EP0856202A2 - Dispositifs emettant de la lumiere visible, y compris des diodes emettant de la lumiere ultraviolette et des elements fluorescents excitables par les ultraviolets et emettant de la lumiere visible et procede de production de tels dispositifs - Google Patents

Dispositifs emettant de la lumiere visible, y compris des diodes emettant de la lumiere ultraviolette et des elements fluorescents excitables par les ultraviolets et emettant de la lumiere visible et procede de production de tels dispositifs

Info

Publication number
EP0856202A2
EP0856202A2 EP97920917A EP97920917A EP0856202A2 EP 0856202 A2 EP0856202 A2 EP 0856202A2 EP 97920917 A EP97920917 A EP 97920917A EP 97920917 A EP97920917 A EP 97920917A EP 0856202 A2 EP0856202 A2 EP 0856202A2
Authority
EP
European Patent Office
Prior art keywords
light emitting
phosphor
layer
emitting device
leds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP97920917A
Other languages
German (de)
English (en)
Inventor
Piotr M. Mensz
Douglas A. Stanton
Nikhil Taskar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV, Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of EP0856202A2 publication Critical patent/EP0856202A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H01L33/105—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements

Abstract

On fabrique des affichages et des lampes émettant de la lumière au moyen d'un procédé de photopompage d'éléments fluorescents excitables par les ultraviolets par l'intermédiaire de diodes électroluminescentes (LED) à base de GaN émettant des ultraviolets. Des cavités résonantes sont incorporées dans les structures des LED, afin, à la fois, de rétrécir et d'élever le spectre d'émission. On fabrique des écrans d'affichage couleur à partir de groupements de combinaisons individuelles d'éléments luminescents et de LED de différentes couleurs. Ces dispositifs composés d'éléments fluorescents pompés et de LED ne nécessitent pas un milieu sous vide et fonctionnent à des tensions beaucoup plus basses que les écrans fluorescents pompés au faisceau d'électrons des tubes cathodiques (CRT).
EP97920917A 1996-06-11 1997-05-28 Dispositifs emettant de la lumiere visible, y compris des diodes emettant de la lumiere ultraviolette et des elements fluorescents excitables par les ultraviolets et emettant de la lumiere visible et procede de production de tels dispositifs Withdrawn EP0856202A2 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US66152096A 1996-06-11 1996-06-11
US661520 1996-06-11
PCT/IB1997/000606 WO1997048138A2 (fr) 1996-06-11 1997-05-28 Dispositifs emettant de la lumiere visible, y compris des diodes emettant de la lumiere ultraviolette et des elements fluorescents excitables par les ultraviolets et emettant de la lumiere visible et procede de production de tels dispositifs

Publications (1)

Publication Number Publication Date
EP0856202A2 true EP0856202A2 (fr) 1998-08-05

Family

ID=24653946

Family Applications (1)

Application Number Title Priority Date Filing Date
EP97920917A Withdrawn EP0856202A2 (fr) 1996-06-11 1997-05-28 Dispositifs emettant de la lumiere visible, y compris des diodes emettant de la lumiere ultraviolette et des elements fluorescents excitables par les ultraviolets et emettant de la lumiere visible et procede de production de tels dispositifs

Country Status (3)

Country Link
EP (1) EP0856202A2 (fr)
JP (1) JPH11510968A (fr)
WO (1) WO1997048138A2 (fr)

