JP2017028213A - Semiconductor relay element and semiconductor relay module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor relay element and a semiconductor relay module, capable of providing secure driving with the miniaturization of an overall circuit.SOLUTION: In a semiconductor relay element 100 and a semiconductor relay module, a first semiconductor switch region Q110 and a second semiconductor switch region Q120 are formed mutually adjacently on an identical substrate. This enables carriers in the first semiconductor switch region Q110 and the second semiconductor switch region Q120 to mutually move inside the semiconductor element, and enables the reduction of a conduction loss in comparison with a case when a MOSFET of another chip is connected in series. Further, because the first semiconductor switch region Q110 and the second semiconductor switch region Q120 are formed mutually adjacently on the identical substrate, an ON threshold distribution of the first semiconductor switch region Q110 and the second semiconductor switch region Q120 at manufacturing comes to have close values, which enables stable drive.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a semiconductor relay element and a semiconductor relay module.

  A circuit that drives a motor with electric power supplied from a battery is usually configured by a battery unit, a relay unit, an inverter unit, and a motor unit. Conventionally, mechanical relay switches have been used for the relay section. However, mechanical relay switches are difficult not only for problems such as surge noise and contact deterioration due to chattering, but also for miniaturization and cost reduction. In recent years, there has been an increasing demand for replacing a mechanical relay switch with a semiconductor switch.

  When the relay unit is configured using a semiconductor switch, for example, there is a configuration as shown in FIG. In this circuit 2, two semiconductor switches Q510 and Q520 are connected to each other via source terminals S510 and S520, and a bias voltage whose gate potential is higher than the source potential is applied to the semiconductor switches Q510 and Q520. In addition, the drive circuits for the semiconductor switches Q510 and Q520 are configured to be electrically floating with respect to the battery unit.

  As a semiconductor relay used in such a configuration, for example, a semiconductor relay disclosed in FIG. 1 of Patent Document 1 can be used.

JP-A-5-191244

  However, in semiconductor relays for applications such as motors that flow large currents of several tens to several hundreds A, driving capability is insufficient only by optical signal driving, so that reliable driving becomes difficult. For this reason, in applications such as a motor that flows a large current of several tens to several hundreds of A, a drive circuit to which an insulating transformer and a buffer circuit are added is necessary, and there is a problem that the entire circuit is increased in size.

  The present invention has been made in view of the above problems, and can be reliably driven without using an insulating transformer or the like in a motor or the like that flows a large current of several tens to several hundreds of A. An object of the present invention is to provide a semiconductor relay element and a semiconductor relay module that can be miniaturized as a whole.

  The present invention proposes the following matters in order to solve the above problems.

  A first semiconductor switch region having a first gate electrode portion and a first source electrode portion; and a second semiconductor switch region having a second gate electrode portion and a second source electrode portion. The switch region and the second semiconductor switch region are formed adjacent to each other on the same substrate, and the first semiconductor switch region and the second semiconductor switch region have a common drain electrode portion formed on the same substrate. A semiconductor relay element is proposed.

  A semiconductor relay element is proposed in which the first gate electrode portion and the second gate electrode portion are electrically connected by a metal member.

  A semiconductor relay element is proposed in which the first gate electrode portion and the second gate electrode portion are electrically connected by wire bonding.

  The semiconductor relay element includes an input terminal and an output terminal, the first source terminal electrode portion is electrically connected to the input terminal, and the second source electrode portion is electrically connected to the output terminal. We have proposed a semiconductor relay module.

  Furthermore, the first voltage between the reference terminal, which is an electrical reference potential, and the input terminal and the reference terminal is boosted to be higher than the first voltage, and the gates of the first semiconductor switch region and the second semiconductor switch region A booster that generates a second voltage that is equal to or higher than a threshold voltage and applies the second voltage between the first gate electrode and the reference terminal, and between the second gate electrode and the reference terminal; A semiconductor relay module characterized by the above is proposed.

  According to the semiconductor relay element according to the present invention, carriers in the first semiconductor switch region and the second semiconductor switch region can move relative to each other inside the semiconductor element, and the conduction loss is reduced as compared with the case where MOSFETs of different chips are connected in series. Can be reduced.

  According to the semiconductor relay element of the present invention, the first semiconductor switch region and the second semiconductor switch region are formed adjacent to each other on the same substrate. The on-threshold distribution of the switch area becomes an approximate value, and stable driving is possible.

  According to the semiconductor relay element according to the present invention, it is possible to surely drive the motor and to reduce the size of the entire circuit even in applications such as a motor that flows a large current of several tens to several hundreds of A.

