JP2000269354A - 交流用スイッチ素子及び交流回路 - Google Patents

交流用スイッチ素子及び交流回路

Info

Publication number
JP2000269354A
JP2000269354A JP11076353A JP7635399A JP2000269354A JP 2000269354 A JP2000269354 A JP 2000269354A JP 11076353 A JP11076353 A JP 11076353A JP 7635399 A JP7635399 A JP 7635399A JP 2000269354 A JP2000269354 A JP 2000269354A
Authority
JP
Japan
Prior art keywords
semiconductor region
region
type
semiconductor
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11076353A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000269354A5 (enExample
Inventor
Yumiko Araki
由美子 荒木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP11076353A priority Critical patent/JP2000269354A/ja
Publication of JP2000269354A publication Critical patent/JP2000269354A/ja
Publication of JP2000269354A5 publication Critical patent/JP2000269354A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H10D30/657—Lateral DMOS [LDMOS] FETs having substrates comprising insulating layers, e.g. SOI-LDMOS transistors

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
JP11076353A 1999-03-19 1999-03-19 交流用スイッチ素子及び交流回路 Pending JP2000269354A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11076353A JP2000269354A (ja) 1999-03-19 1999-03-19 交流用スイッチ素子及び交流回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11076353A JP2000269354A (ja) 1999-03-19 1999-03-19 交流用スイッチ素子及び交流回路

Publications (2)

Publication Number Publication Date
JP2000269354A true JP2000269354A (ja) 2000-09-29
JP2000269354A5 JP2000269354A5 (enExample) 2005-10-27

Family

ID=13603010

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11076353A Pending JP2000269354A (ja) 1999-03-19 1999-03-19 交流用スイッチ素子及び交流回路

Country Status (1)

Country Link
JP (1) JP2000269354A (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000269353A (ja) * 1999-03-19 2000-09-29 Toshiba Corp 交流用スイッチ素子及び交流スイッチ回路
JP2002176108A (ja) * 2000-12-06 2002-06-21 Ricoh Co Ltd 半導体装置及びリチウムイオン電池パック
WO2004114508A1 (ja) * 2003-06-23 2004-12-29 Sanken Electric Co., Ltd. 交流スイッチ
JP2006210865A (ja) * 2004-12-27 2006-08-10 Fuji Electric Device Technology Co Ltd 半導体装置
JP2010166793A (ja) * 2009-01-19 2010-07-29 Daikin Ind Ltd 双方向スイッチ及びスイッチング素子
JP2010166301A (ja) * 2009-01-15 2010-07-29 Daikin Ind Ltd スイッチ回路
JP2010187533A (ja) * 2009-01-19 2010-08-26 Daikin Ind Ltd 双方向スイッチ回路及びそれを備えた電力変換装置
JP2011205020A (ja) * 2010-03-26 2011-10-13 Sanken Electric Co Ltd 半導体装置
JP2017028213A (ja) * 2015-07-28 2017-02-02 新電元工業株式会社 半導体リレー素子及び半導体リレーモジュール
JP2020099039A (ja) * 2014-11-05 2020-06-25 ローム株式会社 双方向スイッチ

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000269353A (ja) * 1999-03-19 2000-09-29 Toshiba Corp 交流用スイッチ素子及び交流スイッチ回路
JP2002176108A (ja) * 2000-12-06 2002-06-21 Ricoh Co Ltd 半導体装置及びリチウムイオン電池パック
WO2004114508A1 (ja) * 2003-06-23 2004-12-29 Sanken Electric Co., Ltd. 交流スイッチ
JPWO2004114508A1 (ja) * 2003-06-23 2006-07-27 サンケン電気株式会社 交流スイッチ
JP2006210865A (ja) * 2004-12-27 2006-08-10 Fuji Electric Device Technology Co Ltd 半導体装置
JP2010166301A (ja) * 2009-01-15 2010-07-29 Daikin Ind Ltd スイッチ回路
JP2010166793A (ja) * 2009-01-19 2010-07-29 Daikin Ind Ltd 双方向スイッチ及びスイッチング素子
JP2010187533A (ja) * 2009-01-19 2010-08-26 Daikin Ind Ltd 双方向スイッチ回路及びそれを備えた電力変換装置
US9178412B2 (en) 2009-01-19 2015-11-03 Daikin Industries, Ltd. Bidirectional switch circuit configured to conduct current in reverse direction without applying an on-drive signal and power converter including the same
JP2011205020A (ja) * 2010-03-26 2011-10-13 Sanken Electric Co Ltd 半導体装置
JP2020099039A (ja) * 2014-11-05 2020-06-25 ローム株式会社 双方向スイッチ
JP2017028213A (ja) * 2015-07-28 2017-02-02 新電元工業株式会社 半導体リレー素子及び半導体リレーモジュール

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