【特許請求の範囲】
【請求項１】 第１導電形の半導体基板上に形成された前記第１導電形と反対の第２導電形の第１半導体領域と、
前記第１半導体領域内に分離されて形成された前記第１導電形の第２、第３半導体領域と、
前記第２半導体領域内に形成された前記第２導電形の第４半導体領域と、
前記第３半導体領域内に形成された前記第２導電形の第５半導体領域と、
前記第２半導体領域と前記第３半導体領域との間の前記第１半導体領域内に形成された、前記第１半導体領域より高濃度の第６半導体領域と、
前記第４半導体領域と前記第６半導体領域との間の前記第２半導体領域上部に形成された第１チャネル領域と、
前記第５半導体領域と前記第６半導体領域との間の前記第３半導体領域上部に形成された第２チャネル領域と、
前記第１チャネル領域上に形成された第１制御電極と、
前記第２チャネル領域上に形成された第２制御電極と、
を具備することを特徴とする交流用スイッチ素子。
【請求項２】 第１導電形の半導体基板上に形成された前記第１導電形と反対の第２導電形の第１半導体領域と、
前記第１半導体領域内に分離されて形成された前記第１導電形の第２、第３半導体領域と、
前記第２半導体領域内に形成された前記第２導電形の第４半導体領域と、
前記第３半導体領域内に形成された前記第２導電形の第５半導体領域と、
前記第４半導体領域と前記第５半導体領域との間の前記第２半導体領域上部に形成された第１チャネル領域と、
前記第４半導体領域と前記第５半導体領域との間の前記第３半導体領域上部に形成された第２チャネル領域と、
前記第１チャネル領域上に形成された第１制御電極と、
前記第２チャネル領域上に形成された第２制御電極と、
を具備することを特徴とする交流用スイッチ素子。
【請求項３】 ｐ形半導体基板上に形成された第１のｎ形半導体領域と、
前記第１のｎ形半導体領域内に分離されて形成された第１、第２のｐ形半導体領域と、
前記第１のｐ形半導体領域内に形成された第２のｎ形半導体領域と、
前記第２のｐ形半導体領域内に形成された第３のｎ形半導体領域と、
前記第１のｐ形半導体領域と前記第２のｐ形半導体領域間の前記第１のｎ形半導体領域内に形成された、前記第１のｎ形半導体領域より高濃度の第４のｎ形半導体領域と、
前記第２のｎ形半導体領域と前記第４のｎ形半導体領域間の前記第１のｐ形半導体領域上部に形成された第１のチャネル領域と、
前記第３のｎ形半導体領域と前記第４のｎ形半導体領域間の前記第２のｐ形半導体領域上部に形成された第２のチャネル領域と、
前記第１のチャネル領域上に形成された第１の制御電極と、
前記第２のチャネル領域上に形成された第２の制御電極と、
を具備することを特徴とする交流用スイッチ素子。
【請求項４】 ｐ形半導体基板上に形成された第１のｎ形半導体領域と、
前記第１のｎ形半導体領域内に分離されて形成された第１、第２のｐ形半導体領域と、
前記第１のｐ形半導体領域内に形成された第２のｎ形半導体領域と、
前記第２のｐ形半導体領域内に形成された第３のｎ形半導体領域と、
前記第２のｎ形半導体領域と前記第３のｎ形半導体領域間の前記第１のｐ形半導体領域上部に形成された第１のチャネル領域と、
前記第２のｎ形半導体領域と前記第３のｎ形半導体領域間の前記第２のｐ形半導体領域上部に形成された第２のチャネル領域と、
前記第１のチャネル領域上に形成された第１の制御電極と、
前記第２のチャネル領域上に形成された第２の制御電極と、
を具備することを特徴とする交流用スイッチ素子。
【請求項５】 交流電源からの出力電流の流れを通過状態あるいは遮断状態にするスイッチ素子を有する交流回路において、
前記スイッチ素子は、第１導電形の半導体基板上に形成された前記第１導電形と反対の第２導電形の第１半導体領域と、
前記第１半導体領域内に分離されて形成された前記第１導電形の第２、第３半導体領域と、
前記第２半導体領域内に形成された前記第２導電形の第４半導体領域と、
前記第３半導体領域内に形成された前記第２導電形の第５半導体領域と、
前記第２半導体領域と前記第３半導体領域との間の前記第１半導体領域内に形成された、前記第１半導体領域より高濃度の第６半導体領域と、
前記第４半導体領域と前記第６半導体領域との間の前記第２半導体領域上部に形成された第１チャネル領域と、
前記第５半導体領域と前記第６半導体領域との間の前記第３半導体領域上部に形成された第２チャネル領域と、
前記第１チャネル領域上に形成された第１制御電極と、
前記第２チャネル領域上に形成された第２制御電極と、
を具備することを特徴とする交流回路。
【請求項６】 交流電源からの出力電流の流れを通過状態あるいは遮断状態にするスイッチ素子を有する交流回路において、
前記スイッチ素子は、第１導電形の半導体基板上に形成された前記第１導電形と反対の第２導電形の第１半導体領域と、
前記第１半導体領域内に分離されて形成された前記第１導電形の第２、第３半導体領域と、
前記第２半導体領域内に形成された前記第２導電形の第４半導体領域と、
前記第３半導体領域内に形成された前記第２導電形の第５半導体領域と、
前記第４半導体領域と前記第５半導体領域との間の前記第２半導体領域上部に形成された第１チャネル領域と、
前記第４半導体領域と前記第５半導体領域との間の前記第３半導体領域上部に形成された第２チャネル領域と、
前記第１チャネル領域上に形成された第１制御電極と、
前記第２チャネル領域上に形成された第２制御電極と、
を具備することを特徴とする交流回路。
[Claims]
1. A second conductive type first semiconductor region opposite to the first conductive type formed on a first conductive type semiconductor substrate.