  According to the semiconductor relay element of the present invention, since the first gate electrode portion and the second gate electrode portion are electrically connected by the metal member, the first semiconductor switch region and the second gate electrode are connected using a common drive circuit. The semiconductor switch region can be driven, and the entire circuit can be reduced in size and simplified.

  In the semiconductor relay element according to the present invention, when the first gate electrode portion and the second gate electrode portion must be separated from each other for the purpose of enhancing the breakdown voltage, or the metal member wiring pattern cannot be easily formed on the substrate. In some cases, it is preferable to electrically connect the first gate electrode portion and the second gate electrode by wire bonding. When the first gate electrode portion and the second gate electrode portion are electrically connected by wire bonding, the first gate electrode portion and the second gate electrode portion can be easily and reliably set to the same potential.

  The semiconductor relay module according to the present invention includes an input terminal and an output terminal, wherein the first source terminal electrode portion is electrically connected to the input terminal, and the second source electrode portion is electrically connected to the output terminal. Therefore, even in applications where a large current flows, reliable driving is possible, and the entire circuit can be reduced in size and simplified.

  According to the semiconductor relay module of the present invention, the booster boosts the first voltage between the input terminal and the reference terminal to be higher than the first voltage, and the first semiconductor switch region and the second semiconductor switch A second voltage equal to or higher than the gate threshold voltage of the region is generated, and the second voltage is applied between the first gate electrode portion and the reference terminal and between the second gate electrode portion and the reference terminal. Even in the application of current, reliable driving can be performed without using an insulating transformer or the like, and the entire circuit can be reduced in size and simplified.

It is a top view showing the model structure of the semiconductor relay element which concerns on the 1st Embodiment of this invention. It is sectional drawing showing the model structure of the semiconductor relay element which concerns on the 1st Embodiment of this invention. It is operation | movement explanatory drawing of the semiconductor relay element which concerns on the 1st Embodiment of this invention. It is a top view showing the model structure of the semiconductor relay element which concerns on the 2nd Embodiment of this invention. It is sectional drawing showing the model structure of the semiconductor relay element which concerns on the 2nd Embodiment of this invention. It is operation | movement explanatory drawing of the semiconductor relay element which concerns on the 2nd Embodiment of this invention. It is a circuit diagram which shows the structure of the circuit using the semiconductor relay module which concerns on the 3rd Embodiment of this invention. It is a circuit diagram which shows the structure of the circuit using the semiconductor relay module which concerns on the 4th Embodiment of this invention. It is a circuit diagram which shows the structure of the circuit using the conventional semiconductor relay module.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. It should be noted that the constituent elements in the present embodiment can be appropriately replaced with existing constituent elements and the like, and various variations in combination with other existing constituent elements are possible. Therefore, the description of the present embodiment does not limit the contents of the invention described in the claims.

(First embodiment)
FIG. 1 is a top view showing the structure of the semiconductor relay element according to the first embodiment of the present invention. FIG. 2 is a cross-sectional view showing the structure of the semiconductor relay element according to the first embodiment of the present invention. FIG. 3 is an operation explanatory diagram of the semiconductor relay element according to the first embodiment of the present invention.

  The semiconductor relay element 100 includes a first semiconductor switch region Q110 having a first gate electrode part G110 and a first source electrode part S110, a second gate electrode part G120, and a second source electrode part S120. And a semiconductor switch region Q120. Note that each of the first semiconductor switch region Q110 and the second semiconductor switch region Q120 has a structure in which a plurality of cells indicated by broken lines in the cross-sectional view of FIG. 2 are connected in parallel.

  The first semiconductor switch region Q110 and the second semiconductor switch region Q120 are formed adjacent to each other on the same substrate. The first semiconductor switch region Q110 and the second semiconductor switch region Q120 have a common drain electrode portion D100 formed on the same substrate.

  As described above, in the semiconductor relay element 100, the first semiconductor switch region Q110 and the second semiconductor switch region Q120 are formed adjacent to each other on the same substrate, and the first semiconductor switch region Q110 and the second semiconductor switch region are formed. Since Q120 is configured to have a common drain electrode portion D100 formed on the same substrate, the semiconductor relay element can be reduced in size.

  In the semiconductor relay element 100, the first semiconductor switch region Q110 and the second semiconductor switch region Q120 are formed adjacent to each other on the same substrate. The on-threshold distribution of the semiconductor switch region Q120 becomes an approximate value, and stable driving is possible.

