JP3941284B2 - 研磨方法 - Google Patents

研磨方法 Download PDF

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Publication number
JP3941284B2
JP3941284B2 JP10488299A JP10488299A JP3941284B2 JP 3941284 B2 JP3941284 B2 JP 3941284B2 JP 10488299 A JP10488299 A JP 10488299A JP 10488299 A JP10488299 A JP 10488299A JP 3941284 B2 JP3941284 B2 JP 3941284B2
Authority
JP
Japan
Prior art keywords
polishing
manufacturing
semiconductor device
acid
metal film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP10488299A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000290638A (ja
JP2000290638A5 (enExample
Inventor
誠一 近藤
憲之 佐久間
喜夫 本間
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10488299A priority Critical patent/JP3941284B2/ja
Priority to KR10-2000-0017824A priority patent/KR100514536B1/ko
Priority to TW089106538A priority patent/TW478055B/zh
Priority to US09/548,289 priority patent/US6561883B1/en
Publication of JP2000290638A publication Critical patent/JP2000290638A/ja
Publication of JP2000290638A5 publication Critical patent/JP2000290638A5/ja
Application granted granted Critical
Publication of JP3941284B2 publication Critical patent/JP3941284B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/277—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a planarisation of conductive layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP10488299A 1999-04-13 1999-04-13 研磨方法 Expired - Fee Related JP3941284B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP10488299A JP3941284B2 (ja) 1999-04-13 1999-04-13 研磨方法
KR10-2000-0017824A KR100514536B1 (ko) 1999-04-13 2000-04-06 연마방법
TW089106538A TW478055B (en) 1999-04-13 2000-04-08 Method for polishing
US09/548,289 US6561883B1 (en) 1999-04-13 2000-04-12 Method of polishing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10488299A JP3941284B2 (ja) 1999-04-13 1999-04-13 研磨方法

Publications (3)

Publication Number Publication Date
JP2000290638A JP2000290638A (ja) 2000-10-17
JP2000290638A5 JP2000290638A5 (enExample) 2004-09-16
JP3941284B2 true JP3941284B2 (ja) 2007-07-04

Family

ID=14392567

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10488299A Expired - Fee Related JP3941284B2 (ja) 1999-04-13 1999-04-13 研磨方法

Country Status (4)

