KR100514536B1 - 연마방법 - Google Patents

연마방법 Download PDF

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Publication number
KR100514536B1
KR100514536B1 KR10-2000-0017824A KR20000017824A KR100514536B1 KR 100514536 B1 KR100514536 B1 KR 100514536B1 KR 20000017824 A KR20000017824 A KR 20000017824A KR 100514536 B1 KR100514536 B1 KR 100514536B1
Authority
KR
South Korea
Prior art keywords
polishing
metal film
film
acid
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2000-0017824A
Other languages
English (en)
Korean (ko)
Other versions
KR20010014689A (ko
Inventor
콘도세이이치
사쿠마노리유키
혼마요시오
Original Assignee
가부시키가이샤 히타치세이사쿠쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 히타치세이사쿠쇼 filed Critical 가부시키가이샤 히타치세이사쿠쇼
Publication of KR20010014689A publication Critical patent/KR20010014689A/ko
Application granted granted Critical
Publication of KR100514536B1 publication Critical patent/KR100514536B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR10-2000-0017824A 1999-04-13 2000-04-06 연마방법 Expired - Fee Related KR100514536B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1999-104882 1999-04-13
JP10488299A JP3941284B2 (ja) 1999-04-13 1999-04-13 研磨方法

Publications (2)

Publication Number Publication Date
KR20010014689A KR20010014689A (ko) 2001-02-26
KR100514536B1 true KR100514536B1 (ko) 2005-09-13

Family

ID=14392567

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2000-0017824A Expired - Fee Related KR100514536B1 (ko) 1999-04-13 2000-04-06 연마방법

Country Status (4)

Country Link
US (1) US6561883B1 (enExample)
JP (1) JP3941284B2 (enExample)
KR (1) KR100514536B1 (enExample)
TW (1) TW478055B (enExample)

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AU5445899A (en) 1998-08-31 2000-03-21 Hitachi Chemical Company, Ltd. Abrasive liquid for metal and method for polishing
JP3941284B2 (ja) * 1999-04-13 2007-07-04 株式会社日立製作所 研磨方法
US6551935B1 (en) * 2000-08-31 2003-04-22 Micron Technology, Inc. Slurry for use in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods
JP2004526308A (ja) * 2001-01-16 2004-08-26 キャボット マイクロエレクトロニクス コーポレイション シュウ酸アンモニウムを含有する研磨系及び方法
US6632259B2 (en) * 2001-05-18 2003-10-14 Rodel Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
US7008554B2 (en) * 2001-07-13 2006-03-07 Applied Materials, Inc. Dual reduced agents for barrier removal in chemical mechanical polishing
TW591089B (en) * 2001-08-09 2004-06-11 Cheil Ind Inc Slurry composition for use in chemical mechanical polishing of metal wiring
TW503522B (en) * 2001-09-04 2002-09-21 Nanya Plastics Corp Method for preventing short circuit between metal conduction wires
US6821897B2 (en) * 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
US20030119692A1 (en) * 2001-12-07 2003-06-26 So Joseph K. Copper polishing cleaning solution
KR100919553B1 (ko) * 2002-10-25 2009-10-01 주식회사 하이닉스반도체 연마제를 포함하지 않는 금속용 ｃｍｐ 용액
US20040092102A1 (en) * 2002-11-12 2004-05-13 Sachem, Inc. Chemical mechanical polishing composition and method
US6866560B1 (en) * 2003-01-09 2005-03-15 Sandia Corporation Method for thinning specimen
US20040175918A1 (en) * 2003-03-05 2004-09-09 Taiwan Semiconductor Manufacturing Company Novel formation of an aluminum contact pad free of plasma induced damage by applying CMP
US7736405B2 (en) * 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
US20040266185A1 (en) * 2003-06-30 2004-12-30 Texas Instruments Incorporated Method for reducing integrated circuit defects
US7186653B2 (en) * 2003-07-30 2007-03-06 Climax Engineered Materials, Llc Polishing slurries and methods for chemical mechanical polishing
US20050022456A1 (en) * 2003-07-30 2005-02-03 Babu S. V. Polishing slurry and method for chemical-mechanical polishing of copper
KR100672940B1 (ko) * 2004-08-03 2007-01-24 삼성전자주식회사 금속막을 위한 화학적기계적 연마 슬러리 및 이를 이용한금속막의 화학적기계적 연마 방법
US20060163206A1 (en) * 2005-01-25 2006-07-27 Irina Belov Novel polishing slurries and abrasive-free solutions having a multifunctional activator
US20060223320A1 (en) * 2005-03-30 2006-10-05 Cooper Kevin E Polishing technique to minimize abrasive removal of material and composition therefor
US7311856B2 (en) * 2005-03-30 2007-12-25 Cabot Microelectronics Corporation Polymeric inhibitors for enhanced planarization
JP4776269B2 (ja) * 2005-04-28 2011-09-21 株式会社東芝 金属膜ｃｍｐ用スラリー、および半導体装置の製造方法
EP1879223A4 (en) * 2005-05-06 2009-07-22 Asahi Glass Co Ltd COMPOSITION FOR POLISHING A COPPER WIRING AND METHOD FOR POLISHING THE SURFACE OF AN INTEGRATED SEMICONDUCTOR CIRCUIT
EP1929512A2 (en) * 2005-08-05 2008-06-11 Advanced Technology Materials, Inc. High throughput chemical mechanical polishing composition for metal film planarization
US20070117497A1 (en) * 2005-11-22 2007-05-24 Cabot Microelectronics Corporation Friction reducing aid for CMP
JPWO2007116770A1 (ja) * 2006-04-03 2009-08-20 Jsr株式会社 化学機械研磨用水系分散体および化学機械研磨方法、ならびに化学機械研磨用水系分散体を調製するためのキット
US20100087065A1 (en) * 2007-01-31 2010-04-08 Advanced Technology Materials, Inc. Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications
US7988794B2 (en) * 2007-02-07 2011-08-02 Infineon Technologies Ag Semiconductor device and method
US7805976B2 (en) * 2007-04-02 2010-10-05 United Technologies Corporation Method for checking surface condition after cleaning
US20090215266A1 (en) * 2008-02-22 2009-08-27 Thomas Terence M Polishing Copper-Containing patterned wafers
WO2010032616A1 (ja) * 2008-09-19 2010-03-25 三菱瓦斯化学株式会社 銅配線表面保護液および半導体回路の製造方法
KR101084676B1 (ko) * 2008-12-03 2011-11-22 주식회사 엘지화학 1차 화학적 기계적 연마용 슬러리 조성물 및 화학적 기계적 연마 방법
JP6779701B2 (ja) * 2016-08-05 2020-11-04 東京エレクトロン株式会社 基板処理装置、基板処理方法及び基板処理方法を実行させるプログラムが記録された記憶媒体
JP7220532B2 (ja) * 2018-07-31 2023-02-10 ニッタ・デュポン株式会社 研磨用スラリー
CN109877656B (zh) * 2019-03-22 2024-03-22 湖南科技大学 一种电化学增稠抛光装置

