JP2000012365A - トンネル接合の形成方法およびトンネル接合 - Google Patents

トンネル接合の形成方法およびトンネル接合

Info

Publication number
JP2000012365A
JP2000012365A JP10349432A JP34943298A JP2000012365A JP 2000012365 A JP2000012365 A JP 2000012365A JP 10349432 A JP10349432 A JP 10349432A JP 34943298 A JP34943298 A JP 34943298A JP 2000012365 A JP2000012365 A JP 2000012365A
Authority
JP
Japan
Prior art keywords
layer
tunnel junction
ferromagnetic
ferromagnetic layer
dome
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10349432A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000012365A5 (https=
Inventor
Thomas C Anthony
トーマス・シー・アンソニー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of JP2000012365A publication Critical patent/JP2000012365A/ja
Publication of JP2000012365A5 publication Critical patent/JP2000012365A5/ja
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12903—Cu-base component
    • Y10T428/12917—Next to Fe-base component
    • Y10T428/12924—Fe-base has 0.01-1.7% carbon [i.e., steel]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12931—Co-, Fe-, or Ni-base components, alternative to each other

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
  • Thin Magnetic Films (AREA)
JP10349432A 1998-01-06 1998-12-09 トンネル接合の形成方法およびトンネル接合 Pending JP2000012365A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/003,320 US6169303B1 (en) 1998-01-06 1998-01-06 Ferromagnetic tunnel junctions with enhanced magneto-resistance
US003,320 1998-01-06

Publications (2)

Publication Number Publication Date
JP2000012365A true JP2000012365A (ja) 2000-01-14
JP2000012365A5 JP2000012365A5 (https=) 2004-08-05

Family

ID=21705248

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10349432A Pending JP2000012365A (ja) 1998-01-06 1998-12-09 トンネル接合の形成方法およびトンネル接合

Country Status (5)

Country Link
US (2) US6169303B1 (https=)
EP (1) EP0929110B1 (https=)
JP (1) JP2000012365A (https=)
CN (1) CN1179424C (https=)
DE (1) DE69913574T2 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001298228A (ja) * 2000-02-28 2001-10-26 Hewlett Packard Co <Hp> Ｍｒａｍデバイス用スピン依存型トンネリング接合
JP2006352147A (ja) * 2006-07-11 2006-12-28 Toshiba Corp 磁気記憶装置

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DE19949713C2 (de) * 1999-10-15 2001-08-16 Bosch Gmbh Robert Magnetoresistives Schichtsystem
US6544801B1 (en) * 2000-08-21 2003-04-08 Motorola, Inc. Method of fabricating thermally stable MTJ cell and apparatus
US6515341B2 (en) * 2001-02-26 2003-02-04 Motorola, Inc. Magnetoelectronics element having a stressed over-layer configured for alteration of the switching energy barrier
TWI222630B (en) * 2001-04-24 2004-10-21 Matsushita Electric Industrial Co Ltd Magnetoresistive element and magnetoresistive memory device using the same
US6781801B2 (en) 2001-08-10 2004-08-24 Seagate Technology Llc Tunneling magnetoresistive sensor with spin polarized current injection
US6545906B1 (en) 2001-10-16 2003-04-08 Motorola, Inc. Method of writing to scalable magnetoresistance random access memory element
WO2003092084A1 (en) * 2002-04-23 2003-11-06 Matsushita Electric Industrial Co., Ltd. Magnetoresistive element, manufacturing method thereof, magnetic head, magnetic memory, and magnetic recording device using the same
US7095646B2 (en) 2002-07-17 2006-08-22 Freescale Semiconductor, Inc. Multi-state magnetoresistance random access cell with improved memory storage density
US6956763B2 (en) 2003-06-27 2005-10-18 Freescale Semiconductor, Inc. MRAM element and methods for writing the MRAM element
US7189583B2 (en) * 2003-07-02 2007-03-13 Micron Technology, Inc. Method for production of MRAM elements
US6967366B2 (en) 2003-08-25 2005-11-22 Freescale Semiconductor, Inc. Magnetoresistive random access memory with reduced switching field variation
US6961263B2 (en) * 2003-09-08 2005-11-01 Hewlett-Packard Development Company, L.P. Memory device with a thermally assisted write
JP5095076B2 (ja) * 2004-11-09 2012-12-12 株式会社東芝 磁気抵抗効果素子
US7129098B2 (en) 2004-11-24 2006-10-31 Freescale Semiconductor, Inc. Reduced power magnetoresistive random access memory elements
US7363699B2 (en) * 2005-03-31 2008-04-29 Hitachi Global Storage Technologies Netherlands B. V. Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in hard magnetic bias layers
US7672090B2 (en) * 2005-03-31 2010-03-02 Hitachi Global Storage Technologies Netherlands B.V. Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic pinning layer
US7460343B2 (en) * 2005-03-31 2008-12-02 Hitachi Global Storage Technologies Netherlands B.V. Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layer
US7457085B2 (en) 2005-03-31 2008-11-25 Hitachi Global Storage Technologies Netherlands B.V. Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in hard magnetic bias layers
US7360300B2 (en) * 2005-03-31 2008-04-22 Hitachi Global Storage Technologies Netherlands B.V. Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic pinning layer
US7382586B2 (en) * 2005-03-31 2008-06-03 Hitachi Global Storage Technologies Netherlands B.V. Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a self biased free layer
US7360299B2 (en) * 2005-03-31 2008-04-22 Hitachi Global Storage Technologies Netherlands B. V. Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layer
JP2007096105A (ja) * 2005-09-29 2007-04-12 Toshiba Corp 磁気抵抗効果素子、磁気抵抗効果ヘッド、磁気記憶装置、および磁気メモリ
US8004374B2 (en) * 2005-12-14 2011-08-23 Hitachi Global Storage Technologies Netherlands B.V. Increased anisotropy induced by direct ion etch for telecommunications/electronics devices
JP4768488B2 (ja) 2006-03-27 2011-09-07 株式会社東芝 磁気抵抗効果素子，磁気ヘッド，および磁気ディスク装置
US7900342B2 (en) * 2007-02-23 2011-03-08 Hitachi Global Storage Technologies Netherlands, B.V. Methods of fabricating magnetoresistance sensors pinned by an etch induced magnetic anisotropy
FR2972077B1 (fr) * 2011-02-24 2013-08-30 Thales Sa Composant electronique, procede de fabrication et utilisation de graphene dans un composant electronique

