JP2000029215A - 新規なポリマー及びフォトレジスト組成物 - Google Patents

新規なポリマー及びフォトレジスト組成物

Info

Publication number
JP2000029215A
JP2000029215A JP9291498A JP29149897A JP2000029215A JP 2000029215 A JP2000029215 A JP 2000029215A JP 9291498 A JP9291498 A JP 9291498A JP 29149897 A JP29149897 A JP 29149897A JP 2000029215 A JP2000029215 A JP 2000029215A
Authority
JP
Japan
Prior art keywords
substituted
group
unsubstituted
polymer
photoresist composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9291498A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000029215A5 (https=
Inventor
Uday Kumar
クマール ユーデイ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials International LLC
Original Assignee
Shipley Co LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shipley Co LLC filed Critical Shipley Co LLC
Publication of JP2000029215A publication Critical patent/JP2000029215A/ja
Publication of JP2000029215A5 publication Critical patent/JP2000029215A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Polymerisation Methods In General (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
JP9291498A 1996-09-13 1997-09-16 新規なポリマー及びフォトレジスト組成物 Pending JP2000029215A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/706,138 US6090526A (en) 1996-09-13 1996-09-13 Polymers and photoresist compositions
US706138 1996-09-13

Publications (2)

Publication Number Publication Date
JP2000029215A true JP2000029215A (ja) 2000-01-28
JP2000029215A5 JP2000029215A5 (https=) 2005-06-09

Family

ID=24836361

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9291498A Pending JP2000029215A (ja) 1996-09-13 1997-09-16 新規なポリマー及びフォトレジスト組成物

Country Status (5)

Country Link
US (1) US6090526A (https=)
EP (1) EP0829766B1 (https=)
JP (1) JP2000029215A (https=)
KR (1) KR19980024654A (https=)
DE (1) DE69718974T2 (https=)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000122296A (ja) * 1998-08-04 2000-04-28 Shipley Co Llc フォトレジスト組成物、その方法及びそれらを含有してなる工業製品
JP2002311587A (ja) * 2001-04-10 2002-10-23 Fujitsu Ltd 化学増幅レジスト組成物及びそれを用いたパターン形成方法
WO2004081065A1 (ja) * 2003-03-10 2004-09-23 Mitsui Chemicals, Inc. 酸感応性共重合体およびその用途
KR100537964B1 (ko) * 2001-07-09 2005-12-21 미쯔이가가꾸가부시끼가이샤 포지티브형 감광성 레지스트 조성물 및 그의 용도
JP2006003861A (ja) * 2004-05-19 2006-01-05 Mitsui Chemicals Inc ポジ型感光性レジスト組成物およびその製造方法
JP2006219555A (ja) * 2005-02-09 2006-08-24 Tokyo Ohka Kogyo Co Ltd 高分子化合物、ポジ型レジスト組成物およびレジストパターン形成方法
JP2014041327A (ja) * 2012-07-27 2014-03-06 Fujifilm Corp 感活性光線性又は感放射線性樹脂組成物、それを用いたレジスト膜、パターン形成方法、電子デバイスの製造方法、及び電子デバイス
US9291896B2 (en) 2012-07-27 2016-03-22 Fujifilm Corporation Actinic ray-sensitive or radiation-sensitive resin composition, resist film using the same, pattern forming method, manufacturing method of electronic device, and electronic device
US9291898B2 (en) 2012-07-27 2016-03-22 Fujifilm Corporation Actinic ray-sensitive or radiation-sensitive resin composition, resist film using the same, pattern forming method, manufacturing method of electronic device, electronic device and resin
KR20210012905A (ko) 2019-07-25 2021-02-03 마루젠 세끼유가가꾸 가부시키가이샤 산분해성 수지의 제조 방법