Country Link
US (1) US6561883B1 (enExample)
JP (1) JP3941284B2 (enExample)
KR (1) KR100514536B1 (enExample)
TW (1) TW478055B (enExample)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100381537C (zh) 1998-08-31 2008-04-16 日立化成工业株式会社 金属用研磨液及研磨方法
JP3941284B2 (ja) * 1999-04-13 2007-07-04 株式会社日立製作所 研磨方法
US6551935B1 (en) * 2000-08-31 2003-04-22 Micron Technology, Inc. Slurry for use in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods
WO2002061810A1 (en) * 2001-01-16 2002-08-08 Cabot Microelectronics Corporation Ammonium oxalate-containing polishing system and method
US6632259B2 (en) * 2001-05-18 2003-10-14 Rodel Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
US7008554B2 (en) * 2001-07-13 2006-03-07 Applied Materials, Inc. Dual reduced agents for barrier removal in chemical mechanical polishing
TW591089B (en) * 2001-08-09 2004-06-11 Cheil Ind Inc Slurry composition for use in chemical mechanical polishing of metal wiring
TW503522B (en) * 2001-09-04 2002-09-21 Nanya Plastics Corp Method for preventing short circuit between metal conduction wires
US6821897B2 (en) * 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
US20030119692A1 (en) * 2001-12-07 2003-06-26 So Joseph K. Copper polishing cleaning solution
KR100919553B1 (ko) * 2002-10-25 2009-10-01 주식회사 하이닉스반도체 연마제를 포함하지 않는 금속용 ｃｍｐ 용액
US20040092102A1 (en) * 2002-11-12 2004-05-13 Sachem, Inc. Chemical mechanical polishing composition and method
US6866560B1 (en) * 2003-01-09 2005-03-15 Sandia Corporation Method for thinning specimen
US20040175918A1 (en) * 2003-03-05 2004-09-09 Taiwan Semiconductor Manufacturing Company Novel formation of an aluminum contact pad free of plasma induced damage by applying CMP
US7736405B2 (en) * 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
US20040266185A1 (en) * 2003-06-30 2004-12-30 Texas Instruments Incorporated Method for reducing integrated circuit defects
US20050022456A1 (en) * 2003-07-30 2005-02-03 Babu S. V. Polishing slurry and method for chemical-mechanical polishing of copper
US7186653B2 (en) * 2003-07-30 2007-03-06 Climax Engineered Materials, Llc Polishing slurries and methods for chemical mechanical polishing
KR100672940B1 (ko) * 2004-08-03 2007-01-24 삼성전자주식회사 금속막을 위한 화학적기계적 연마 슬러리 및 이를 이용한금속막의 화학적기계적 연마 방법
US20060163206A1 (en) * 2005-01-25 2006-07-27 Irina Belov Novel polishing slurries and abrasive-free solutions having a multifunctional activator
US7311856B2 (en) * 2005-03-30 2007-12-25 Cabot Microelectronics Corporation Polymeric inhibitors for enhanced planarization
US20060223320A1 (en) * 2005-03-30 2006-10-05 Cooper Kevin E Polishing technique to minimize abrasive removal of material and composition therefor
JP4776269B2 (ja) * 2005-04-28 2011-09-21 株式会社東芝 金属膜ｃｍｐ用スラリー、および半導体装置の製造方法
WO2006120727A1 (ja) * 2005-05-06 2006-11-16 Asahi Glass Company, Limited 銅配線研磨用組成物および半導体集積回路表面の研磨方法
TW200714696A (en) * 2005-08-05 2007-04-16 Advanced Tech Materials High throughput chemical mechanical polishing composition for metal film planarization
US20070117497A1 (en) * 2005-11-22 2007-05-24 Cabot Microelectronics Corporation Friction reducing aid for CMP
JPWO2007116770A1 (ja) * 2006-04-03 2009-08-20 Jsr株式会社 化学機械研磨用水系分散体および化学機械研磨方法、ならびに化学機械研磨用水系分散体を調製するためのキット
CN101636465A (zh) * 2007-01-31 2010-01-27 高级技术材料公司 用于化学机械抛光浆料应用的聚合物-二氧化硅分散剂的稳定化
US7988794B2 (en) * 2007-02-07 2011-08-02 Infineon Technologies Ag Semiconductor device and method
US7805976B2 (en) * 2007-04-02 2010-10-05 United Technologies Corporation Method for checking surface condition after cleaning
US20090215266A1 (en) * 2008-02-22 2009-08-27 Thomas Terence M Polishing Copper-Containing patterned wafers
KR101588485B1 (ko) * 2008-09-19 2016-01-25 미츠비시 가스 가가쿠 가부시키가이샤 구리 배선 표면 보호액 및 반도체 회로의 제조 방법
KR101084676B1 (ko) * 2008-12-03 2011-11-22 주식회사 엘지화학 1차 화학적 기계적 연마용 슬러리 조성물 및 화학적 기계적 연마 방법
JP6779701B2 (ja) * 2016-08-05 2020-11-04 東京エレクトロン株式会社 基板処理装置、基板処理方法及び基板処理方法を実行させるプログラムが記録された記憶媒体
JP7220532B2 (ja) * 2018-07-31 2023-02-10 ニッタ・デュポン株式会社 研磨用スラリー
CN109877656B (zh) * 2019-03-22 2024-03-22 湖南科技大学 一种电化学增稠抛光装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ZA772965B (en) * 1976-05-19 1978-06-28 Dow Chemical Co Ore grinding process
NL8701407A (nl) * 1987-06-17 1989-01-16 Vunderink Ate Een oppervlakte techniek die het massaal slijpen en polijsten van metalen artikelen in rotofinish apparatuur sneller doet verlopen.
US4954142A (en) 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
JPH08302338A (ja) * 1995-05-15 1996-11-19 Sony Corp スラリーおよびこれを用いた半導体装置の製造方法
US5860848A (en) * 1995-06-01 1999-01-19 Rodel, Inc. Polishing silicon wafers with improved polishing slurries
US6126528A (en) * 1995-09-18 2000-10-03 3M Innovative Properties Company Preformed ophthalmic lens base block with textured surface
KR100197535B1 (ko) * 1996-06-27 1999-06-15 김영환 반도체 소자의 금속 배선 형성방법
JPH1022241A (ja) * 1996-07-08 1998-01-23 Tokyo Fine Chem Kk シリコンウェハ用ラップ液およびラップ剤
US5664990A (en) * 1996-07-29 1997-09-09 Integrated Process Equipment Corp. Slurry recycling in CMP apparatus
US5773364A (en) * 1996-10-21 1998-06-30 Motorola, Inc. Method for using ammonium salt slurries for chemical mechanical polishing (CMP)
JPH10204417A (ja) * 1997-01-27 1998-08-04 Kao Corp 加工用助剤組成物、研磨材組成物、表面加工方法及び基板の製造方法
US6022400A (en) * 1997-05-22 2000-02-08 Nippon Steel Corporation Polishing abrasive grains, polishing agent and polishing method
US6121143A (en) * 1997-09-19 2000-09-19 3M Innovative Properties Company Abrasive articles comprising a fluorochemical agent for wafer surface modification
US6190237B1 (en) * 1997-11-06 2001-02-20 International Business Machines Corporation pH-buffered slurry and use thereof for polishing
US6019667A (en) * 1998-05-26 2000-02-01 Dow Corning Corporation Method for grinding silicon metalloid
US6217416B1 (en) * 1998-06-26 2001-04-17 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrates
TW455626B (en) * 1998-07-23 2001-09-21 Eternal Chemical Co Ltd Chemical mechanical abrasive composition for use in semiconductor processing
US6206756B1 (en) * 1998-11-10 2001-03-27 Micron Technology, Inc. Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad
JP3941284B2 (ja) * 1999-04-13 2007-07-04 株式会社日立製作所 研磨方法

Also Published As

Publication number Publication date
KR100514536B1 (ko) 2005-09-13
US6561883B1 (en) 2003-05-13
JP2000290638A (ja) 2000-10-17
KR20010014689A (ko) 2001-02-26
TW478055B (en) 2002-03-01

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