JP2000036568A - 半導体記憶装置及びその製造方法 - Google Patents

半導体記憶装置及びその製造方法

Info

Publication number
JP2000036568A
JP2000036568A JP10202979A JP20297998A JP2000036568A JP 2000036568 A JP2000036568 A JP 2000036568A JP 10202979 A JP10202979 A JP 10202979A JP 20297998 A JP20297998 A JP 20297998A JP 2000036568 A JP2000036568 A JP 2000036568A
Authority
JP
Japan
Prior art keywords
wiring layer
film
layer
memory device
contact hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10202979A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000036568A5 (enExample
Inventor
Susumu Shudo
藤 晋 首
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP10202979A priority Critical patent/JP2000036568A/ja
Priority to US09/354,101 priority patent/US6313491B1/en
Publication of JP2000036568A publication Critical patent/JP2000036568A/ja
Publication of JP2000036568A5 publication Critical patent/JP2000036568A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP10202979A 1998-07-17 1998-07-17 半導体記憶装置及びその製造方法 Pending JP2000036568A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP10202979A JP2000036568A (ja) 1998-07-17 1998-07-17 半導体記憶装置及びその製造方法
US09/354,101 US6313491B1 (en) 1998-07-17 1999-07-15 Semiconductor memory having cell including transistor and ferroelectric capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10202979A JP2000036568A (ja) 1998-07-17 1998-07-17 半導体記憶装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2000036568A true JP2000036568A (ja) 2000-02-02
JP2000036568A5 JP2000036568A5 (enExample) 2005-07-07

Family

ID=16466330

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10202979A Pending JP2000036568A (ja) 1998-07-17 1998-07-17 半導体記憶装置及びその製造方法

Country Status (2)

Country Link
US (1) US6313491B1 (enExample)
JP (1) JP2000036568A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030002061A (ko) * 2001-06-30 2003-01-08 주식회사 하이닉스반도체 강유전체 메모리 소자 및 제조방법
US6911686B1 (en) 1999-06-17 2005-06-28 Fujitsu Limited Semiconductor memory device having planarized upper surface and a SiON moisture barrier
US6944007B2 (en) 2003-12-01 2005-09-13 Kabushiki Kaisha Toshiba Capacitor structure
JP2007095898A (ja) * 2005-09-28 2007-04-12 Toshiba Corp 半導体記憶装置及びその製造方法
KR100727442B1 (ko) * 2000-06-19 2007-06-13 후지쯔 가부시끼가이샤 반도체 장치 및 그 제조 방법
US20220416011A1 (en) * 2021-06-23 2022-12-29 Mediatek Singapore Pte. Ltd. Capacitor structure
CN115915756A (zh) * 2022-11-23 2023-04-04 长鑫存储技术有限公司 半导体结构的制备方法、半导体结构和半导体存储器

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6498364B1 (en) * 2000-01-21 2002-12-24 Agere Systems Inc. Capacitor for integration with copper damascene processes
JP3915868B2 (ja) * 2000-07-07 2007-05-16 セイコーエプソン株式会社 強誘電体メモリ装置およびその製造方法
US7271489B2 (en) 2003-10-15 2007-09-18 Megica Corporation Post passivation interconnection schemes on top of the IC chips
JP3833887B2 (ja) * 2000-10-30 2006-10-18 株式会社東芝 強誘電体メモリ及びその製造方法
US6504203B2 (en) * 2001-02-16 2003-01-07 International Business Machines Corporation Method of forming a metal-insulator-metal capacitor for dual damascene interconnect processing and the device so formed
US6399975B1 (en) * 2001-03-07 2002-06-04 Megic Corporation Wide bit memory using post passivation interconnection scheme
JP2003051501A (ja) * 2001-05-30 2003-02-21 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2003152165A (ja) * 2001-11-15 2003-05-23 Fujitsu Ltd 半導体装置およびその製造方法
US20030124324A1 (en) * 2001-11-27 2003-07-03 Kappler Safety Group Breathable blood and viral barrier fabric
JP3961994B2 (ja) * 2003-07-28 2007-08-22 株式会社東芝 半導体記憶装置
JP2006041365A (ja) * 2004-07-29 2006-02-09 Toshiba Corp 半導体記憶装置とその製造方法
CN102157494B (zh) 2005-07-22 2013-05-01 米辑电子股份有限公司 线路组件
JP4301227B2 (ja) * 2005-09-15 2009-07-22 セイコーエプソン株式会社 電気光学装置及びその製造方法、電子機器並びにコンデンサー
KR20080062024A (ko) * 2006-12-29 2008-07-03 동부일렉트로닉스 주식회사 반도체 소자의 제조 방법 및 그 구조
JP2009205752A (ja) * 2008-02-28 2009-09-10 Toshiba Corp 強誘電体記憶装置
US8395196B2 (en) 2010-11-16 2013-03-12 International Business Machines Corporation Hydrogen barrier liner for ferro-electric random access memory (FRAM) chip

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3169599B2 (ja) * 1990-08-03 2001-05-28 株式会社日立製作所 半導体装置、その駆動方法、その読み出し方法
US6004839A (en) * 1996-01-17 1999-12-21 Nec Corporation Semiconductor device with conductive plugs
KR100207459B1 (ko) * 1996-02-21 1999-07-15 윤종용 강유전체 메모리 장치 및 그 제조 방법
KR100197566B1 (ko) * 1996-06-29 1999-06-15 윤종용 강유전체 메모리 장치
US5990507A (en) * 1996-07-09 1999-11-23 Kabushiki Kaisha Toshiba Semiconductor device having ferroelectric capacitor structures
JP3215345B2 (ja) * 1997-03-19 2001-10-02 富士通株式会社 半導体装置の製造方法
US6090697A (en) * 1997-06-30 2000-07-18 Texas Instruments Incorporated Etchstop for integrated circuits
JP2000031398A (ja) * 1998-07-15 2000-01-28 Toshiba Corp 半導体装置及びその製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6911686B1 (en) 1999-06-17 2005-06-28 Fujitsu Limited Semiconductor memory device having planarized upper surface and a SiON moisture barrier
US7074625B2 (en) 1999-06-17 2006-07-11 Fujitsu Limited Semiconductor device and method of manufacturing the same
KR100727442B1 (ko) * 2000-06-19 2007-06-13 후지쯔 가부시끼가이샤 반도체 장치 및 그 제조 방법
KR20030002061A (ko) * 2001-06-30 2003-01-08 주식회사 하이닉스반도체 강유전체 메모리 소자 및 제조방법
US6944007B2 (en) 2003-12-01 2005-09-13 Kabushiki Kaisha Toshiba Capacitor structure
JP2007095898A (ja) * 2005-09-28 2007-04-12 Toshiba Corp 半導体記憶装置及びその製造方法
US20220416011A1 (en) * 2021-06-23 2022-12-29 Mediatek Singapore Pte. Ltd. Capacitor structure
CN115915756A (zh) * 2022-11-23 2023-04-04 长鑫存储技术有限公司 半导体结构的制备方法、半导体结构和半导体存储器

Also Published As

Publication number Publication date
US6313491B1 (en) 2001-11-06

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