Citations (5)

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JPH08302338A (ja) * 1995-05-15 1996-11-19 Sony Corp スラリーおよびこれを用いた半導体装置の製造方法
JPH1022241A (ja) * 1996-07-08 1998-01-23 Tokyo Fine Chem Kk シリコンウェハ用ラップ液およびラップ剤
KR980005536A (ko) * 1996-06-27 1998-03-30 김주용 반도체 소자의 금속 배선 형성방법
JPH10204417A (ja) * 1997-01-27 1998-08-04 Kao Corp 加工用助剤組成物、研磨材組成物、表面加工方法及び基板の製造方法
JP2000290638A (ja) * 1999-04-13 2000-10-17 Hitachi Ltd 研磨方法

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ZA772965B (en) * 1976-05-19 1978-06-28 Dow Chemical Co Ore grinding process
NL8701407A (nl) * 1987-06-17 1989-01-16 Vunderink Ate Een oppervlakte techniek die het massaal slijpen en polijsten van metalen artikelen in rotofinish apparatuur sneller doet verlopen.
US4954142A (en) 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US5860848A (en) * 1995-06-01 1999-01-19 Rodel, Inc. Polishing silicon wafers with improved polishing slurries
US6126528A (en) * 1995-09-18 2000-10-03 3M Innovative Properties Company Preformed ophthalmic lens base block with textured surface
US5664990A (en) * 1996-07-29 1997-09-09 Integrated Process Equipment Corp. Slurry recycling in CMP apparatus
US5773364A (en) * 1996-10-21 1998-06-30 Motorola, Inc. Method for using ammonium salt slurries for chemical mechanical polishing (CMP)
US6022400A (en) * 1997-05-22 2000-02-08 Nippon Steel Corporation Polishing abrasive grains, polishing agent and polishing method
US6121143A (en) * 1997-09-19 2000-09-19 3M Innovative Properties Company Abrasive articles comprising a fluorochemical agent for wafer surface modification
US6190237B1 (en) * 1997-11-06 2001-02-20 International Business Machines Corporation pH-buffered slurry and use thereof for polishing
US6019667A (en) * 1998-05-26 2000-02-01 Dow Corning Corporation Method for grinding silicon metalloid
US6217416B1 (en) * 1998-06-26 2001-04-17 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrates
TW455626B (en) * 1998-07-23 2001-09-21 Eternal Chemical Co Ltd Chemical mechanical abrasive composition for use in semiconductor processing
US6206756B1 (en) * 1998-11-10 2001-03-27 Micron Technology, Inc. Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08302338A (ja) * 1995-05-15 1996-11-19 Sony Corp スラリーおよびこれを用いた半導体装置の製造方法
KR980005536A (ko) * 1996-06-27 1998-03-30 김주용 반도체 소자의 금속 배선 형성방법
JPH1022241A (ja) * 1996-07-08 1998-01-23 Tokyo Fine Chem Kk シリコンウェハ用ラップ液およびラップ剤
JPH10204417A (ja) * 1997-01-27 1998-08-04 Kao Corp 加工用助剤組成物、研磨材組成物、表面加工方法及び基板の製造方法
JP2000290638A (ja) * 1999-04-13 2000-10-17 Hitachi Ltd 研磨方法

Also Published As

Publication number Publication date
KR20010014689A (ko) 2001-02-26
JP2000290638A (ja) 2000-10-17
TW478055B (en) 2002-03-01
JP3941284B2 (ja) 2007-07-04
US6561883B1 (en) 2003-05-13

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