JP2000082840A5 - - Google Patents

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Publication number
JP2000082840A5
JP2000082840A5 JP1999072005A JP7200599A JP2000082840A5 JP 2000082840 A5 JP2000082840 A5 JP 2000082840A5 JP 1999072005 A JP1999072005 A JP 1999072005A JP 7200599 A JP7200599 A JP 7200599A JP 2000082840 A5 JP2000082840 A5 JP 2000082840A5
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JP
Japan
Prior art keywords
becomes large
irradiated
signal light
present
detection sensitivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1999072005A
Other languages
English (en)
Japanese (ja)
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JP4220058B2 (ja
JP2000082840A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP07200599A external-priority patent/JP4220058B2/ja
Priority to JP07200599A priority Critical patent/JP4220058B2/ja
Priority to EP99957665A priority patent/EP1113504A4/en
Priority to PCT/JP1999/003445 priority patent/WO2000001018A1/ja
Priority to TW088110895A priority patent/TW417310B/zh
Priority to AU42901/99A priority patent/AU4290199A/en
Priority to KR1020007015059A priority patent/KR100564348B1/ko
Priority to CNB998081493A priority patent/CN100356588C/zh
Publication of JP2000082840A publication Critical patent/JP2000082840A/ja
Priority to US09/749,736 priority patent/US6459109B2/en
Publication of JP2000082840A5 publication Critical patent/JP2000082840A5/ja
Publication of JP4220058B2 publication Critical patent/JP4220058B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP07200599A 1998-06-30 1999-03-17 半導体位置検出器 Expired - Fee Related JP4220058B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP07200599A JP4220058B2 (ja) 1998-06-30 1999-03-17 半導体位置検出器
CNB998081493A CN100356588C (zh) 1998-06-30 1999-06-28 半导体位置探测器
PCT/JP1999/003445 WO2000001018A1 (en) 1998-06-30 1999-06-28 Semiconductor position sensor
TW088110895A TW417310B (en) 1998-06-30 1999-06-28 A semiconductor position detector
AU42901/99A AU4290199A (en) 1998-06-30 1999-06-28 Semiconductor position sensor
KR1020007015059A KR100564348B1 (ko) 1998-06-30 1999-06-28 반도체 위치 검출기
EP99957665A EP1113504A4 (en) 1998-06-30 1999-06-28 SEMICONDUCTOR LOCATOR
US09/749,736 US6459109B2 (en) 1998-06-30 2000-12-28 Semiconductor position sensor

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10-184643 1998-06-30
JP18464398 1998-06-30
JP07200599A JP4220058B2 (ja) 1998-06-30 1999-03-17 半導体位置検出器

Publications (3)

Publication Number Publication Date
JP2000082840A JP2000082840A (ja) 2000-03-21
JP2000082840A5 true JP2000082840A5 (https=) 2006-02-23
JP4220058B2 JP4220058B2 (ja) 2009-02-04

Family

ID=26413134

Family Applications (1)

Application Number Title Priority Date Filing Date
JP07200599A Expired - Fee Related JP4220058B2 (ja) 1998-06-30 1999-03-17 半導体位置検出器

Country Status (8)

Country Link
US (1) US6459109B2 (https=)
EP (1) EP1113504A4 (https=)
JP (1) JP4220058B2 (https=)
KR (1) KR100564348B1 (https=)
CN (1) CN100356588C (https=)
AU (1) AU4290199A (https=)
TW (1) TW417310B (https=)
WO (1) WO2000001018A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001068724A (ja) * 1999-08-25 2001-03-16 Hamamatsu Photonics Kk 測距装置
US8144156B1 (en) * 2003-12-31 2012-03-27 Zii Labs Inc. Ltd. Sequencer with async SIMD array
US7768085B2 (en) * 2005-10-11 2010-08-03 Icemos Technology Ltd. Photodetector array using isolation diffusions as crosstalk inhibitors between adjacent photodiodes
USD554084S1 (en) * 2005-10-31 2007-10-30 Kabushiki Kaisha Toshiba Portion of a semiconductor apparatus mounting-position accuracy measurement jig
DE102006013460B3 (de) 2006-03-23 2007-11-08 Prüftechnik Dieter Busch AG Photodetektoranordnung, Messanordnung mit einer Photodetektoranordnung und Verfahren zum Betrieb einer Messanordnung
DE102006013461B3 (de) 2006-03-23 2007-11-15 Prüftechnik Dieter Busch AG Photodetektoranordnung, Messanordnung mit einer Photodetektoranordnung und Verfahren zum Betrieb einer Messanordnung
EP2155248B1 (en) * 2007-04-12 2015-06-10 The Brigham and Women's Hospital, Inc. Targeting abcb5 for cancer therapy
US7605361B2 (en) * 2007-07-09 2009-10-20 Denso Corporation Fuel property detection device
CA3001382C (en) * 2008-02-14 2020-10-27 Spiracur Inc. Devices and methods for treatment of damaged tissue
CN112838021B (zh) * 2020-12-31 2023-07-18 杭州广立微电子股份有限公司 一种判断器件与切断层相对位置的方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8501489A (nl) * 1985-05-24 1986-12-16 Philips Nv Positie-gevoelige stralingsdetector.
DE3728691A1 (de) * 1986-08-28 1988-03-10 Nissan Motor Lichtempfindlicher positionssensor
JPH0783134B2 (ja) * 1987-07-31 1995-09-06 松下電子工業株式会社 光電変換装置
JP2658175B2 (ja) * 1988-05-16 1997-09-30 日産自動車株式会社 半導体位置センサ
JP2717839B2 (ja) * 1989-03-20 1998-02-25 松下電子工業株式会社 光半導体装置
US4887140A (en) * 1989-04-27 1989-12-12 Board Of Regents, The Univ. Of Texas System Clover design lateral effect position-sensitive device
JPH0766983B2 (ja) * 1990-04-27 1995-07-19 新日本製鐵株式会社 光位置検出用半導体装置
JPH0513808A (ja) * 1990-12-18 1993-01-22 Hamamatsu Photonics Kk 二次元光位置検出素子
JP2931122B2 (ja) * 1991-04-11 1999-08-09 浜松ホトニクス株式会社 一次元光位置検出素子
US5561287A (en) * 1994-09-30 1996-10-01 Board Of Regents Of The University Of Colorado Dual photodetector for determining peak intensity of pixels in an array using a winner take all photodiode intensity circuit and a lateral effect transistor pad position circuit
JPH1012856A (ja) * 1996-06-27 1998-01-16 Olympus Optical Co Ltd 位置検知センサ

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