Families Citing this family (110)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2267801B1 (fr) 1996-06-26 2015-05-27 OSRAM Opto Semiconductors GmbH Puce à semi-conducteur luminescente et composant à semi-conducteur luminescent
DE19645035C1 (de) * 1996-10-31 1998-04-30 Siemens Ag Mehrfarbiges Licht abstrahlende Bildanzeigevorrichtung
US5895932A (en) * 1997-01-24 1999-04-20 International Business Machines Corporation Hybrid organic-inorganic semiconductor light emitting diodes
WO1998039805A1 (fr) * 1997-03-03 1998-09-11 Koninklijke Philips Electronics N.V. Diode emettant une lumiere blanche
US6340824B1 (en) * 1997-09-01 2002-01-22 Kabushiki Kaisha Toshiba Semiconductor light emitting device including a fluorescent material
US6252254B1 (en) 1998-02-06 2001-06-26 General Electric Company Light emitting device with phosphor composition
US6068383A (en) * 1998-03-02 2000-05-30 Robertson; Roger Phosphorous fluorescent light assembly excited by light emitting diodes
US5853960A (en) * 1998-03-18 1998-12-29 Trw Inc. Method for producing a micro optical semiconductor lens
US6396081B1 (en) 1998-06-30 2002-05-28 Osram Opto Semiconductor Gmbh & Co. Ohg Light source for generating a visible light
JP5019664B2 (ja) * 1998-07-28 2012-09-05 アイメック 高効率で光を発するデバイスおよびそのようなデバイスの製造方法
CN1227749C (zh) * 1998-09-28 2005-11-16 皇家菲利浦电子有限公司 照明系统
US6404125B1 (en) * 1998-10-21 2002-06-11 Sarnoff Corporation Method and apparatus for performing wavelength-conversion using phosphors with light emitting diodes
US6366018B1 (en) * 1998-10-21 2002-04-02 Sarnoff Corporation Apparatus for performing wavelength-conversion using phosphors with light emitting diodes
US6373188B1 (en) 1998-12-22 2002-04-16 Honeywell International Inc. Efficient solid-state light emitting device with excited phosphors for producing a visible light output
DE19902750A1 (de) * 1999-01-25 2000-08-03 Osram Opto Semiconductors Gmbh Halbleiterbauelement zur Erzeugung von mischfarbiger elektromagnetischer Strahlung
US6680569B2 (en) 1999-02-18 2004-01-20 Lumileds Lighting U.S. Llc Red-deficiency compensating phosphor light emitting device
US6351069B1 (en) 1999-02-18 2002-02-26 Lumileds Lighting, U.S., Llc Red-deficiency-compensating phosphor LED
US6329676B1 (en) * 1999-03-01 2001-12-11 Toru Takayama Flat panel solid state light source
WO2000054342A1 (fr) * 1999-03-10 2000-09-14 Nova Crystals, Inc. Del a base de nitrure a haute luminosite
JP3567790B2 (ja) 1999-03-31 2004-09-22 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子
US6686691B1 (en) 1999-09-27 2004-02-03 Lumileds Lighting, U.S., Llc Tri-color, white light LED lamps
US6696703B2 (en) 1999-09-27 2004-02-24 Lumileds Lighting U.S., Llc Thin film phosphor-converted light emitting diode device
JP2001111109A (ja) * 1999-10-07 2001-04-20 Sharp Corp 窒化ガリウム系化合物半導体発光素子
GB9924515D0 (en) * 1999-10-15 1999-12-15 Cambridge Display Tech Ltd Light-emitting devices
US6357889B1 (en) 1999-12-01 2002-03-19 General Electric Company Color tunable light source
US6513949B1 (en) * 1999-12-02 2003-02-04 Koninklijke Philips Electronics N.V. LED/phosphor-LED hybrid lighting systems
