JP2000031164A5 - - Google Patents

Claims (9)

A single crystal substrate made of insulating calcium fluoride (chemical formula: CaF ₂ ) and at least boron (element symbol: B) and phosphorus (element symbol: P) formed on the single crystal substrate are included as constituent elements A buffer layer and a general formula AlαGaβIn _1- α _- βN _1- γMγ (0 ≦ α, β ≦ 1, 0 ≦ α + β ≦ 1, symbol formed on the single crystal substrate via the buffer layer; M represents a group V element other than nitrogen, and a group III nitride semiconductor device comprising an active layer composed of an aluminum nitride, gallium, and indium crystal layer represented by 0 ≦ γ <1). The buffer layer has a content of boron phosphide multimer crystals (B _X P _Y , where X ≧ 6 and Y = 1 or 2) composed of boron (B) atoms and phosphorus (P) atoms, at most 1/20. The group III nitride semiconductor device according to claim 1, wherein the group III nitride semiconductor device is composed of a BP III-V compound semiconductor crystal. The buffer layer is, boron indium phosphide crystal _{(B a In 1-a P} , where 0 <a <0.62) III nitride semiconductor device according to claim 1 or 2, characterized in that it consists of . Insulating calcium fluoride (chemical formula: CaF ₂ A buffer layer containing at least boron (element symbol: B) and phosphorus (element symbol: P) as constituent elements is formed on a single crystal substrate made of), and a general formula AlαGaβIn is formed thereon. _1- α _- βN _1- Activity comprising an aluminum nitride / gallium / indium crystal layer represented by γMγ (0 ≦ α, β ≦ 1, 0 ≦ α + β ≦ 1, symbol M represents a group V element other than nitrogen, and 0 ≦ γ <1) Characterized by forming a layer III A method for manufacturing a group nitride semiconductor device. The buffer layer is formed of boron phosphide multimer crystals (B) composed of boron (B) atoms and phosphorus (P) atoms. _X P _Y However, BP system in which the content of X ≧ 6 and Y = 1 or 2) is 1/20 or less III It is comprised from a -V group compound semiconductor crystal. III A method for manufacturing a group nitride semiconductor device. The film formation temperature of the buffer layer is about 300 ° C. or higher and about 500 ° C. or lower. III A method for manufacturing a group nitride semiconductor device. 7. The thickness according to claim 4, wherein the buffer layer has a thickness of 500 mm or less. III A method for manufacturing a group nitride semiconductor device. The buffer layer comprises a layer composed of a single crystal in a region near the interface with the single crystal substrate, and a layer mainly composed of an amorphous material disposed in a region above the buffer layer. The group III nitride semiconductor device according to any one of claims 1 to 3. Claim 8 III A FET in which a source and drain electrode made of an ohmic electrode material and a gate electrode made of a Schottky electrode material are provided on a group nitride semiconductor element.