JP2000269366A5 - - Google Patents

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Publication number
JP2000269366A5
JP2000269366A5 JP1999076061A JP7606199A JP2000269366A5 JP 2000269366 A5 JP2000269366 A5 JP 2000269366A5 JP 1999076061 A JP1999076061 A JP 1999076061A JP 7606199 A JP7606199 A JP 7606199A JP 2000269366 A5 JP2000269366 A5 JP 2000269366A5
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JP
Japan
Prior art keywords
transistor
select gate
memory cells
nand cell
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1999076061A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000269366A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP7606199A priority Critical patent/JP2000269366A/ja
Priority claimed from JP7606199A external-priority patent/JP2000269366A/ja
Priority to US09/526,849 priority patent/US6243295B1/en
Publication of JP2000269366A publication Critical patent/JP2000269366A/ja
Publication of JP2000269366A5 publication Critical patent/JP2000269366A5/ja
Pending legal-status Critical Current

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JP7606199A 1999-03-19 1999-03-19 不揮発性半導体メモリ Pending JP2000269366A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP7606199A JP2000269366A (ja) 1999-03-19 1999-03-19 不揮発性半導体メモリ
US09/526,849 US6243295B1 (en) 1999-03-19 2000-03-16 Nonvolatile semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7606199A JP2000269366A (ja) 1999-03-19 1999-03-19 不揮発性半導体メモリ

Publications (2)

Publication Number Publication Date
JP2000269366A JP2000269366A (ja) 2000-09-29
JP2000269366A5 true JP2000269366A5 (enExample) 2005-07-07

Family

ID=13594266

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7606199A Pending JP2000269366A (ja) 1999-03-19 1999-03-19 不揮発性半導体メモリ

Country Status (2)

Country Link
US (1) US6243295B1 (enExample)
JP (1) JP2000269366A (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6901006B1 (en) * 1999-07-14 2005-05-31 Hitachi, Ltd. Semiconductor integrated circuit device including first, second and third gates
US20030030123A1 (en) * 2001-08-10 2003-02-13 Masayuki Ichige Semiconductor memory device equipped with memory transistor and peripheral transistor and method of manufacturing the same
JP2003346484A (ja) * 2002-05-23 2003-12-05 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP4005895B2 (ja) * 2002-09-30 2007-11-14 株式会社東芝 不揮発性半導体メモリ装置
JP2005056989A (ja) * 2003-08-01 2005-03-03 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
JP2005079165A (ja) * 2003-08-28 2005-03-24 Toshiba Corp 不揮発性半導体記憶装置とその製造方法、電子カードおよび電子装置
JP4398750B2 (ja) * 2004-02-17 2010-01-13 株式会社東芝 Ｎａｎｄ型フラッシュメモリ
US7170793B2 (en) * 2004-04-13 2007-01-30 Sandisk Corporation Programming inhibit for non-volatile memory
JP2006039966A (ja) * 2004-07-27 2006-02-09 Toshiba Corp メモリカードおよびメモリカードに搭載されるカード用コントローラ並びにメモリカードの処理装置
KR100583968B1 (ko) * 2004-08-03 2006-05-26 삼성전자주식회사 스페이스 트랜치들을 갖는 불 휘발성 메모리 장치들 및 그형성방법들
KR100680455B1 (ko) * 2005-06-30 2007-02-08 주식회사 하이닉스반도체 Ｎａｎｄ형 플래쉬 메모리 소자, 그 제조 방법 및 그 구동방법
KR100697294B1 (ko) * 2006-01-04 2007-03-20 삼성전자주식회사 트랜지스터 및 상기 트랜지스터가 구비된 비휘발성 기억장치
US7551467B2 (en) * 2006-08-04 2009-06-23 Micron Technology, Inc. Memory device architectures and operation
US7440326B2 (en) * 2006-09-06 2008-10-21 Sandisk Corporation Programming non-volatile memory with improved boosting
US7596031B2 (en) * 2006-10-30 2009-09-29 Sandisk Corporation Faster programming of highest multi-level state for non-volatile memory
KR100872720B1 (ko) * 2007-09-07 2008-12-05 주식회사 동부하이텍 플래시 메모리 및 그 제조방법
US7978520B2 (en) 2007-09-27 2011-07-12 Sandisk Corporation Compensation of non-volatile memory chip non-idealities by program pulse adjustment
JP2010205944A (ja) * 2009-03-04 2010-09-16 Toshiba Corp 不揮発性半導体記憶装置
US10038004B2 (en) 2009-06-22 2018-07-31 Cypress Semiconductor Corporation NAND memory cell string having a stacked select gate structure and process for for forming same
US20100322006A1 (en) * 2009-06-22 2010-12-23 Ming Sang Kwan Nand memory cell string having a stacked select gate structure and process for for forming same
US20120008419A1 (en) * 2010-07-09 2012-01-12 Ha Joo Yun Semiconductor memory device and method of operating the same
JP5017480B1 (ja) * 2011-05-02 2012-09-05 株式会社東芝 半導体記憶装置
US8526233B2 (en) 2011-05-23 2013-09-03 Sandisk Technologies Inc. Ramping pass voltage to enhance channel boost in memory device, with optional temperature compensation
US9076544B2 (en) * 2011-11-18 2015-07-07 Sandisk Technologies Inc. Operation for non-volatile storage system with shared bit lines
JP6071524B2 (ja) * 2012-12-19 2017-02-01 株式会社東芝 不揮発性半導体記憶装置
CN107124903A (zh) 2014-09-15 2017-09-01 Neo半导体公司 提供使用sram及非挥发性记忆体装置的多页读写方法及设备
JP2017111847A (ja) * 2015-12-17 2017-06-22 株式会社東芝 半導体記憶装置
WO2021261744A1 (ko) * 2020-06-23 2021-12-30 한양대학교 산학협력단 백 게이트를 포함하는 3차원 플래시 메모리

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5088060A (en) * 1989-03-08 1992-02-11 Kabushiki Kaisha Toshiba Electrically erasable programmable read-only memory with NAND memory cell structure
JP3354418B2 (ja) * 1997-01-20 2002-12-09 株式会社東芝 半導体記憶装置
JP3519583B2 (ja) 1997-09-19 2004-04-19 株式会社東芝 不揮発性半導体記憶装置およびその製造方法

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