR100514536B1/ko
Priority to TW089106538A priority patent/TW478055B/zh
Priority to US09/548,289 priority patent/US6561883B1/en
Publication of JP2000290638A publication Critical patent/JP2000290638A/ja
Publication of JP2000290638A5 publication Critical patent/JP2000290638A5/ja
Application granted granted Critical
Publication of JP3941284B2 publication Critical patent/JP3941284B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP10488299A 1999-04-13 1999-04-13 研磨方法 Expired - Fee Related JP3941284B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP10488299A JP3941284B2 (ja) 1999-04-13 1999-04-13 研磨方法
KR10-2000-0017824A KR100514536B1 (ko) 1999-04-13 2000-04-06 연마방법
TW089106538A TW478055B (en) 1999-04-13 2000-04-08 Method for polishing
US09/548,289 US6561883B1 (en) 1999-04-13 2000-04-12 Method of polishing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10488299A JP3941284B2 (ja) 1999-04-13 1999-04-13 研磨方法

Publications (3)

Publication Number Publication Date
JP2000290638A JP2000290638A (ja) 2000-10-17
JP2000290638A5 JP2000290638A5 (enExample) 2004-09-16
JP3941284B2 true JP3941284B2 (ja) 2007-07-04

Family

ID=14392567

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10488299A Expired - Fee Related JP3941284B2 (ja) 1999-04-13 1999-04-13 研磨方法

Country Status (4)

Country Link
US (1) US6561883B1 (enExample)
JP (1) JP3941284B2 (enExample)
KR (1) KR100514536B1 (enExample)
TW (1) TW478055B (enExample)

