JP2000223715A - 薄膜トランジスタの作製方法およびアクティブマトリクス基板の作製方法 - Google Patents

薄膜トランジスタの作製方法およびアクティブマトリクス基板の作製方法

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Publication number
JP2000223715A
JP2000223715A JP33350599A JP33350599A JP2000223715A JP 2000223715 A JP2000223715 A JP 2000223715A JP 33350599 A JP33350599 A JP 33350599A JP 33350599 A JP33350599 A JP 33350599A JP 2000223715 A JP2000223715 A JP 2000223715A
Authority
JP
Japan
Prior art keywords
pattern
conductive film
semiconductor layer
film
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP33350599A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000223715A5 (enExample
Inventor
Hisashi Otani
久 大谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP33350599A priority Critical patent/JP2000223715A/ja
Publication of JP2000223715A publication Critical patent/JP2000223715A/ja
Publication of JP2000223715A5 publication Critical patent/JP2000223715A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP33350599A 1998-11-25 1999-11-24 薄膜トランジスタの作製方法およびアクティブマトリクス基板の作製方法 Withdrawn JP2000223715A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33350599A JP2000223715A (ja) 1998-11-25 1999-11-24 薄膜トランジスタの作製方法およびアクティブマトリクス基板の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10-333853 1998-11-25
JP33385398 1998-11-25
JP33350599A JP2000223715A (ja) 1998-11-25 1999-11-24 薄膜トランジスタの作製方法およびアクティブマトリクス基板の作製方法

Publications (2)

Publication Number Publication Date
JP2000223715A true JP2000223715A (ja) 2000-08-11
JP2000223715A5 JP2000223715A5 (enExample) 2007-01-11

Family

ID=26574537

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JP33350599A Withdrawn JP2000223715A (ja) 1998-11-25 1999-11-24 薄膜トランジスタの作製方法およびアクティブマトリクス基板の作製方法

Country Status (1)

Country Link
JP (1) JP2000223715A (enExample)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002182237A (ja) * 2000-12-11 2002-06-26 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2002189533A (ja) * 2000-08-23 2002-07-05 Semiconductor Energy Lab Co Ltd 携帯型の電子機器
JP2003150079A (ja) * 2001-11-08 2003-05-21 Matsushita Electric Ind Co Ltd エレクトロルミネッセンス表示装置およびエレクトロルミネッセンス表示装置の製造方法
JP2003295793A (ja) * 2002-01-18 2003-10-15 Semiconductor Energy Lab Co Ltd 発光装置及び電子機器
JP2003330391A (ja) * 2002-01-18 2003-11-19 Semiconductor Energy Lab Co Ltd 発光装置及び電子機器
US6909240B2 (en) 2002-01-18 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
JP2007041612A (ja) * 2002-01-18 2007-02-15 Semiconductor Energy Lab Co Ltd 発光装置、電子機器
JP2007183656A (ja) * 2000-12-29 2007-07-19 Lg Philips Lcd Co Ltd アクティブマトリックス有機電界発光ディスプレイ装置及びその製造方法
US7393792B2 (en) 2000-12-12 2008-07-01 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method of fabricating the same
US7459352B2 (en) 2000-12-11 2008-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and manufacturing method thereof
US7920215B2 (en) 2000-08-23 2011-04-05 Semiconductor Energy Laboratory Co., Ltd. Portable electronic device
US8013346B2 (en) * 2000-12-21 2011-09-06 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
JP2012089878A (ja) * 2000-08-25 2012-05-10 Semiconductor Energy Lab Co Ltd 発光装置
JP2012089859A (ja) * 2000-08-14 2012-05-10 Semiconductor Energy Lab Co Ltd Ｅｌ表示装置及びその作製方法
JP2012169285A (ja) * 2000-09-18 2012-09-06 Semiconductor Energy Lab Co Ltd 表示装置及び電子機器
US20130119364A1 (en) * 2001-02-01 2013-05-16 Semiconductor Energy Laboratory Co., Ltd. Deposition apparatus and deposition method
KR20140108791A (ko) * 2013-02-28 2014-09-15 엘지디스플레이 주식회사 유기전계발광표시장치 및 그 제조방법
WO2015023006A1 (en) * 2013-08-12 2015-02-19 Silicon Display Technology Display device of thin film transistor with touch sensor and method of manufacturing the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04260336A (ja) * 1991-02-15 1992-09-16 Matsushita Electron Corp 薄膜トランジスタの製造方法と液晶表示装置の製造方法
JPH07176750A (ja) * 1993-12-20 1995-07-14 Sharp Corp 薄膜トランジスターの製造方法
JPH07318978A (ja) * 1994-05-20 1995-12-08 Sony Corp 表示素子用薄膜トランジスタアレイ
JPH10256552A (ja) * 1997-03-12 1998-09-25 Fujitsu Ltd 半導体装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04260336A (ja) * 1991-02-15 1992-09-16 Matsushita Electron Corp 薄膜トランジスタの製造方法と液晶表示装置の製造方法
JPH07176750A (ja) * 1993-12-20 1995-07-14 Sharp Corp 薄膜トランジスターの製造方法
JPH07318978A (ja) * 1994-05-20 1995-12-08 Sony Corp 表示素子用薄膜トランジスタアレイ
JPH10256552A (ja) * 1997-03-12 1998-09-25 Fujitsu Ltd 半導体装置の製造方法