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6207353B1 (en) * 1997-12-10 2001-03-27 International Business Machines Corporation Resist formulation which minimizes blistering during etching
SG78412A1 (en) 1999-03-31 2001-02-20 Ciba Sc Holding Ag Oxime derivatives and the use thereof as latent acids
KR100604780B1 (ko) * 1999-07-23 2006-07-28 삼성전자주식회사 백본에 지환식 화합물과 아세탈 작용기를 가지는 감광성 폴리머와 이를 포함하는 감광성 코폴리머
WO2001055789A2 (en) * 2000-01-25 2001-08-02 Infineon Technologies Ag Chemically amplified short wavelength resist
KR20010082831A (ko) * 2000-02-21 2001-08-31 구본준, 론 위라하디락사 액정표시장치의 제조방법
US20020037472A1 (en) * 2000-09-08 2002-03-28 Shipley Company, L.L.C. Novel polymers and photoresist compositions comprising labile polymer backbones for short wave imaging
US6749987B2 (en) * 2000-10-20 2004-06-15 Fuji Photo Film Co., Ltd. Positive photosensitive composition
JP4498690B2 (ja) * 2002-05-30 2010-07-07 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 新規樹脂およびそれを含有するフォトレジスト組成物
JP3844069B2 (ja) * 2002-07-04 2006-11-08 信越化学工業株式会社 レジスト材料及びパターン形成方法
US7892903B2 (en) * 2004-02-23 2011-02-22 Asml Netherlands B.V. Device manufacturing method and substrate comprising multiple resist layers
KR101031693B1 (ko) 2004-06-18 2011-04-29 엘지디스플레이 주식회사 패턴형성용 레지스트 및 이를 이용한 패턴형성방법
JP4989047B2 (ja) 2004-07-02 2012-08-01 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 浸漬リソグラフィ用の組成物及びプロセス
US7183036B2 (en) * 2004-11-12 2007-02-27 International Business Machines Corporation Low activation energy positive resist
JP4789599B2 (ja) 2004-12-06 2011-10-12 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． フォトレジスト組成物
EP1691238A3 (en) * 2005-02-05 2009-01-21 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for use with an overcoated photoresist
EP1762895B1 (en) 2005-08-29 2016-02-24 Rohm and Haas Electronic Materials, L.L.C. Antireflective Hard Mask Compositions
JP2007133208A (ja) * 2005-11-11 2007-05-31 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物およびレジストパターン形成方法
EP1829942B1 (en) 2006-02-28 2012-09-26 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for use with an overcoated photoresist
TWI485064B (zh) 2006-03-10 2015-05-21 羅門哈斯電子材料有限公司 用於光微影之組成物及製程
TWI475323B (zh) * 2006-03-14 2015-03-01 Fujifilm Corp 正型光阻組成物及使用它之圖案形成方法
KR101186689B1 (ko) 2006-10-30 2012-09-27 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨. 침지 리소그래피 처리용 조성물 및 방법
TWI374478B (en) 2007-02-13 2012-10-11 Rohm & Haas Elect Mat Electronic device manufacture
EP1998222B1 (en) 2007-04-06 2013-03-20 Rohm and Haas Electronic Materials LLC Coating compositions
EP2056162B1 (en) 2007-11-05 2016-05-04 Rohm and Haas Electronic Materials LLC Process for immersion lithography
EP2071400A1 (en) 2007-11-12 2009-06-17 Rohm and Haas Electronic Materials LLC Coating compositions for use with an overcoated photoresist
EP2189845B1 (en) 2008-11-19 2017-08-02 Rohm and Haas Electronic Materials LLC Compositions and processes for photolithography
EP3051348A1 (en) 2008-11-19 2016-08-03 Rohm and Haas Electronic Materials LLC Compositions comprising hetero-substituted carbocyclic aryl component and processes for photolithography
EP2189846B1 (en) 2008-11-19 2015-04-22 Rohm and Haas Electronic Materials LLC Process for photolithography applying a photoresist composition comprising a block copolymer
EP2189844A3 (en) 2008-11-19 2010-07-28 Rohm and Haas Electronic Materials LLC Compositions comprising sulfonamide material and processes for photolithography
EP2204392A1 (en) 2008-12-31 2010-07-07 Rohm and Haas Electronic Materials LLC Compositions and processes for photolithography
EP2204694A1 (en) 2008-12-31 2010-07-07 Rohm and Haas Electronic Materials LLC Compositions and processes for photolithography
JP5746824B2 (ja) 2009-02-08 2015-07-08 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 上塗りフォトレジストと共に使用するのに好適なコーティング組成物
EP2216683B1 (en) 2009-02-08 2018-11-14 Rohm and Haas Electronic Materials, L.L.C. Substrates coated with an antireflective composition and a photoresist
US8501383B2 (en) 2009-05-20 2013-08-06 Rohm And Haas Electronic Materials Llc Coating compositions for use with an overcoated photoresist
US9244352B2 (en) 2009-05-20 2016-01-26 Rohm And Haas Electronic Materials, Llc Coating compositions for use with an overcoated photoresist
JP5814516B2 (ja) 2009-06-08 2015-11-17 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ フォトリソグラフィー方法
US8883407B2 (en) 2009-06-12 2014-11-11 Rohm And Haas Electronic Materials Llc Coating compositions suitable for use with an overcoated photoresist
JP5687442B2 (ja) 2009-06-22 2015-03-18 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 光酸発生剤およびこれを含むフォトレジスト
KR101813298B1 (ko) 2010-02-24 2017-12-28 바스프 에스이 잠재성 산 및 그의 용도
JP5782283B2 (ja) 2010-03-31 2015-09-24 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 新規のポリマーおよびフォトレジスト組成物
IL213195A0 (en) 2010-05-31 2011-07-31 Rohm & Haas Elect Mat Photoresist compositions and emthods of forming photolithographic patterns
JP6144005B2 (ja) 2010-11-15 2017-06-07 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 糖成分を含む組成物およびフォトリソグラフィ方法
JP5961363B2 (ja) 2010-11-15 2016-08-02 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ ラクトン光酸発生剤、これを含む樹脂およびフォトレジスト
US9156785B2 (en) 2010-11-15 2015-10-13 Rohm And Haas Electronic Materials Llc Base reactive photoacid generators and photoresists comprising same
JP2012113302A (ja) 2010-11-15 2012-06-14 Rohm & Haas Electronic Materials Llc 塩基反応性成分を含む組成物およびフォトリソグラフィーのための方法
EP2472320A2 (en) 2010-12-30 2012-07-04 Rohm and Haas Electronic Materials LLC Compositions comprising base-reactive component and processes for photolithography
EP2472328B1 (en) 2010-12-31 2013-06-19 Rohm and Haas Electronic Materials LLC Coating compositions for use with an overcoated photoresist
EP2472329B1 (en) 2010-12-31 2013-06-05 Rohm and Haas Electronic Materials LLC Coating compositions for use with an overcoated photoresist
US9122159B2 (en) 2011-04-14 2015-09-01 Rohm And Haas Electronic Materials Llc Compositions and processes for photolithography
US9011591B2 (en) 2011-09-21 2015-04-21 Dow Global Technologies Llc Compositions and antireflective coatings for photolithography
US9366964B2 (en) 2011-09-21 2016-06-14 Dow Global Technologies Llc Compositions and antireflective coatings for photolithography
TWI527792B (zh) 2012-06-26 2016-04-01 羅門哈斯電子材料有限公司 光酸產生劑、含該光酸產生劑之光阻劑及含該光阻劑之經塗覆物件
JP5913241B2 (ja) 2012-09-15 2016-04-27 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 複数の酸発生剤化合物を含むフォトレジスト
US9067909B2 (en) 2013-08-28 2015-06-30 Rohm And Haas Electronic Materials Llc Photoacid generator, photoresist, coated substrate, and method of forming an electronic device
US9046767B2 (en) 2013-10-25 2015-06-02 Rohm And Haas Electronic Materials Llc Photoacid generator, photoresist, coated substrate, and method of forming an electronic device
KR102537349B1 (ko) 2015-02-02 2023-05-26 바스프 에스이 잠재성 산 및 그의 용도
CN106094431B (zh) 2015-04-30 2020-06-26 罗门哈斯电子材料韩国有限公司 光致抗蚀剂组合物和方法
TWI646397B (zh) 2015-10-31 2019-01-01 南韓商羅門哈斯電子材料韓國公司 與外塗佈光致抗蝕劑一起使用的塗料組合物
US11448964B2 (en) 2016-05-23 2022-09-20 Rohm And Haas Electronic Materials Korea Ltd. Coating compositions for use with an overcoated photoresist
CN109928904A (zh) 2017-11-30 2019-06-25 罗门哈斯电子材料有限责任公司 两性离子化合物和包括其的光致抗蚀剂
KR102177417B1 (ko) 2017-12-31 2020-11-11 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 포토레지스트 조성물 및 방법
US11874603B2 (en) 2021-09-15 2024-01-16 Rohm And Haas Electronic Materials Korea Ltd. Photoresist composition comprising amide compound and pattern formation methods using the same
US12512430B2 (en) 2022-06-28 2025-12-30 Dupont Electronic Materials International, Llc Metallization method

