JP2000223711A5 - - Google Patents
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- Publication number
- JP2000223711A5 JP2000223711A5 JP1999020863A JP2086399A JP2000223711A5 JP 2000223711 A5 JP2000223711 A5 JP 2000223711A5 JP 1999020863 A JP1999020863 A JP 1999020863A JP 2086399 A JP2086399 A JP 2086399A JP 2000223711 A5 JP2000223711 A5 JP 2000223711A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- insulating film
- low
- channels
- concentration impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010408 film Substances 0.000 description 46
- 239000012535 impurity Substances 0.000 description 43
- 239000004065 semiconductor Substances 0.000 description 33
- 239000010409 thin film Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02086399A JP4372879B2 (ja) | 1999-01-29 | 1999-01-29 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02086399A JP4372879B2 (ja) | 1999-01-29 | 1999-01-29 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000223711A JP2000223711A (ja) | 2000-08-11 |
| JP2000223711A5 true JP2000223711A5 (https=) | 2006-03-09 |
| JP4372879B2 JP4372879B2 (ja) | 2009-11-25 |
Family
ID=12038989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP02086399A Expired - Fee Related JP4372879B2 (ja) | 1999-01-29 | 1999-01-29 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4372879B2 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002158358A (ja) * | 2000-11-20 | 2002-05-31 | Sony Corp | 薄膜半導体装置の製造方法 |
| JP2006269808A (ja) | 2005-03-24 | 2006-10-05 | Mitsubishi Electric Corp | 半導体装置および画像表示装置 |
| US8436353B2 (en) | 2008-09-16 | 2013-05-07 | Sharp Kabushiki Kaisha | Thin film transistor with recess |
| JP2019075572A (ja) * | 2018-12-18 | 2019-05-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2020208704A1 (ja) * | 2019-04-09 | 2020-10-15 | シャープ株式会社 | 表示装置および製造方法 |
-
1999
- 1999-01-29 JP JP02086399A patent/JP4372879B2/ja not_active Expired - Fee Related
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