Cited By (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012089859A (ja) * 2000-08-14 2012-05-10 Semiconductor Energy Lab Co Ltd Ｅｌ表示装置及びその作製方法
US7920215B2 (en) 2000-08-23 2011-04-05 Semiconductor Energy Laboratory Co., Ltd. Portable electronic device
JP2002189533A (ja) * 2000-08-23 2002-07-05 Semiconductor Energy Lab Co Ltd 携帯型の電子機器
US9454028B2 (en) 2000-08-23 2016-09-27 Semiconductor Energy Laboratory Co., Ltd. Portable electronic device
JP2012213237A (ja) * 2000-08-23 2012-11-01 Semiconductor Energy Lab Co Ltd 携帯型電子機器
JP2012089878A (ja) * 2000-08-25 2012-05-10 Semiconductor Energy Lab Co Ltd 発光装置
US9263503B2 (en) 2000-09-18 2016-02-16 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating the display device
US8618732B2 (en) 2000-09-18 2013-12-31 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating the display device
JP2012169285A (ja) * 2000-09-18 2012-09-06 Semiconductor Energy Lab Co Ltd 表示装置及び電子機器
US9059216B2 (en) 2000-12-11 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and manufacturing method thereof
US7459352B2 (en) 2000-12-11 2008-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and manufacturing method thereof
JP2002182237A (ja) * 2000-12-11 2002-06-26 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US9666601B2 (en) 2000-12-11 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and manufacturing method thereof
US10665610B2 (en) 2000-12-11 2020-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and manufacturing method thereof
US8421135B2 (en) 2000-12-11 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and manufacturing method thereof
US7393792B2 (en) 2000-12-12 2008-07-01 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method of fabricating the same
US8013346B2 (en) * 2000-12-21 2011-09-06 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US9793335B2 (en) 2000-12-21 2017-10-17 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US9231044B2 (en) 2000-12-21 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US8735909B2 (en) 2000-12-21 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
JP2007183656A (ja) * 2000-12-29 2007-07-19 Lg Philips Lcd Co Ltd アクティブマトリックス有機電界発光ディスプレイ装置及びその製造方法
US7285435B2 (en) 2000-12-29 2007-10-23 Lg.Philips Lcd Co., Ltd. Active matrix organic electroluminescence display device and method for manufacturing the same
US20130119364A1 (en) * 2001-02-01 2013-05-16 Semiconductor Energy Laboratory Co., Ltd. Deposition apparatus and deposition method
US9349977B2 (en) * 2001-02-01 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device having mixed layer including hole transporting compound
JP2003150079A (ja) * 2001-11-08 2003-05-21 Matsushita Electric Ind Co Ltd エレクトロルミネッセンス表示装置およびエレクトロルミネッセンス表示装置の製造方法
JP2007041612A (ja) * 2002-01-18 2007-02-15 Semiconductor Energy Lab Co Ltd 発光装置、電子機器
JP2003295793A (ja) * 2002-01-18 2003-10-15 Semiconductor Energy Lab Co Ltd 発光装置及び電子機器
JP2003330391A (ja) * 2002-01-18 2003-11-19 Semiconductor Energy Lab Co Ltd 発光装置及び電子機器
US6909240B2 (en) 2002-01-18 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US7262556B2 (en) 2002-01-18 2007-08-28 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US10978613B2 (en) 2002-01-18 2021-04-13 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
KR20140108791A (ko) * 2013-02-28 2014-09-15 엘지디스플레이 주식회사 유기전계발광표시장치 및 그 제조방법
KR102019191B1 (ko) * 2013-02-28 2019-09-09 엘지디스플레이 주식회사 유기전계발광표시장치 및 그 제조방법
WO2015023006A1 (en) * 2013-08-12 2015-02-19 Silicon Display Technology Display device of thin film transistor with touch sensor and method of manufacturing the same

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