JP2000106454A5 - - Google Patents
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- JP2000106454A5 JP2000106454A5 JP1999212134A JP21213499A JP2000106454A5 JP 2000106454 A5 JP2000106454 A5 JP 2000106454A5 JP 1999212134 A JP1999212134 A JP 1999212134A JP 21213499 A JP21213499 A JP 21213499A JP 2000106454 A5 JP2000106454 A5 JP 2000106454A5
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- 239000010410 layer Substances 0.000 description 48
- 239000000758 substrate Substances 0.000 description 15
- 238000005530 etching Methods 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- 229920001721 Polyimide Polymers 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 239000004642 Polyimide Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 239000004793 Polystyrene Substances 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- 239000002800 charge carrier Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 229920002223 polystyrene Polymers 0.000 description 6
- 210000002381 Plasma Anatomy 0.000 description 5
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Substances OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- 238000009832 plasma treatment Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- MDPILPRLPQYEEN-UHFFFAOYSA-N Aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 229910008599 TiW Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical class [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- 230000001427 coherent Effects 0.000 description 2
- 238000005755 formation reaction Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004005 microsphere Substances 0.000 description 2
- 230000000051 modifying Effects 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000002269 spontaneous Effects 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive Effects 0.000 description 1
- 239000007900 aqueous suspension Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000000171 gas-source molecular beam epitaxy Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000002077 nanosphere Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
Applications Claiming Priority (13)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP98870164-5 | 1998-07-28 | ||
| EP98870164A EP0977063A1 (fr) | 1998-07-28 | 1998-07-28 | Socle et système pour interconnection optoélectronique et méthode de fabrication d'un tel socle et système |
| EP98870233 | 1998-10-30 | ||
| EP98870233-8 | 1998-10-30 | ||
| EP98870252A EP0977277A1 (fr) | 1998-07-28 | 1998-11-13 | Dispositifs émetteurs de rayonnement à haut rendement et méthode de fabrication |
| EP98870252-8 | 1998-11-13 | ||
| US11032298P | 1998-11-30 | 1998-11-30 | |
| US13135899P | 1999-04-28 | 1999-04-28 | |
| US98870233-8 | 1999-04-28 | ||
| US60/131358 | 1999-04-28 | ||
| US60/110322 | 1999-04-28 | ||
| US98870164-5 | 1999-04-28 | ||
| US98870252-8 | 1999-04-28 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009190302A Division JP2009295999A (ja) | 1998-07-28 | 2009-08-19 | 高効率で放射線を発するデバイスおよびそのようなデバイスの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000106454A JP2000106454A (ja) | 2000-04-11 |
| JP2000106454A5 true JP2000106454A5 (fr) | 2009-10-15 |
| JP5019664B2 JP5019664B2 (ja) | 2012-09-05 |
Family
ID=27514497
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21213499A Expired - Lifetime JP5019664B2 (ja) | 1998-07-28 | 1999-07-27 | 高効率で光を発するデバイスおよびそのようなデバイスの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5019664B2 (fr) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3586594B2 (ja) | 1999-08-25 | 2004-11-10 | シャープ株式会社 | 半導体発光素子およびその製造方法 |
| JP2003124514A (ja) * | 2001-10-17 | 2003-04-25 | Sony Corp | 半導体発光素子及びその製造方法 |
| US6730940B1 (en) * | 2002-10-29 | 2004-05-04 | Lumileds Lighting U.S., Llc | Enhanced brightness light emitting device spot emitter |
| US7262550B2 (en) * | 2003-04-15 | 2007-08-28 | Luminus Devices, Inc. | Light emitting diode utilizing a physical pattern |
| US7083993B2 (en) * | 2003-04-15 | 2006-08-01 | Luminus Devices, Inc. | Methods of making multi-layer light emitting devices |