US6410942B1 (en) * 1999-12-03 2002-06-25 Cree Lighting Company Enhanced light extraction through the use of micro-LED arrays
US7319247B2 (en) * 2000-04-26 2008-01-15 Osram Gmbh Light emitting-diode chip and a method for producing same
CN1292494C (zh) 2000-04-26 2006-12-27 奥斯兰姆奥普托半导体有限责任公司 发光半导体元件及其制造方法
US6621211B1 (en) * 2000-05-15 2003-09-16 General Electric Company White light emitting phosphor blends for LED devices
CN1263168C (zh) 2000-06-29 2006-07-05 皇家菲利浦电子有限公司 光电元件和用发光层覆盖光电元件的方法
DE10036940A1 (de) 2000-07-28 2002-02-07 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Lumineszenz-Konversions-LED
DE10051159C2 (de) 2000-10-16 2002-09-19 Osram Opto Semiconductors Gmbh LED-Modul, z.B. Weißlichtquelle
JP4431925B2 (ja) * 2000-11-30 2010-03-17 信越半導体株式会社 発光素子の製造方法
JP2002170989A (ja) * 2000-12-04 2002-06-14 Sharp Corp 窒化物系化合物半導体発光素子
JP2002280607A (ja) * 2001-01-10 2002-09-27 Toyoda Gosei Co Ltd 発光装置
DE10112542B9 (de) 2001-03-15 2013-01-03 Osram Opto Semiconductors Gmbh Strahlungsemittierendes optisches Bauelement
JP4048954B2 (ja) 2001-04-20 2008-02-20 日亜化学工業株式会社 発光デバイス
US7091656B2 (en) 2001-04-20 2006-08-15 Nichia Corporation Light emitting device
US6642652B2 (en) 2001-06-11 2003-11-04 Lumileds Lighting U.S., Llc Phosphor-converted light emitting device
US6576488B2 (en) * 2001-06-11 2003-06-10 Lumileds Lighting U.S., Llc Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor
JP3956941B2 (ja) * 2001-06-15 2007-08-08 日亜化学工業株式会社 窒化物半導体発光素子及びそれを用いた発光装置
JP2003110146A (ja) * 2001-07-26 2003-04-11 Matsushita Electric Works Ltd 発光装置
DE10137042A1 (de) 2001-07-31 2003-02-20 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Planare Lichtquelle auf LED-Basis
DE20115914U1 (de) 2001-09-27 2003-02-13 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Beleuchtungseinheit mit mindestens einer LED als Lichtquelle
US7858403B2 (en) 2001-10-31 2010-12-28 Cree, Inc. Methods and systems for fabricating broad spectrum light emitting devices
JP4191937B2 (ja) * 2002-02-15 2008-12-03 株式会社日立製作所 白色光源及びそれを用いた画像表示装置
US6756186B2 (en) * 2002-03-22 2004-06-29 Lumileds Lighting U.S., Llc Producing self-aligned and self-exposed photoresist patterns on light emitting devices
JP2003282944A (ja) * 2002-03-26 2003-10-03 Shin Etsu Handotai Co Ltd 可視光発光装置
US6841802B2 (en) 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
DE10233050B4 (de) * 2002-07-19 2012-06-14 Osram Opto Semiconductors Gmbh Lichtquelle auf LED-Basis für die Erzeugung von Licht unter Ausnutzung des Farbmischprinzips
KR100499129B1 (ko) 2002-09-02 2005-07-04 삼성전기주식회사 발광 다이오드 및 그 제조방법
JP2004193393A (ja) * 2002-12-12 2004-07-08 Matsushita Electric Ind Co Ltd 複合発光素子
DE10261365B4 (de) * 2002-12-30 2006-09-28 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einer Mehrzahl von strahlungsemittierenden Halbleiterchips
US7091653B2 (en) 2003-01-27 2006-08-15 3M Innovative Properties Company Phosphor based light sources having a non-planar long pass reflector
JP2006516828A (ja) 2003-01-27 2006-07-06 スリーエム イノベイティブ プロパティズ カンパニー 蛍燐光体系光源素子および作製方法
US20040145289A1 (en) 2003-01-27 2004-07-29 3M Innovative Properties Company Phosphor based light sources having a non-planar short pass reflector and method of making
