JP2000269354A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2000269354A5 JP2000269354A5 JP1999076353A JP7635399A JP2000269354A5 JP 2000269354 A5 JP2000269354 A5 JP 2000269354A5 JP 1999076353 A JP1999076353 A JP 1999076353A JP 7635399 A JP7635399 A JP 7635399A JP 2000269354 A5 JP2000269354 A5 JP 2000269354A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor region
- region
- type
- semiconductor
- conductive type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11076353A JP2000269354A (ja) | 1999-03-19 | 1999-03-19 | 交流用スイッチ素子及び交流回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11076353A JP2000269354A (ja) | 1999-03-19 | 1999-03-19 | 交流用スイッチ素子及び交流回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000269354A JP2000269354A (ja) | 2000-09-29 |
| JP2000269354A5 true JP2000269354A5 (enExample) | 2005-10-27 |
Family
ID=13603010
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11076353A Pending JP2000269354A (ja) | 1999-03-19 | 1999-03-19 | 交流用スイッチ素子及び交流回路 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000269354A (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3857462B2 (ja) * | 1999-03-19 | 2006-12-13 | 株式会社東芝 | 交流スイッチ回路 |
| JP4115084B2 (ja) * | 2000-12-06 | 2008-07-09 | 株式会社リコー | 半導体装置及びリチウムイオン電池パック |
| WO2004114508A1 (ja) * | 2003-06-23 | 2004-12-29 | Sanken Electric Co., Ltd. | 交流スイッチ |
| JP5092202B2 (ja) * | 2004-12-27 | 2012-12-05 | 富士電機株式会社 | 半導体装置 |
| JP5407349B2 (ja) * | 2009-01-15 | 2014-02-05 | ダイキン工業株式会社 | スイッチ回路 |
| AU2010205351B2 (en) | 2009-01-19 | 2013-02-21 | Daikin Industries, Ltd. | Bidirectional switch circuit and power converter including the same |
| JP5600875B2 (ja) * | 2009-01-19 | 2014-10-08 | ダイキン工業株式会社 | 双方向スイッチ及びスイッチング素子 |
| JP5655339B2 (ja) * | 2010-03-26 | 2015-01-21 | サンケン電気株式会社 | 半導体装置 |
| JP6605491B2 (ja) * | 2014-11-05 | 2019-11-13 | ローム株式会社 | 双方向acスイッチ |
| JP2017028213A (ja) * | 2015-07-28 | 2017-02-02 | 新電元工業株式会社 | 半導体リレー素子及び半導体リレーモジュール |
-
1999
- 1999-03-19 JP JP11076353A patent/JP2000269354A/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1256985A3 (en) | Lateral power MISFET | |
| JP2002319675A5 (enExample) | ||
| WO2008057438A3 (en) | Power switching semiconductor devices including rectifying junction-shunts | |
| AU9006801A (en) | Semiconductor device and method of forming a semiconductor device | |
| WO2001059844A3 (en) | Semiconductor device with high reverse breakdown voltage and method of manufacturing the same | |
| WO2001071815A3 (en) | High voltage semiconductor device having a field plate arrangement | |
| KR970705834A (ko) | 전원 반도체 장치(Power semiconductor devices) | |
| EP1017113A4 (en) | NITRIDE SEMICONDUCTOR DEVICE | |
| WO2001059847A3 (en) | Insulated gate semiconductor device having field shaping regions | |
| WO2002043117A3 (en) | Trench gate fermi-threshold field effect transistors and methods of fabricating the same | |
| JP2000286387A5 (enExample) | ||
| JP2000269354A5 (enExample) | ||
| EP1309011A3 (en) | Semiconductor component and method of operation | |
| EP1143526A3 (en) | Field effect transistor and method of manufacturing the same | |
| DE50015580D1 (de) | Halbleitersicherung für elektrische verbraucher | |
| KR980006243A (ko) | 반도체 장치 및 그 제조방법 | |
| WO2004105086A3 (en) | Schotty-barrier tunneling transistor | |
| WO2005038881A3 (en) | Short-channel transistors | |
| TW348322B (en) | Power semiconductor device | |
| TW200419798A (en) | Bipolar transistor having a majority-carrier accumulation layer as subcollector | |
| TWI325636B (en) | Transistor with start-up control element | |
| KR900019259A (ko) | 쌍방향제어정류 반도체장치 | |
| EP0862221A4 (en) | Semiconductor device | |
| WO2000025364A3 (de) | Bipolares hochvolt-leistungsbauelement | |
| TW340259B (en) | Manufacturing method of semiconductor devices |