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AU5445899A (en) 1998-08-31 2000-03-21 Hitachi Chemical Company, Ltd. Abrasive liquid for metal and method for polishing
JP3941284B2 (ja) * 1999-04-13 2007-07-04 株式会社日立製作所 研磨方法
US6551935B1 (en) * 2000-08-31 2003-04-22 Micron Technology, Inc. Slurry for use in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods
JP2004526308A (ja) * 2001-01-16 2004-08-26 キャボット マイクロエレクトロニクス コーポレイション シュウ酸アンモニウムを含有する研磨系及び方法
US6632259B2 (en) * 2001-05-18 2003-10-14 Rodel Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
US7008554B2 (en) * 2001-07-13 2006-03-07 Applied Materials, Inc. Dual reduced agents for barrier removal in chemical mechanical polishing
TW591089B (en) * 2001-08-09 2004-06-11 Cheil Ind Inc Slurry composition for use in chemical mechanical polishing of metal wiring
TW503522B (en) * 2001-09-04 2002-09-21 Nanya Plastics Corp Method for preventing short circuit between metal conduction wires
US6821897B2 (en) * 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
US20030119692A1 (en) * 2001-12-07 2003-06-26 So Joseph K. Copper polishing cleaning solution
KR100919553B1 (ko) * 2002-10-25 2009-10-01 주식회사 하이닉스반도체 연마제를 포함하지 않는 금속용 ｃｍｐ 용액
US20040092102A1 (en) * 2002-11-12 2004-05-13 Sachem, Inc. Chemical mechanical polishing composition and method
US6866560B1 (en) * 2003-01-09 2005-03-15 Sandia Corporation Method for thinning specimen
US20040175918A1 (en) * 2003-03-05 2004-09-09 Taiwan Semiconductor Manufacturing Company Novel formation of an aluminum contact pad free of plasma induced damage by applying CMP
US7736405B2 (en) * 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
US20040266185A1 (en) * 2003-06-30 2004-12-30 Texas Instruments Incorporated Method for reducing integrated circuit defects
US7186653B2 (en) * 2003-07-30 2007-03-06 Climax Engineered Materials, Llc Polishing slurries and methods for chemical mechanical polishing
US20050022456A1 (en) * 2003-07-30 2005-02-03 Babu S. V. Polishing slurry and method for chemical-mechanical polishing of copper
KR100672940B1 (ko) * 2004-08-03 2007-01-24 삼성전자주식회사 금속막을 위한 화학적기계적 연마 슬러리 및 이를 이용한금속막의 화학적기계적 연마 방법
US20060163206A1 (en) * 2005-01-25 2006-07-27 Irina Belov Novel polishing slurries and abrasive-free solutions having a multifunctional activator
US20060223320A1 (en) * 2005-03-30 2006-10-05 Cooper Kevin E Polishing technique to minimize abrasive removal of material and composition therefor
US7311856B2 (en) * 2005-03-30 2007-12-25 Cabot Microelectronics Corporation Polymeric inhibitors for enhanced planarization
JP4776269B2 (ja) * 2005-04-28 2011-09-21 株式会社東芝 金属膜ｃｍｐ用スラリー、および半導体装置の製造方法
EP1879223A4 (en) * 2005-05-06 2009-07-22 Asahi Glass Co Ltd COMPOSITION FOR POLISHING A COPPER WIRING AND METHOD FOR POLISHING THE SURFACE OF AN INTEGRATED SEMICONDUCTOR CIRCUIT
EP1929512A2 (en) * 2005-08-05 2008-06-11 Advanced Technology Materials, Inc. High throughput chemical mechanical polishing composition for metal film planarization
US20070117497A1 (en) * 2005-11-22 2007-05-24 Cabot Microelectronics Corporation Friction reducing aid for CMP
JPWO2007116770A1 (ja) * 2006-04-03 2009-08-20 Jsr株式会社 化学機械研磨用水系分散体および化学機械研磨方法、ならびに化学機械研磨用水系分散体を調製するためのキット
US20100087065A1 (en) * 2007-01-31 2010-04-08 Advanced Technology Materials, Inc. Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications
US7988794B2 (en) * 2007-02-07 2011-08-02 Infineon Technologies Ag Semiconductor device and method
US7805976B2 (en) * 2007-04-02 2010-10-05 United Technologies Corporation Method for checking surface condition after cleaning
US20090215266A1 (en) * 2008-02-22 2009-08-27 Thomas Terence M Polishing Copper-Containing patterned wafers
WO2010032616A1 (ja) * 2008-09-19 2010-03-25 三菱瓦斯化学株式会社 銅配線表面保護液および半導体回路の製造方法
KR101084676B1 (ko) * 2008-12-03 2011-11-22 주식회사 엘지화학 1차 화학적 기계적 연마용 슬러리 조성물 및 화학적 기계적 연마 방법
JP6779701B2 (ja) * 2016-08-05 2020-11-04 東京エレクトロン株式会社 基板処理装置、基板処理方法及び基板処理方法を実行させるプログラムが記録された記憶媒体
JP7220532B2 (ja) * 2018-07-31 2023-02-10 ニッタ・デュポン株式会社 研磨用スラリー
CN109877656B (zh) * 2019-03-22 2024-03-22 湖南科技大学 一种电化学增稠抛光装置

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NL8701407A (nl) * 1987-06-17 1989-01-16 Vunderink Ate Een oppervlakte techniek die het massaal slijpen en polijsten van metalen artikelen in rotofinish apparatuur sneller doet verlopen.
US4954142A (en) 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
JPH08302338A (ja) * 1995-05-15 1996-11-19 Sony Corp スラリーおよびこれを用いた半導体装置の製造方法
US5860848A (en) * 1995-06-01 1999-01-19 Rodel, Inc. Polishing silicon wafers with improved polishing slurries
US6126528A (en) * 1995-09-18 2000-10-03 3M Innovative Properties Company Preformed ophthalmic lens base block with textured surface
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JPH10204417A (ja) * 1997-01-27 1998-08-04 Kao Corp 加工用助剤組成物、研磨材組成物、表面加工方法及び基板の製造方法
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JP3941284B2 (ja) * 1999-04-13 2007-07-04 株式会社日立製作所 研磨方法

Also Published As

Publication number Publication date
KR20010014689A (ko) 2001-02-26
JP2000290638A (ja) 2000-10-17
TW478055B (en) 2002-03-01
US6561883B1 (en) 2003-05-13
KR100514536B1 (ko) 2005-09-13

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