| JP2005005679A (ja) * | 2003-04-15 | 2005-01-06 | Matsushita Electric Ind Co Ltd | 半導体発光素子およびその製造方法 |
| US7098589B2 (en) * | 2003-04-15 | 2006-08-29 | Luminus Devices, Inc. | Light emitting devices with high light collimation |
| US6831302B2 (en) * | 2003-04-15 | 2004-12-14 | Luminus Devices, Inc. | Light emitting devices with improved extraction efficiency |
| US7166871B2 (en) * | 2003-04-15 | 2007-01-23 | Luminus Devices, Inc. | Light emitting systems |
| CN100392875C (zh) * | 2003-06-16 | 2008-06-04 | 深圳市方大国科光电技术有限公司 | 一种可制备大功率发光二极管的半导体芯片 |
| US7161188B2 (en) | 2004-06-28 | 2007-01-09 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting element, semiconductor light emitting device, and method for fabricating semiconductor light emitting element |
| DE102004040277B4 (de) * | 2004-06-30 | 2015-07-30 | Osram Opto Semiconductors Gmbh | Reflektierendes Schichtsystem mit einer Mehrzahl von Schichten zur Aufbringung auf ein III/V-Verbindungshalbleitermaterial |
| CN100442557C (zh) * | 2004-06-30 | 2008-12-10 | 奥斯兰姆奥普托半导体有限责任公司 | 用于施加到ⅲ/ⅴ化合物半导体材料上的具有多个层的反射层系统 |
| JP2006261659A (ja) * | 2005-02-18 | 2006-09-28 | Sumitomo Chemical Co Ltd | 半導体発光素子の製造方法 |
| JP2007019318A (ja) * | 2005-07-08 | 2007-01-25 | Sumitomo Chemical Co Ltd | 半導体発光素子、半導体発光素子用基板の製造方法及び半導体発光素子の製造方法 |
| JP4986445B2 (ja) * | 2005-12-13 | 2012-07-25 | 昭和電工株式会社 | 窒化ガリウム系化合物半導体発光素子 |
| JP2007173579A (ja) * | 2005-12-22 | 2007-07-05 | Matsushita Electric Works Ltd | 半導体発光素子およびその製造方法 |
| JP2007250714A (ja) * | 2006-03-15 | 2007-09-27 | Kyocera Corp | 発光素子 |
| DE102007004303A1 (de) | 2006-08-04 | 2008-02-07 | Osram Opto Semiconductors Gmbh | Dünnfilm-Halbleiterbauelement und Bauelement-Verbund |
| SG140481A1 (en) * | 2006-08-22 | 2008-03-28 | Agency Science Tech & Res | A method for fabricating micro and nano structures |
| DE102007004304A1 (de) | 2007-01-29 | 2008-07-31 | Osram Opto Semiconductors Gmbh | Dünnfilm-Leuchtdioden-Chip und Verfahren zur Herstellung eines Dünnfilm-Leuchtdioden-Chips |
| JP2008205985A (ja) * | 2007-02-22 | 2008-09-04 | Oki Data Corp | Ｌｅｄ表示装置及び投射表示装置 |
| DE102007060204B4 (de) * | 2007-09-28 | 2019-02-28 | Osram Opto Semiconductors Gmbh | Strahlung emittierender Halbleiterchip |
| JP4545188B2 (ja) * | 2007-12-25 | 2010-09-15 | 株式会社沖データ | Ｌｅｄバックライト装置及び液晶表示装置 |
| US8013952B2 (en) | 2007-12-25 | 2011-09-06 | Oki Data Corporation | LED backlight device and LCD device |
| JP5152520B2 (ja) * | 2009-01-28 | 2013-02-27 | 国立大学法人北海道大学 | 半導体発光素子 |
| KR101000311B1 (ko) | 2010-07-27 | 2010-12-13 | (주)더리즈 | 반도체 발광소자 및 그 제조방법 |
| JP5409707B2 (ja) * | 2011-06-15 | 2014-02-05 | シャープ株式会社 | 半導体素子、半導体素子の製造方法、発光ダイオード、光電変換素子、太陽電池、照明装置、バックライトおよび表示装置 |
| US9812609B1 (en) | 2016-04-11 | 2017-11-07 | X Development Llc | Semiconductor device including oxide current aperture |
| JP6631425B2 (ja) * | 2016-07-06 | 2020-01-15 | 信越半導体株式会社 | 発光素子及び発光素子の製造方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0442582A (ja) * | 1990-06-08 | 1992-02-13 | Eastman Kodak Japan Kk | 発光ダイオードアレイ |
| JPH0463478A (ja) * | 1990-07-03 | 1992-02-28 | Sanyo Electric Co Ltd | ＳｉＣ発光装置 |
| JPH0497575A (ja) * | 1990-08-14 | 1992-03-30 | Eastman Kodak Japan Kk | 発光ダイオードアレイ |
| JP3091327B2 (ja) * | 1992-08-26 | 2000-09-25 | 株式会社日立製作所 | 光伝送モジュール、光送受信回路および光伝送システム |
| JPH06318731A (ja) * | 1993-03-12 | 1994-11-15 | Sharp Corp | 半導体発光装置 |
| US5358880A (en) * | 1993-04-12 | 1994-10-25 | Motorola, Inc. | Method of manufacturing closed cavity LED |
| US5779924A (en) * | 1996-03-22 | 1998-07-14 | Hewlett-Packard Company | Ordered interface texturing for a light emitting device |
| EP0856202A2 (fr) * | 1996-06-11 | 1998-08-05 | Koninklijke Philips Electronics N.V. | Dispositifs emettant de la lumiere visible, y compris des diodes emettant de la lumiere ultraviolette et des elements fluorescents excitables par les ultraviolets et emettant de la lumiere visible et procede de production de tels dispositifs |
-
1999
- 1999-07-27 JP JP21213499A patent/JP5019664B2/ja not_active Expired - Lifetime
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