US7245072B2 (en) 2003-01-27 2007-07-17 3M Innovative Properties Company Phosphor based light sources having a polymeric long pass reflector
US7312560B2 (en) 2003-01-27 2007-12-25 3M Innovative Properties Phosphor based light sources having a non-planar long pass reflector and method of making
US7091661B2 (en) 2003-01-27 2006-08-15 3M Innovative Properties Company Phosphor based light sources having a reflective polarizer
US20040159900A1 (en) 2003-01-27 2004-08-19 3M Innovative Properties Company Phosphor based light sources having front illumination
US7118438B2 (en) 2003-01-27 2006-10-10 3M Innovative Properties Company Methods of making phosphor based light sources having an interference reflector
JP2004235546A (ja) * 2003-01-31 2004-08-19 Mitsubishi Chemicals Corp 発光装置及びそれを用いた照明装置並びにディスプレイ
US7125501B2 (en) 2003-04-21 2006-10-24 Sarnoff Corporation High efficiency alkaline earth metal thiogallate-based phosphors
US7368179B2 (en) 2003-04-21 2008-05-06 Sarnoff Corporation Methods and devices using high efficiency alkaline earth metal thiogallate-based phosphors
JP4699681B2 (ja) * 2003-06-27 2011-06-15 パナソニック株式会社 Ｌｅｄモジュール、および照明装置
WO2005022654A2 (fr) 2003-08-28 2005-03-10 Matsushita Electric Industrial Co.,Ltd. Dispositif electroluminescent a semiconducteur, module electroluminescent, appareil d'eclairage, element d'affichage et procede de fabrication du dispositif electroluminescent a semiconducteur
EP1670875B1 (fr) 2003-09-24 2019-08-14 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Systeme d'eclairage hautement efficace a base de diodes electroluminescentes presentant un meilleur rendu des couleurs
TWI344220B (en) 2003-09-24 2011-06-21 Osram Gmbh White emitting led with definite color-temperature
JP2005268601A (ja) * 2004-03-19 2005-09-29 Sumitomo Chemical Co Ltd 化合物半導体発光素子
DE102004040968A1 (de) * 2004-07-30 2006-03-23 Osram Opto Semiconductors Gmbh Lumineszenzdiode mit einer reflexionsmindernden Schichtenfolge
US7806541B2 (en) 2004-08-06 2010-10-05 Koninklijke Philips Electronics N.V. High performance LED lamp system
JP4817629B2 (ja) * 2004-09-15 2011-11-16 京セラ株式会社 発光素子およびその発光素子を用いた照明装置
DE102004060358A1 (de) * 2004-09-30 2006-04-13 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen von Lumineszenzdiodenchips und Lumineszenzdiodenchip
US20060078031A1 (en) * 2004-10-08 2006-04-13 Govorkov Sergei V InGaN LED pumped II-VI semiconductor laser
US7344902B2 (en) * 2004-11-15 2008-03-18 Philips Lumileds Lighting Company, Llc Overmolded lens over LED die
CN101073292A (zh) 2004-12-09 2007-11-14 皇家飞利浦电子股份有限公司 照明系统
US7609376B2 (en) * 2005-01-05 2009-10-27 Hewlett-Packard Development Company, L.P. Method and apparatus for pixel display and SERS analysis
JP4556122B2 (ja) 2005-01-27 2010-10-06 ソニー株式会社 情報処理装置および方法、並びに回収基板
JP4653671B2 (ja) 2005-03-14 2011-03-16 株式会社東芝 発光装置
DE102005022832A1 (de) 2005-05-11 2006-11-16 Arnold & Richter Cine Technik Gmbh & Co. Betriebs Kg Scheinwerfer für Film- und Videoaufnahmen
US7433627B2 (en) 2005-06-28 2008-10-07 Xerox Corporation Addressable irradiation of images
KR101256384B1 (ko) 2005-08-24 2013-04-25 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 조명 모듈