  In the semiconductor relay element 100, when the first gate electrode part G110 and the second gate electrode part G120 have to be separated from each other for the purpose of enhancing the breakdown voltage, or the metal member wiring pattern cannot be easily formed on the substrate. In some cases, it is preferable to electrically connect the first gate electrode part G110 and the second gate electrode part G120 by wire bonding. When the first gate electrode part G110 and the second gate electrode part G120 are electrically connected by wire bonding, the first gate electrode part and the second gate electrode part can be easily and reliably set to the same potential.

  In this case, the first semiconductor switch region Q110 and the second semiconductor switch region Q120 can drive the first semiconductor switch region Q110 and the second semiconductor switch region Q120 by using a common drive circuit, and the entire circuit can be driven. Small and simple.

  The first gate electrode part G110 and the second gate electrode part G120 may be electrically connected by forming a metal pattern layer on the substrate.

  In the semiconductor relay element 100, an N-type semiconductor layer (n ++ layer) 131 and an N-type semiconductor layer (n− layer) 132 made of a silicon material are formed on the drain electrode portion D100. In the upper part, a P-type semiconductor layer (p layer) 113 and a P-type semiconductor layer (p layer) 123 made of a silicon material are formed.

  Further, an N-type semiconductor layer (n + layer) 115 and an N-type semiconductor layer (n + layer) 125 made of a silicon material are formed on the P-type semiconductor layer 113 and the P-type semiconductor layer 123, respectively. .

  An insulating layer 117 made of a silicon dioxide material is formed on part of the upper portion of the N-type semiconductor layer 132, the P-type semiconductor layer 113, and the N-type semiconductor layer 115. In addition, an insulating layer 127 is connected to part of the upper portions of the N-type semiconductor layer 132, the P-type semiconductor layer 123, and the N-type semiconductor layer 125.

  A first source electrode portion S110 made of a metal member such as an aluminum material is formed on part of the upper portion of the P-type semiconductor layer 113 and the N-type semiconductor layer 115. In addition, a second source electrode portion S120 made of a metal member is formed on part of the upper portion of the P-type semiconductor layer 123 and the N-type semiconductor layer 125.

  On the insulating layer 117, an N-type semiconductor layer (n + layer) 118 made of a polysilicon material is formed. A first gate electrode portion G110 made of a metal member is formed on the N-type semiconductor layer 118. Further, an N-type semiconductor layer 128 is formed on the insulating layer 127. A 21st gate electrode portion G120 made of a metal member is formed on the N-type semiconductor layer 128.

  In the semiconductor relay element 100, the first gate electrode part G110, the second gate electrode part G120, the second gate electrode part G120, and the second gate electrode part G120 with the positive first voltage V1 applied between the drain electrode part D100 and the second source electrode part S120. When a second voltage V2 higher than the first voltage V1 is applied between the source electrode unit S120, carriers as shown in FIG. 3 flow, and the first semiconductor switch region Q110 and the second semiconductor switch region Q120 are turned on. Become.

  In this state, in the semiconductor relay element 100 in which the first semiconductor switch region Q110 and the second semiconductor switch region Q120 are formed adjacent to each other on the same substrate, carriers of the first semiconductor switch region Q110 and the second semiconductor switch region Q120 are formed. Can move to each other inside the semiconductor element. Therefore, the conduction loss can be reduced as compared with the case where MOSFETs of different chips are connected in series.

  According to the semiconductor relay element 100 according to the first embodiment, the first semiconductor switch region Q110 and the second semiconductor switch region Q120 are formed adjacent to each other on the same substrate, and the first semiconductor switch region Q110 and the second semiconductor switch region Q110 The semiconductor switch region Q120 has a common drain electrode portion D100 formed on the same substrate.

  Therefore, since the first semiconductor switch region Q110 and the second semiconductor switch region Q120 are formed adjacent to each other on the same substrate, the carriers of the first semiconductor switch region Q110 and the second semiconductor switch region Q120 are inside the semiconductor element. They can move to each other, and the conduction loss can be reduced as compared with the case where MOSFETs of different chips are connected in series.

  Further, according to the semiconductor relay element 100 according to the first embodiment, the first semiconductor switch region Q110 and the second semiconductor switch region Q120 are formed adjacent to each other on the same substrate. The on-threshold distribution of the first semiconductor switch region Q110 and the second semiconductor switch region Q120 becomes an approximate value, and stable driving is possible.

  Further, according to the semiconductor relay element 100 according to the first embodiment, the first gate electrode part G110 and the second gate electrode part G120 are configured to be electrically connected by a metal member, thereby using a common drive circuit. Thus, the first semiconductor switch region Q110 and the second semiconductor switch region Q120 can be driven, and the entire circuit can be reduced in size and simplified.

