JP2000269358A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法

Info

Publication number
JP2000269358A
JP2000269358A JP11071404A JP7140499A JP2000269358A JP 2000269358 A JP2000269358 A JP 2000269358A JP 11071404 A JP11071404 A JP 11071404A JP 7140499 A JP7140499 A JP 7140499A JP 2000269358 A JP2000269358 A JP 2000269358A
Authority
JP
Japan
Prior art keywords
semiconductor device
channel region
film
node
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP11071404A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000269358A5 (enExample
Inventor
Kazuo Nakazato
和郎 中里
Kiyoo Ito
清男 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11071404A priority Critical patent/JP2000269358A/ja
Priority to TW089102544A priority patent/TW466763B/zh
Priority to AU26925/00A priority patent/AU2692500A/en
Priority to PCT/JP2000/001094 priority patent/WO2000055906A1/ja
Priority to US09/516,773 priority patent/US6465834B1/en
Publication of JP2000269358A publication Critical patent/JP2000269358A/ja
Publication of JP2000269358A5 publication Critical patent/JP2000269358A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate

Landscapes

  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Dram (AREA)
JP11071404A 1999-03-17 1999-03-17 半導体装置およびその製造方法 Withdrawn JP2000269358A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP11071404A JP2000269358A (ja) 1999-03-17 1999-03-17 半導体装置およびその製造方法
TW089102544A TW466763B (en) 1999-03-17 2000-02-15 Semiconductor device and method of manufacture thereof
AU26925/00A AU2692500A (en) 1999-03-17 2000-02-25 Semiconductor device and method of manufacture thereof
PCT/JP2000/001094 WO2000055906A1 (fr) 1999-03-17 2000-02-25 Dispositif semi-conducteur et procede de fabrication correspondant
US09/516,773 US6465834B1 (en) 1999-03-17 2000-03-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11071404A JP2000269358A (ja) 1999-03-17 1999-03-17 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2000269358A true JP2000269358A (ja) 2000-09-29
JP2000269358A5 JP2000269358A5 (enExample) 2005-03-03

Family

ID=13459555

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11071404A Withdrawn JP2000269358A (ja) 1999-03-17 1999-03-17 半導体装置およびその製造方法

Country Status (5)

Country Link
US (1) US6465834B1 (enExample)
JP (1) JP2000269358A (enExample)
AU (1) AU2692500A (enExample)
TW (1) TW466763B (enExample)
WO (1) WO2000055906A1 (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002198499A (ja) * 2000-12-26 2002-07-12 Toshiba Corp 半導体記憶装置
JP2003017591A (ja) * 2001-07-03 2003-01-17 Hitachi Ltd 半導体記憶装置
JP2010157567A (ja) * 2008-12-26 2010-07-15 Funai Electric Advanced Applied Technology Research Institute Inc メモリセルアレイ
JP2011166128A (ja) * 2010-01-15 2011-08-25 Semiconductor Energy Lab Co Ltd 半導体装置
US8094484B2 (en) 2008-12-26 2012-01-10 Funai Electric Advanced Applied Technology Research Institute Inc. Memory cell array
JP2012039101A (ja) * 2010-07-16 2012-02-23 Semiconductor Energy Lab Co Ltd 半導体装置
US8174871B2 (en) 2008-12-26 2012-05-08 Funai Electric Advanced Applied Technology Research Institute Inc. Memory cell array

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW461096B (en) * 1999-05-13 2001-10-21 Hitachi Ltd Semiconductor memory
JP2002245777A (ja) 2001-02-20 2002-08-30 Hitachi Ltd 半導体装置
EP1668716A4 (en) * 2003-08-29 2008-05-14 Univ California ORGANIC VERTICAL FIELD EFFECT TRANSISTOR
JP4419699B2 (ja) * 2004-06-16 2010-02-24 ソニー株式会社 不揮発性半導体メモリ装置およびその動作方法
KR100536043B1 (ko) * 2004-06-25 2005-12-12 삼성전자주식회사 적층형 반도체 장치 및 그 제조 방법
KR100582421B1 (ko) * 2004-11-24 2006-05-22 에스티마이크로일렉트로닉스 엔.브이. 낸드 플래쉬 메모리소자의 제조방법
KR20060080446A (ko) * 2005-01-05 2006-07-10 삼성전자주식회사 수직형 유기 박막 트랜지스터 및 유기 발광 트랜지스터
CN103201831B (zh) * 2010-11-05 2015-08-05 株式会社半导体能源研究所 半导体装置
KR20140100307A (ko) * 2013-02-06 2014-08-14 삼성디스플레이 주식회사 유기 발광 트랜지스터
DE202017104154U1 (de) 2017-07-12 2017-11-03 Orange Hardware Company Cuttermesser

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4435785A (en) * 1981-06-02 1984-03-06 Texas Instruments Incorporated Unipolar voltage non-volatile JRAM cell
KR100198662B1 (ko) * 1996-05-16 1999-06-15 구본준 디램 셀, 디램 및 그의 제조 방법
JP4162280B2 (ja) * 1996-11-15 2008-10-08 株式会社日立製作所 メモリデバイスおよびメモリアレイ回路
JP2000113683A (ja) * 1998-10-02 2000-04-21 Hitachi Ltd 半導体装置

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002198499A (ja) * 2000-12-26 2002-07-12 Toshiba Corp 半導体記憶装置
JP2003017591A (ja) * 2001-07-03 2003-01-17 Hitachi Ltd 半導体記憶装置
JP2010157567A (ja) * 2008-12-26 2010-07-15 Funai Electric Advanced Applied Technology Research Institute Inc メモリセルアレイ
US8094484B2 (en) 2008-12-26 2012-01-10 Funai Electric Advanced Applied Technology Research Institute Inc. Memory cell array
US8174871B2 (en) 2008-12-26 2012-05-08 Funai Electric Advanced Applied Technology Research Institute Inc. Memory cell array
JP2011166128A (ja) * 2010-01-15 2011-08-25 Semiconductor Energy Lab Co Ltd 半導体装置
JP2012039101A (ja) * 2010-07-16 2012-02-23 Semiconductor Energy Lab Co Ltd 半導体装置
US8461586B2 (en) 2010-07-16 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8847326B2 (en) 2010-07-16 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Also Published As

Publication number Publication date
TW466763B (en) 2001-12-01
US6465834B1 (en) 2002-10-15
WO2000055906A1 (fr) 2000-09-21
AU2692500A (en) 2000-10-04

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