JP2000030594A5 - - Google Patents

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Publication number
JP2000030594A5
JP2000030594A5 JP1999154477A JP15447799A JP2000030594A5 JP 2000030594 A5 JP2000030594 A5 JP 2000030594A5 JP 1999154477 A JP1999154477 A JP 1999154477A JP 15447799 A JP15447799 A JP 15447799A JP 2000030594 A5 JP2000030594 A5 JP 2000030594A5
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JP
Japan
Prior art keywords
acoustic
substrate
layers
acoustic mirror
mirror structure
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Pending
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JP1999154477A
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JP2000030594A (ja
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Priority claimed from FI981245A external-priority patent/FI106894B/fi
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Publication of JP2000030594A publication Critical patent/JP2000030594A/ja
Publication of JP2000030594A5 publication Critical patent/JP2000030594A5/ja
Pending legal-status Critical Current

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Description

圧電層は、例えば、ZnO、AlN、ZnS、或いはその他の、薄膜として作ることのできる任意の圧電材料である。別の例として、強誘電性セラミックスを圧電材料として使うことができる。例えば、PbTiO 3 及びPb(Zr x Ti l-x )O 3 及びその他のいわゆるランタンジルコニウム酸チタン酸鉛族に属する物質を使うことができる。
ＢＡＷ共振器を基板から絶縁する別の方法は、音響ミラー構造を使用する。音響ミラー構造は、音波を共振器構造へ反射して返すことにより絶縁を実行する。音響ミラーは、通常、中心周波数での四分の一波長の厚みを有する数個の層から成り、交互の層が異なる音響インピーダンスを持っている。音響ミラーの層の個数は、通常は３から９の範囲の奇数である。基板材料の割合に高いインピーダンスの代わりに、なるべく低い音響インピーダンスをＢＡＷ共振器に与えるために、連続する２つの層の音響インピーダンスの比は大きい方がよい。高インピーダンス層の材料は例えば金（Au）、モリブデン（Mo）、或いはタングステン（W）であり、低インピーダンス層の材料は例えばケイ素（Si）、ポリシリコン（poly-Si）、二酸化珪素（SiO 2 ）、アルミニウム（Al）、或いはポリマーである。音響ミラー構造を利用する構造では共振器は基板から絶縁され、基板は大幅には修正されないので、広範な材料を基板として使うことができる。
JP11154477A 1998-06-02 1999-06-02 共振器の構造 Pending JP2000030594A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI981245A FI106894B (fi) 1998-06-02 1998-06-02 Resonaattorirakenteita
FI981245 1998-06-02

Publications (2)

Publication Number Publication Date
JP2000030594A JP2000030594A (ja) 2000-01-28
JP2000030594A5 true JP2000030594A5 (ja) 2006-06-22

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JP11154477A Pending JP2000030594A (ja) 1998-06-02 1999-06-02 共振器の構造

Country Status (5)

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US (1) US6242843B1 (ja)
EP (2) EP0962999A3 (ja)
JP (1) JP2000030594A (ja)
CN (1) CN1130790C (ja)
FI (1) FI106894B (ja)

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