  In addition to these, according to the semiconductor relay element 100 according to the first embodiment, when the first gate electrode part G110 and the second gate electrode part G120 are electrically connected by wire bonding, the semiconductor relay element 100 is manufactured. Can be facilitated.

(Second Embodiment)
FIG. 4 is a top view showing the structure of the semiconductor relay element according to the second embodiment of the present invention. FIG. 5 is a sectional view showing the structure of a semiconductor relay element according to the second embodiment of the present invention. FIG. 6 is an operation explanatory diagram of the semiconductor relay element according to the second embodiment of the present invention.

  In the second embodiment, description of common parts with the first embodiment is omitted, and only parts different from the first embodiment will be described. In the second embodiment, as in the first embodiment, in the first semiconductor switch region Q110 and the second semiconductor switch region Q120, the cells indicated by the broken line in the cross-sectional view of FIG. Are connected in parallel.

  In the second embodiment, the first gate electrode part G110 and the second gate electrode part G120 are formed adjacent to each other, and the first gate electrode part G110 and the second gate electrode part G120 are formed by forming a metal pattern layer on the substrate. The two gate electrode portions G120 are electrically connected.

  In the second embodiment, as shown in FIG. 5, between the first semiconductor switch region Q110 and the second semiconductor switch region Q120, an N-type semiconductor layer (n + layer) 150 made of silicon material and A P-type semiconductor layer (p layer) 160 is formed. Such a structure is preferable in that a breakdown voltage can be secured even if the first gate electrode part G110 and the second gate electrode part G120 are formed adjacent to each other.

  In the second embodiment, as in the first embodiment, in the semiconductor relay element 100, the positive first voltage V1 is applied between the drain electrode portion D100 and the second source electrode portion S120. When a second voltage V2 higher than the first voltage V1 is applied between the first gate electrode part G110 and the second gate electrode part G120 and the second source electrode part S120, carriers as shown in FIG. The semiconductor switch region Q110 and the second semiconductor switch region Q120 are turned on.

  In this state, in the semiconductor relay element 100 in which the first semiconductor switch region Q110 and the second semiconductor switch region Q120 are formed adjacent to each other on the same substrate, carriers of the first semiconductor switch region Q110 and the second semiconductor switch region Q120 are formed. Can move to each other inside the semiconductor element. Therefore, the conduction loss can be reduced as compared with the case where MOSFETs of different chips are connected in series.

  In the semiconductor relay element 100 according to the second embodiment, even when the first gate electrode part G110 and the second gate electrode part G120 are formed adjacent to each other, it is possible to ensure a withstand voltage, which is the same as in the first embodiment. The effect of can be produced.

  Further, according to the semiconductor relay element 100 according to the second embodiment, the first gate electrode part G110 and the second gate electrode part G120 are metal members (for example, metal member wiring layers made of aluminum material) that are not wire bonding. Electrical connection is possible, and the manufacturing of the semiconductor relay element 100 can be simplified.

(Third embodiment)
FIG. 7 is a circuit diagram showing a configuration of the circuit 1 using the semiconductor relay module 200 according to the third embodiment of the present invention.

  The circuit 1 includes a DC power supply 5, a load 10, and a semiconductor relay module 200. The semiconductor relay module 200 is provided between the DC power supply 5 and the load 10 and shorts or opens the DC power supply 5 and the load 10.

  The semiconductor relay module 200 is an example including the semiconductor relay element 100 described in the first embodiment or the second embodiment. The semiconductor relay module 200 includes an input terminal 201 and an output terminal 202. The first source terminal electrode portion S110 is electrically connected to the input terminal 201, and the second source electrode portion S120 is electrically connected to the output terminal 202.

  The body diode BD110 in the first semiconductor switch region Q110 functions as a backflow prevention diode when the DC power supply 5 is reversely connected.

  Furthermore, the semiconductor relay module 200 includes a control terminal 203 that is electrically connected to the first gate electrode part G110 and the second gate electrode part G120.

  In the semiconductor relay module 200, the voltage between the control terminal 203 and the GND of the circuit 1 is higher than the voltage of the DC power supply 5 and is equal to or higher than the gate threshold voltage Vth of the first semiconductor switch region Q110 and the second semiconductor switch region Q120. When the positive drive voltage is applied, the first semiconductor switch region Q110 and the second semiconductor switch region Q120 are turned on.

  When the first semiconductor switch region Q110 and the second semiconductor switch region Q120 are turned on, power is supplied from the DC power supply 5 to the load 10.