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
US4968581A (en) * 1986-02-24 1990-11-06 Hoechst Celanese Corporation High resolution photoresist of imide containing polymers
US4810613A (en) * 1987-05-22 1989-03-07 Hoechst Celanese Corporation Blocked monomer and polymers therefrom for use as photoresists
DE3721741A1 (de) * 1987-07-01 1989-01-12 Basf Ag Strahlungsempfindliches gemisch fuer lichtempfindliche beschichtungsmaterialien
DE3817011A1 (de) * 1988-05-19 1989-11-30 Basf Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefmustern
US5262281A (en) * 1990-04-10 1993-11-16 E. I. Du Pont De Nemours And Company Resist material for use in thick film resists
US5252427A (en) * 1990-04-10 1993-10-12 E. I. Du Pont De Nemours And Company Positive photoresist compositions
US5212047A (en) * 1990-04-10 1993-05-18 E. I. Du Pont De Nemours And Company Resist material and process for use
US5120633A (en) * 1990-04-10 1992-06-09 E. I. Du Pont De Nemours And Company Resist material for use in thick film resists
US5206317A (en) * 1990-04-10 1993-04-27 E. I. Du Pont De Nemours And Company Resist material and process for use
US5219711A (en) * 1990-04-10 1993-06-15 E. I. Du Pont De Nemours And Company Positive image formation utilizing resist material with carbazole diazonium salt acid generator
US5072029A (en) * 1990-04-10 1991-12-10 E. I. Du Pont De Nemours And Company Catalyzed process for reacting carboxylic acids with vinyl ethers
EP0476865A1 (en) * 1990-08-31 1992-03-25 Wako Pure Chemical Industries Ltd Resist material and process for forming pattern using the same
US5085972A (en) * 1990-11-26 1992-02-04 Minnesota Mining And Manufacturing Company Alkoxyalkyl ester solubility inhibitors for phenolic resins
US5102771A (en) * 1990-11-26 1992-04-07 Minnesota Mining And Manufacturing Company Photosensitive materials
EP0601974B1 (de) * 1992-12-04 1997-05-28 OCG Microelectronic Materials Inc. Positiv-Photoresist mit verbesserten Prozesseigenschaften
KR0153807B1 (ko) * 1993-12-28 1998-11-16 세끼자와 다다시 방사선 감광재료 및 패턴형성방법
ATE195590T1 (de) * 1994-06-22 2000-09-15 Ciba Sc Holding Ag Positiv-photoresist
EP0789279B2 (en) * 1996-02-09 2004-12-08 Wako Pure Chemical Industries Ltd Polymer and resist material
US5861231A (en) * 1996-06-11 1999-01-19 Shipley Company, L.L.C. Copolymers and photoresist compositions comprising copolymer resin binder component

