JP2000223715A5 - - Google Patents

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Publication number
JP2000223715A5
JP2000223715A5 JP1999333505A JP33350599A JP2000223715A5 JP 2000223715 A5 JP2000223715 A5 JP 2000223715A5 JP 1999333505 A JP1999333505 A JP 1999333505A JP 33350599 A JP33350599 A JP 33350599A JP 2000223715 A5 JP2000223715 A5 JP 2000223715A5
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JP
Japan
Prior art keywords
conductive film
semiconductor layer
photoresist
pattern
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP1999333505A
Other languages
English (en)
Japanese (ja)
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JP2000223715A (ja
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Publication date
Application filed filed Critical
Priority to JP33350599A priority Critical patent/JP2000223715A/ja
Priority claimed from JP33350599A external-priority patent/JP2000223715A/ja
Publication of JP2000223715A publication Critical patent/JP2000223715A/ja
Publication of JP2000223715A5 publication Critical patent/JP2000223715A5/ja
Withdrawn legal-status Critical Current

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JP33350599A 1998-11-25 1999-11-24 薄膜トランジスタの作製方法およびアクティブマトリクス基板の作製方法 Withdrawn JP2000223715A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33350599A JP2000223715A (ja) 1998-11-25 1999-11-24 薄膜トランジスタの作製方法およびアクティブマトリクス基板の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP33385398 1998-11-25
JP10-333853 1998-11-25
JP33350599A JP2000223715A (ja) 1998-11-25 1999-11-24 薄膜トランジスタの作製方法およびアクティブマトリクス基板の作製方法

Publications (2)

Publication Number Publication Date
JP2000223715A JP2000223715A (ja) 2000-08-11
JP2000223715A5 true JP2000223715A5 (enExample) 2007-01-11

Family

ID=26574537

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33350599A Withdrawn JP2000223715A (ja) 1998-11-25 1999-11-24 薄膜トランジスタの作製方法およびアクティブマトリクス基板の作製方法

Country Status (1)

Country Link
JP (1) JP2000223715A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8723760B2 (en) 2002-01-18 2014-05-13 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5143272B2 (ja) * 2000-08-14 2013-02-13 株式会社半導体エネルギー研究所 Ｅｌ表示装置の作製方法
JP2002189533A (ja) * 2000-08-23 2002-07-05 Semiconductor Energy Lab Co Ltd 携帯型の電子機器
US7430025B2 (en) * 2000-08-23 2008-09-30 Semiconductor Energy Laboratory Co., Ltd. Portable electronic device
JP2012089878A (ja) * 2000-08-25 2012-05-10 Semiconductor Energy Lab Co Ltd 発光装置
US6739931B2 (en) * 2000-09-18 2004-05-25 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating the display device
TW525216B (en) 2000-12-11 2003-03-21 Semiconductor Energy Lab Semiconductor device, and manufacturing method thereof
JP4112168B2 (ja) * 2000-12-11 2008-07-02 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US6965124B2 (en) 2000-12-12 2005-11-15 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method of fabricating the same
SG111923A1 (en) 2000-12-21 2005-06-29 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
KR100672628B1 (ko) 2000-12-29 2007-01-23 엘지.필립스 엘시디 주식회사 액티브 매트릭스 유기 전계발광 디스플레이 장치
CN101397649B (zh) * 2001-02-01 2011-12-28 株式会社半导体能源研究所 能够将有机化合物沉积在衬底上的装置
JP4103373B2 (ja) * 2001-11-08 2008-06-18 松下電器産業株式会社 エレクトロルミネッセンス表示装置およびエレクトロルミネッセンス表示装置の製造方法
JP3706107B2 (ja) * 2002-01-18 2005-10-12 株式会社半導体エネルギー研究所 発光装置及び電子機器
JP4490403B2 (ja) * 2002-01-18 2010-06-23 株式会社半導体エネルギー研究所 発光装置
JP3939666B2 (ja) * 2002-01-18 2007-07-04 株式会社半導体エネルギー研究所 発光装置及び電子機器
KR102019191B1 (ko) * 2013-02-28 2019-09-09 엘지디스플레이 주식회사 유기전계발광표시장치 및 그 제조방법
WO2015023006A1 (en) * 2013-08-12 2015-02-19 Silicon Display Technology Display device of thin film transistor with touch sensor and method of manufacturing the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04260336A (ja) * 1991-02-15 1992-09-16 Matsushita Electron Corp 薄膜トランジスタの製造方法と液晶表示装置の製造方法
JP2905680B2 (ja) * 1993-12-20 1999-06-14 シャープ株式会社 薄膜トランジスターの製造方法
JPH07318978A (ja) * 1994-05-20 1995-12-08 Sony Corp 表示素子用薄膜トランジスタアレイ
JPH10256552A (ja) * 1997-03-12 1998-09-25 Fujitsu Ltd 半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8723760B2 (en) 2002-01-18 2014-05-13 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device

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