  According to the semiconductor relay element 100 according to the third embodiment, the input terminal 201 and the output terminal 202 are provided. The first source terminal electrode unit S110 is electrically connected to the input terminal 201, and the second source electrode unit S120. Is electrically connected to the output terminal 202, so that it can be reliably driven even in applications where a large current flows, and the entire circuit can be reduced in size and simplified.

(Fourth embodiment)
FIG. 8 is a circuit diagram showing a configuration of the circuit 2 using the semiconductor relay module 210 according to the fourth embodiment of the present invention.

  The circuit 2 includes a DC power supply 5, a load 10, and a semiconductor relay module 210. The semiconductor relay module 210 is provided between the DC power supply 5 and the load 10 and shorts or opens the DC power supply 5 and the load 10.

  The semiconductor relay module 210 is an example including the semiconductor relay element 100 described in the first embodiment or the second embodiment.

  The semiconductor relay module 210 is electrically connected to the first gate electrode part G110 and the second gate electrode part G120 at a point A in FIG. 8, and is connected to a booster part 250 described later. Further, the semiconductor relay module 210 includes a reference terminal 205 that is an electrical reference potential.

  The semiconductor relay module 210 includes a booster 250. For example, the booster 250 has a charge pump circuit configuration. The booster 250 is preferable in that it uses a charge pump circuit and a simple configuration, and can be reliably driven, and the entire circuit can be reduced in size and simplified.

  The booster 250 boosts the first voltage V1 between the input terminal 201 and the reference terminal 205 to be higher than the first voltage V1, and the gate threshold values of the first semiconductor switch region Q110 and the second semiconductor switch region Q120. A second voltage V2 that is equal to or higher than the voltage Vth is generated.

  In addition, the boosting unit 250 is connected between the first gate electrode unit G110 and the reference terminal 205 and between the second gate electrode unit G120 and the reference terminal 205, that is, the point A and the reference terminal 205 shown in FIG. During this time, the second voltage V2 is applied.

  When the booster 250 applies the second voltage V2 between the point A shown in FIG. 8 and the reference terminal 205, the semiconductor relay element 100 of the semiconductor relay module 210 is turned on.

  When the first semiconductor switch region Q110 and the second semiconductor switch region Q120 are turned on, power is supplied from the DC power supply 5 to the load 10.

  According to the semiconductor relay element 100 according to the fourth embodiment, the booster 250 boosts the first voltage V1 between the input terminal 201 and the reference terminal 205 to increase the second voltage V2 higher than the first voltage V1. Is generated.

  The booster 250 applies the second voltage V2 between the first gate electrode part G110 and the reference terminal 205 and between the second gate electrode part G120 and the reference terminal 205.

  Therefore, even in applications where a large current flows, reliable driving is possible without using an insulating transformer or the like, and the entire circuit can be reduced in size and simplified.

  As mentioned above, although embodiment of this invention was described, this invention is not limited to embodiment mentioned above, A various deformation | transformation and application are possible within the range which does not deviate from the summary of this invention.

1: Circuit 5: DC power supply 10: Load 100: Semiconductor relay element Q110: First semiconductor switch region Q120: Second semiconductor switch region D100: Common drain electrode portion G110: First gate electrode portion G120: Second gate electrode portion S110 : 1st source electrode part S120: 2nd source electrode part 200: Semiconductor relay module 250: Boosting part

Claims (5)

A first semiconductor switch region having a first gate electrode portion and a first source electrode portion;
A second semiconductor switch region having a second gate electrode portion and a second source electrode portion;
With
The first semiconductor switch region and the second semiconductor switch region are formed adjacent to each other on the same substrate, and the first semiconductor switch region and the second semiconductor switch region are formed on the same substrate. A semiconductor relay element having a portion.   The semiconductor relay element according to claim 1, wherein the first gate electrode portion and the second gate electrode portion are electrically connected by a metal member.   The semiconductor relay element according to claim 2, wherein the first gate electrode portion and the second gate electrode portion are electrically connected by wire bonding. A semiconductor relay element according to any one of claims 1 to 3, further comprising an input terminal and an output terminal,
The semiconductor relay module according to claim 1, wherein the first source terminal electrode portion is electrically connected to the input terminal, and the second source electrode portion is electrically connected to the output terminal. A reference terminal that is an electrical reference potential;
A first voltage between the input terminal and the reference terminal is boosted to generate a second voltage that is higher than the first voltage and equal to or higher than the gate threshold voltage of the first semiconductor switch region and the second semiconductor switch region. A boosting unit that applies the second voltage between the first gate electrode unit and the reference terminal and between the second gate electrode unit and the reference terminal;
The semiconductor relay module according to claim 4, comprising:

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