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000122296A (ja) * 1998-08-04 2000-04-28 Shipley Co Llc フォトレジスト組成物、その方法及びそれらを含有してなる工業製品
JP2002311587A (ja) * 2001-04-10 2002-10-23 Fujitsu Ltd 化学増幅レジスト組成物及びそれを用いたパターン形成方法
KR100537964B1 (ko) * 2001-07-09 2005-12-21 미쯔이가가꾸가부시끼가이샤 포지티브형 감광성 레지스트 조성물 및 그의 용도
KR100714811B1 (ko) * 2003-03-10 2007-05-04 미쓰이 가가쿠 가부시키가이샤 산감응성 공중합체 및 그 용도
WO2004081065A1 (ja) * 2003-03-10 2004-09-23 Mitsui Chemicals, Inc. 酸感応性共重合体およびその用途
JPWO2004081065A1 (ja) * 2003-03-10 2006-06-08 三井化学株式会社 酸感応性共重合体およびその用途
JP2006003861A (ja) * 2004-05-19 2006-01-05 Mitsui Chemicals Inc ポジ型感光性レジスト組成物およびその製造方法
JP2006219555A (ja) * 2005-02-09 2006-08-24 Tokyo Ohka Kogyo Co Ltd 高分子化合物、ポジ型レジスト組成物およびレジストパターン形成方法
JP2014041327A (ja) * 2012-07-27 2014-03-06 Fujifilm Corp 感活性光線性又は感放射線性樹脂組成物、それを用いたレジスト膜、パターン形成方法、電子デバイスの製造方法、及び電子デバイス
US9291896B2 (en) 2012-07-27 2016-03-22 Fujifilm Corporation Actinic ray-sensitive or radiation-sensitive resin composition, resist film using the same, pattern forming method, manufacturing method of electronic device, and electronic device
US9291898B2 (en) 2012-07-27 2016-03-22 Fujifilm Corporation Actinic ray-sensitive or radiation-sensitive resin composition, resist film using the same, pattern forming method, manufacturing method of electronic device, electronic device and resin
US9551933B2 (en) 2012-07-27 2017-01-24 Fujifilm Corporation Actinic ray-sensitive or radiation-sensitive resin composition, resist film, using the same, pattern forming method, manufacturing method of electronic device, and electronic device
KR20210012905A (ko) 2019-07-25 2021-02-03 마루젠 세끼유가가꾸 가부시키가이샤 산분해성 수지의 제조 방법
US11725078B2 (en) 2019-07-25 2023-08-15 Maruzen Petrochemical Co., Ltd. Method for producing acid-decomposable polymer

