JP2000031164A5 - - Google Patents
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- Publication number
- JP2000031164A5 JP2000031164A5 JP1998193125A JP19312598A JP2000031164A5 JP 2000031164 A5 JP2000031164 A5 JP 2000031164A5 JP 1998193125 A JP1998193125 A JP 1998193125A JP 19312598 A JP19312598 A JP 19312598A JP 2000031164 A5 JP2000031164 A5 JP 2000031164A5
- Authority
- JP
- Japan
- Prior art keywords
- group
- iii
- nitride semiconductor
- buffer layer
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims 13
- 239000004065 semiconductor Substances 0.000 claims 12
- 150000004767 nitrides Chemical class 0.000 claims 10
- 239000000758 substrate Substances 0.000 claims 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 4
- 229910052796 boron Inorganic materials 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- 229910052698 phosphorus Inorganic materials 0.000 claims 4
- 239000011574 phosphorus Substances 0.000 claims 4
- 229910004261 CaF 2 Inorganic materials 0.000 claims 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 2
- FFBGYFUYJVKRNV-UHFFFAOYSA-N boranylidynephosphane Chemical compound P#B FFBGYFUYJVKRNV-UHFFFAOYSA-N 0.000 claims 2
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims 2
- 229910001634 calcium fluoride Inorganic materials 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- 239000000470 constituent Substances 0.000 claims 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 2
- 239000007772 electrode material Substances 0.000 claims 2
- 229910052733 gallium Inorganic materials 0.000 claims 2
- 229910021478 group 5 element Inorganic materials 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- SRCJDTOFMBRRBY-UHFFFAOYSA-N boron indium Chemical compound [B].[In] SRCJDTOFMBRRBY-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19312598A JP3982070B2 (ja) | 1998-07-08 | 1998-07-08 | Ｉｉｉ族窒化物半導体ｆｅｔ及びその製造方法 |
| US09/270,749 US6069021A (en) | 1997-05-14 | 1999-03-17 | Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19312598A JP3982070B2 (ja) | 1998-07-08 | 1998-07-08 | Ｉｉｉ族窒化物半導体ｆｅｔ及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000031164A JP2000031164A (ja) | 2000-01-28 |
| JP2000031164A5 true JP2000031164A5 (enExample) | 2005-07-07 |
| JP3982070B2 JP3982070B2 (ja) | 2007-09-26 |
Family
ID=16302690
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19312598A Expired - Lifetime JP3982070B2 (ja) | 1997-05-14 | 1998-07-08 | Ｉｉｉ族窒化物半導体ｆｅｔ及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3982070B2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000277724A (ja) * | 1999-03-26 | 2000-10-06 | Nagoya Kogyo Univ | 電界効果トランジスタとそれを備えた半導体装置及びその製造方法 |
| US6787814B2 (en) | 2000-06-22 | 2004-09-07 | Showa Denko Kabushiki Kaisha | Group-III nitride semiconductor light-emitting device and production method thereof |
| US7018728B2 (en) | 2001-12-14 | 2006-03-28 | Showa Denko K.K. | Boron phosphide-based semiconductor device and production method thereof |
| JP5773035B2 (ja) * | 2014-06-04 | 2015-09-02 | 富士通株式会社 | 化合物半導体装置 |
-
1998
- 1998-07-08 JP JP19312598A patent/JP3982070B2/ja not_active Expired - Lifetime
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