The second and third semiconductor regions of the first conductive type, which are separated and formed in the first semiconductor region,
The second conductive type fourth semiconductor region formed in the second semiconductor region and
The second conductive type fifth semiconductor region formed in the third semiconductor region and
A sixth semiconductor region having a higher concentration than the first semiconductor region, formed in the first semiconductor region between the second semiconductor region and the third semiconductor region,
A first channel region formed on the upper portion of the second semiconductor region between the fourth semiconductor region and the sixth semiconductor region,
A second channel region formed on the upper portion of the third semiconductor region between the fifth semiconductor region and the sixth semiconductor region,
The first control electrode formed on the first channel region and
The second control electrode formed on the second channel region and
A switch element for alternating current, which is characterized by being provided with.
2. A second conductive type first semiconductor region opposite to the first conductive type formed on a first conductive type semiconductor substrate.
The second and third semiconductor regions of the first conductive type, which are separated and formed in the first semiconductor region,
The second conductive type fourth semiconductor region formed in the second semiconductor region and
The second conductive type fifth semiconductor region formed in the third semiconductor region and
A first channel region formed on the upper portion of the second semiconductor region between the fourth semiconductor region and the fifth semiconductor region,
A second channel region formed on the upper portion of the third semiconductor region between the fourth semiconductor region and the fifth semiconductor region,
The first control electrode formed on the first channel region and
The second control electrode formed on the second channel region and
A switch element for alternating current, which is characterized by being provided with.
3. A first n-type semiconductor region formed on a p-type semiconductor substrate, and a first n-type semiconductor region.
The first and second p-type semiconductor regions separated and formed in the first n-type semiconductor region, and
A second n-type semiconductor region formed in the first p-type semiconductor region and
A third n-type semiconductor region formed in the second p-type semiconductor region,
A fourth n-type having a higher concentration than the first n-type semiconductor region formed in the first n-type semiconductor region between the first p-type semiconductor region and the second p-type semiconductor region. In the semiconductor area,
A first channel region formed above the first p-type semiconductor region between the second n-type semiconductor region and the fourth n-type semiconductor region,
A second channel region formed above the second p-type semiconductor region between the third n-type semiconductor region and the fourth n-type semiconductor region, and
With the first control electrode formed on the first channel region,
With the second control electrode formed on the second channel region,
A switch element for alternating current, which is characterized by being provided with.
4. A first n-type semiconductor region formed on a p-type semiconductor substrate, and a first n-type semiconductor region.
The first and second p-type semiconductor regions separated and formed in the first n-type semiconductor region, and
A second n-type semiconductor region formed in the first p-type semiconductor region and
A third n-type semiconductor region formed in the second p-type semiconductor region,
A first channel region formed above the first p-type semiconductor region between the second n-type semiconductor region and the third n-type semiconductor region,
A second channel region formed above the second p-type semiconductor region between the second n-type semiconductor region and the third n-type semiconductor region, and
With the first control electrode formed on the first channel region,
With the second control electrode formed on the second channel region,
A switch element for alternating current, which is characterized by being provided with.
5. In an AC circuit having a switch element that makes the flow of output current from an AC power supply pass or cut off.
The switch element includes a second conductive type first semiconductor region formed on the first conductive type semiconductor substrate, which is opposite to the first conductive type.
The second and third semiconductor regions of the first conductive type, which are separated and formed in the first semiconductor region,
The second conductive type fourth semiconductor region formed in the second semiconductor region and
The second conductive type fifth semiconductor region formed in the third semiconductor region and
A sixth semiconductor region having a higher concentration than the first semiconductor region, formed in the first semiconductor region between the second semiconductor region and the third semiconductor region,
A first channel region formed on the upper portion of the second semiconductor region between the fourth semiconductor region and the sixth semiconductor region,
A second channel region formed on the upper portion of the third semiconductor region between the fifth semiconductor region and the sixth semiconductor region,
The first control electrode formed on the first channel region and
The second control electrode formed on the second channel region and
AC circuit characterized by..
6. In an AC circuit having a switch element that makes the flow of output current from an AC power supply pass or cut off.
The switch element includes a second conductive type first semiconductor region formed on the first conductive type semiconductor substrate, which is opposite to the first conductive type.
The second and third semiconductor regions of the first conductive type, which are separated and formed in the first semiconductor region,
The second conductive type fourth semiconductor region formed in the second semiconductor region and
The second conductive type fifth semiconductor region formed in the third semiconductor region and
A first channel region formed on the upper portion of the second semiconductor region between the fourth semiconductor region and the fifth semiconductor region,
A second channel region formed on the upper portion of the third semiconductor region between the fourth semiconductor region and the fifth semiconductor region,
The first control electrode formed on the first channel region and
The second control electrode formed on the second channel region and
AC circuit characterized by..