JP2007110090A (ja) * 2005-09-13 2007-04-26 Sony Corp ＧａＮ系半導体発光素子、発光装置、画像表示装置、面状光源装置、及び、液晶表示装置組立体
JP3863169B2 (ja) * 2005-10-03 2006-12-27 東芝電子エンジニアリング株式会社 発光装置
US8906262B2 (en) 2005-12-02 2014-12-09 Lightscape Materials, Inc. Metal silicate halide phosphors and LED lighting devices using the same
JP3863174B2 (ja) * 2006-05-08 2006-12-27 東芝電子エンジニアリング株式会社 発光装置
JP2008070865A (ja) * 2006-08-16 2008-03-27 Oki Data Corp 光走査型プロジェクタ装置
JP4536077B2 (ja) * 2007-03-01 2010-09-01 株式会社沖データ Ｌｅｄバックライト装置及び液晶表示装置
JP2008218691A (ja) 2007-03-05 2008-09-18 Oki Data Corp Ｌｅｄバックライト装置及び液晶表示装置
US8729573B2 (en) * 2007-07-26 2014-05-20 Panasonic Corporation LED lighting device
US20090046479A1 (en) * 2007-08-16 2009-02-19 Philips Lumileds Lighting Company, Llc Thin Backlight Using Low Profile Side Emitting LED
JP4381439B2 (ja) 2007-09-18 2009-12-09 株式会社沖データ Ｌｅｄバックライト装置及び液晶表示装置
DE102008019902A1 (de) * 2007-12-21 2009-06-25 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Herstellungsverfahren für ein optoelektronisches Bauelement
JP4911082B2 (ja) * 2008-03-10 2012-04-04 ソニー株式会社 表示装置および照明装置
KR101506264B1 (ko) 2008-06-13 2015-03-30 삼성전자주식회사 발광 소자, 발광 장치 및 상기 발광 소자의 제조 방법
US7955875B2 (en) 2008-09-26 2011-06-07 Cree, Inc. Forming light emitting devices including custom wavelength conversion structures
DE102011015726B9 (de) 2011-03-31 2023-07-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip, Display mit einer Mehrzahl von Halbleiterchips und Verfahren zu deren Herstellung
JP2013098427A (ja) * 2011-11-02 2013-05-20 Citizen Electronics Co Ltd 半導体発光装置
KR101981119B1 (ko) * 2011-11-25 2019-05-22 엘지이노텍 주식회사 자외선 반도체 발광 소자
DE102012106859B4 (de) * 2012-07-27 2019-01-03 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines mehrfarbigen LED-Displays
US9240528B2 (en) 2013-10-03 2016-01-19 Cree, Inc. Solid state lighting apparatus with high scotopic/photopic (S/P) ratio
JP6397298B2 (ja) * 2014-10-06 2018-09-26 日本放送協会 発光素子
CN106410006B (zh) * 2016-06-22 2018-08-17 厦门乾照光电股份有限公司 一种集成可见光指示装置的紫外发光二极管及其生产方法
JP2019096663A (ja) 2017-11-20 2019-06-20 ソニー株式会社 発光装置および表示装置
US11749786B2 (en) 2019-10-15 2023-09-05 Lumileds Llc Multicolor phosphor-converted LED array
US11063191B2 (en) 2019-10-15 2021-07-13 Lumileds Llc Forming a multicolor phosphor-converted LED array
WO2021076724A1 (fr) * 2019-10-15 2021-04-22 Lumileds Llc Formation d'un réseau de del converti au phosphore multicolore
US11777059B2 (en) 2019-11-20 2023-10-03 Lumileds Llc Pixelated light-emitting diode for self-aligned photoresist patterning
US11628234B2 (en) 2020-06-01 2023-04-18 Know Labs, Inc. White light LED light bulbs for ambient lighting and pathogen inactivation

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3593055A (en) * 1969-04-16 1971-07-13 Bell Telephone Labor Inc Electro-luminescent device
GB2118803B (en) * 1982-04-05 1987-02-18 British Broadcasting Corp Display device
JP2755650B2 (ja) * 1989-02-01 1998-05-20 株式会社東芝 露光装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO9748138A2 *

Also Published As

Publication number Publication date
JPH11510968A (ja) 1999-09-21
WO1997048138A2 (fr) 1997-12-18
WO1997048138A3 (fr) 1998-02-19

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