Also Published As

Publication number Publication date
EP0829766A2 (en) 1998-03-18
EP0829766A3 (en) 1998-07-01
KR19980024654A (ko) 1998-07-06
US6090526A (en) 2000-07-18
DE69718974T2 (de) 2003-11-06
EP0829766B1 (en) 2003-02-12
DE69718974D1 (de) 2003-03-20

Similar Documents

Publication Publication Date Title
EP0829766B1 (en) Novel polymers and photoresist compositions
JP3263010B2 (ja) 新規なコポリマーとコポリマー樹脂バインダー成分からなるフォトレジスト組成物
US6057083A (en) Polymers and photoresist compositions
JP2001194792A (ja) フェノール／脂環式コポリマーおよびフォトレジスト
KR19990067915A (ko) 단파장 이미지화를 위한 중합체 및 포토레지스트 조성물
KR20000047909A (ko) 이타콘산 무수물 중합체 및 이를 함유하는 포토레지스트조성물
US5780566A (en) Polymers containing protected styrene and unprotected hydroxybenzyl (meth)acrylamides
EP1126321A1 (en) Positive photoresists containing crosslinked polymers
JPH11269234A (ja) 感光性ポリマー及びそれを利用した化学増幅型レジスト組成物
JP3587770B2 (ja) フォトレジスト用共重合体とその製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、及び半導体素子
US6077643A (en) Polymers and photoresist compositions
US6107425A (en) Narrow molecular weight distribution polymers and use of same as resin binders for negative-acting photoresists
US5853953A (en) Polymers and photoresist compositions comprising same
KR100944727B1 (ko) 포토애시드에 불안정한 중합체 및 이를 포함하는포토레지스트
JP3547376B2 (ja) フォトレジスト用共重合体とその製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、及び、半導体素子
US6770413B1 (en) Hydroxyphenyl copolymers and photoresists comprising same
JP2003105035A (ja) フォトレジスト単量体、フォトレジスト重合体、フォトレジスト重合体の製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、及び半導体素子
EP1031878A1 (en) Novel polymers and photoresist compositions comprising same
JP2000298348A (ja) 短い波長での画像形成に特に適したフォトレジスト組成物
KR100520187B1 (ko) 할로겐을 포함하는 신규의 포토레지스트
JP2000267286A (ja) 新規のポリマーとそれを適用したフォトレジスト組成物
KR20060043054A (ko) 포토레지스트 조성물

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040903

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040903

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040903

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20070803

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070814

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20080129