JP2000216399A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2000216399A5 JP2000216399A5 JP1999327509A JP32750999A JP2000216399A5 JP 2000216399 A5 JP2000216399 A5 JP 2000216399A5 JP 1999327509 A JP1999327509 A JP 1999327509A JP 32750999 A JP32750999 A JP 32750999A JP 2000216399 A5 JP2000216399 A5 JP 2000216399A5
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- insulating film
- gate
- semiconductor layer
- gate insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 description 46
- 239000012535 impurity Substances 0.000 description 24
- 239000000203 mixture Substances 0.000 description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- 241001385733 Aesculus indica Species 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical compound [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N Tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005755 formation reaction Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32750999A JP4536187B2 (ja) | 1998-11-17 | 1999-11-17 | 半導体装置およびその作製方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32735698 | 1998-11-17 | ||
JP10-327356 | 1998-11-17 | ||
JP32750999A JP4536187B2 (ja) | 1998-11-17 | 1999-11-17 | 半導体装置およびその作製方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2000216399A JP2000216399A (ja) | 2000-08-04 |
JP2000216399A5 true JP2000216399A5 (zh) | 2007-04-26 |
JP4536187B2 JP4536187B2 (ja) | 2010-09-01 |
Family
ID=26572474
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP32750999A Expired - Fee Related JP4536187B2 (ja) | 1998-11-17 | 1999-11-17 | 半導体装置およびその作製方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4536187B2 (zh) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7030551B2 (en) | 2000-08-10 | 2006-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Area sensor and display apparatus provided with an area sensor |
US7223643B2 (en) | 2000-08-11 | 2007-05-29 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
JP4954401B2 (ja) * | 2000-08-11 | 2012-06-13 | 株式会社半導体エネルギー研究所 | 半導体装置の製造方法 |
JP2012089878A (ja) * | 2000-08-25 | 2012-05-10 | Semiconductor Energy Lab Co Ltd | 発光装置 |
US6924594B2 (en) * | 2000-10-03 | 2005-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
JP5046452B2 (ja) * | 2000-10-26 | 2012-10-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
TW525216B (en) | 2000-12-11 | 2003-03-21 | Semiconductor Energy Lab | Semiconductor device, and manufacturing method thereof |
SG103846A1 (en) | 2001-02-28 | 2004-05-26 | Semiconductor Energy Lab | A method of manufacturing a semiconductor device |
JP4831885B2 (ja) | 2001-04-27 | 2011-12-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4683817B2 (ja) * | 2002-09-27 | 2011-05-18 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
CN100345310C (zh) * | 2004-04-26 | 2007-10-24 | 统宝光电股份有限公司 | 薄膜晶体管及其制作方法 |
JP4876548B2 (ja) | 2005-11-22 | 2012-02-15 | セイコーエプソン株式会社 | 電気光学装置の製造方法 |
JP2015122538A (ja) * | 2015-03-09 | 2015-07-02 | 株式会社半導体エネルギー研究所 | 半導体装置 |
WO2016175086A1 (ja) * | 2015-04-28 | 2016-11-03 | シャープ株式会社 | 半導体装置及びその製造方法 |
JP2016021587A (ja) * | 2015-09-08 | 2016-02-04 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2017037340A (ja) * | 2016-10-26 | 2017-02-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
WO2020188643A1 (ja) * | 2019-03-15 | 2020-09-24 | シャープ株式会社 | 表示装置 |
CN115206994A (zh) * | 2021-04-09 | 2022-10-18 | 株式会社日本显示器 | 显示装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3173135B2 (ja) * | 1992-06-24 | 2001-06-04 | セイコーエプソン株式会社 | 薄膜半導体装置及びその製造方法 |
JP2551724B2 (ja) * | 1993-03-04 | 1996-11-06 | 株式会社高度映像技術研究所 | 薄膜半導体装置およびその製造方法 |
JP3762002B2 (ja) * | 1996-11-29 | 2006-03-29 | 株式会社東芝 | 薄膜トランジスタ、及び液晶表示装置 |
GB9806609D0 (en) * | 1998-03-28 | 1998-05-27 | Philips Electronics Nv | Electronic devices comprising thin-film transistors |
JP4641581B2 (ja) * | 1998-11-10 | 2011-03-02 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
-
1999
- 1999-11-17 JP JP32750999A patent/JP4536187B2/ja not_active Expired - Fee Related
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2000216399A5 (zh) | ||
TW506228B (en) | Electroluminescence display device | |
JP5380037B2 (ja) | 半導体装置の作製方法 | |
TWI381529B (zh) | 顯示裝置及其製造方法 | |
JP2000036598A5 (ja) | 半導体装置及びその作製方法 | |
JP2000228527A5 (zh) | ||
JP2000183356A5 (zh) | ||
JP2003273361A (ja) | 半導体装置およびその製造方法 | |
JP2000196093A5 (zh) | ||
KR100831881B1 (ko) | 박막 반도체 장치 | |
JP5421357B2 (ja) | 表示装置用薄膜半導体装置及びその製造方法 | |
US9911618B2 (en) | Low temperature poly-silicon thin film transistor, fabricating method thereof, array substrate and display device | |
TW201041144A (en) | Thin film transistor, method of manufacturing the same, and display device | |
JP2000194014A5 (zh) | ||
JP2000236097A5 (zh) | ||
JP2009033002A (ja) | 画像表示装置 | |
JP2000216396A5 (zh) | ||
JP2015023161A (ja) | 薄膜トランジスタおよびその製造方法ならびに電子機器 | |
JP2003051599A5 (zh) | ||
JP2003023161A5 (zh) | ||
TWI820029B (zh) | 電晶體及電子機器 | |
WO2016104253A1 (ja) | 半導体装置 | |
JP2000243975A5 (zh) | ||
JP5577384B2 (ja) | 半導体装置の作製方法 | |
TW200425458A (en) | Electrostatic discharge protection device and manufacturing method thereof |