JP3982070B2 - Ｉｉｉ族窒化物半導体ｆｅｔ及びその製造方法 - Google Patents

Ｉｉｉ族窒化物半導体ｆｅｔ及びその製造方法 Download PDF

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Publication number
JP3982070B2
JP3982070B2 JP19312598A JP19312598A JP3982070B2 JP 3982070 B2 JP3982070 B2 JP 3982070B2 JP 19312598 A JP19312598 A JP 19312598A JP 19312598 A JP19312598 A JP 19312598A JP 3982070 B2 JP3982070 B2 JP 3982070B2
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Japan
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layer
crystal
buffer layer
boron
nitride semiconductor
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JP19312598A
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Japanese (ja)
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JP2000031164A (ja
JP2000031164A5 (enExample
Inventor
一高 寺嶋
隆 宇田川
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Resonac Holdings Corp
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Showa Denko KK
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Priority to JP19312598A priority Critical patent/JP3982070B2/ja
Priority to US09/270,749 priority patent/US6069021A/en
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Publication of JP2000031164A5 publication Critical patent/JP2000031164A5/ja
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JP19312598A 1997-05-14 1998-07-08 Ｉｉｉ族窒化物半導体ｆｅｔ及びその製造方法 Expired - Lifetime JP3982070B2 (ja)

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Application Number Priority Date Filing Date Title
JP19312598A JP3982070B2 (ja) 1998-07-08 1998-07-08 Ｉｉｉ族窒化物半導体ｆｅｔ及びその製造方法
US09/270,749 US6069021A (en) 1997-05-14 1999-03-17 Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer

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Application Number Priority Date Filing Date Title
JP19312598A JP3982070B2 (ja) 1998-07-08 1998-07-08 Ｉｉｉ族窒化物半導体ｆｅｔ及びその製造方法

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JP2000031164A JP2000031164A (ja) 2000-01-28
JP2000031164A5 JP2000031164A5 (enExample) 2005-07-07
JP3982070B2 true JP3982070B2 (ja) 2007-09-26

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JP19312598A Expired - Lifetime JP3982070B2 (ja) 1997-05-14 1998-07-08 Ｉｉｉ族窒化物半導体ｆｅｔ及びその製造方法

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000277724A (ja) * 1999-03-26 2000-10-06 Nagoya Kogyo Univ 電界効果トランジスタとそれを備えた半導体装置及びその製造方法
US6787814B2 (en) 2000-06-22 2004-09-07 Showa Denko Kabushiki Kaisha Group-III nitride semiconductor light-emitting device and production method thereof
US7018728B2 (en) 2001-12-14 2006-03-28 Showa Denko K.K. Boron phosphide-based semiconductor device and production method thereof
JP5773035B2 (ja) * 2014-06-04 2015-09-02 富士通株式会社 化合物半導体装置

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