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DE1252739B (de) * 1964-03-17 1967-10-26 Siemens Aktiengesellschaft, Berlin und München, München Speicherelement mit gestapelten magnetischen Schichten
US4806202A (en) * 1987-10-05 1989-02-21 Intel Corporation Field enhanced tunnel oxide on treated substrates
US5390061A (en) * 1990-06-08 1995-02-14 Hitachi, Ltd. Multilayer magnetoresistance effect-type magnetic head
JP2815495B2 (ja) * 1991-07-08 1998-10-27 ローム株式会社 半導体記憶装置
JPH06204494A (ja) * 1993-01-07 1994-07-22 Fujitsu Ltd 絶縁膜の形成方法および半導体素子の製造方法
US5585198A (en) * 1993-10-20 1996-12-17 Sanyo Electric Co., Ltd. Magnetorsistance effect element
DE69513630T2 (de) * 1994-10-05 2000-06-21 Koninklijke Philips Electronics N.V., Eindhoven Magnetische mehrlagenanordnung, die eine doppelbarrierenstruktur mit resonantem tunneleffekt enthält
US5629922A (en) * 1995-02-22 1997-05-13 Massachusetts Institute Of Technology Electron tunneling device using ferromagnetic thin films
US5731598A (en) * 1995-06-23 1998-03-24 Matsushita Electric Industrial Co. Ltd. Single electron tunnel device and method for fabricating the same
US5569617A (en) * 1995-12-21 1996-10-29 Honeywell Inc. Method of making integrated spacer for magnetoresistive RAM
US5712612A (en) * 1996-01-02 1998-01-27 Hewlett-Packard Company Tunneling ferrimagnetic magnetoresistive sensor
JP3540083B2 (ja) * 1996-02-23 2004-07-07 富士通株式会社 磁気センサ
US5650958A (en) 1996-03-18 1997-07-22 International Business Machines Corporation Magnetic tunnel junctions with controlled magnetic response
US5764567A (en) 1996-11-27 1998-06-09 International Business Machines Corporation Magnetic tunnel junction device with nonferromagnetic interface layer for improved magnetic field response
US5879783A (en) * 1996-08-05 1999-03-09 Seagate Technology, Inc. Low noise magnetic recording medium and method of manufacturing
US5768181A (en) * 1997-04-07 1998-06-16 Motorola, Inc. Magnetic device having multi-layer with insulating and conductive layers
US5966012A (en) * 1997-10-07 1999-10-12 International Business Machines Corporation Magnetic tunnel junction device with improved fixed and free ferromagnetic layers
US5898548A (en) * 1997-10-24 1999-04-27 International Business Machines Corporation Shielded magnetic tunnel junction magnetoresistive read head

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001298228A (ja) * 2000-02-28 2001-10-26 Hewlett Packard Co <Hp> Ｍｒａｍデバイス用スピン依存型トンネリング接合
JP2006352147A (ja) * 2006-07-11 2006-12-28 Toshiba Corp 磁気記憶装置

Also Published As

Publication number Publication date
EP0929110A1 (en) 1999-07-14
DE69913574D1 (de) 2004-01-29
CN1222771A (zh) 1999-07-14
US6169303B1 (en) 2001-01-02
US20020114972A1 (en) 2002-08-22
US6511855B2 (en) 2003-01-28
CN1179424C (zh) 2004-12-08
EP0929110B1 (en) 2003-12-17
DE69913574T2 (de) 2004-09-30

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