CN1179424C - 具有增大磁阻的铁磁隧道结 - Google Patents

具有增大磁阻的铁磁隧道结 Download PDF

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Publication number
CN1179424C
CN1179424C CNB981225896A CN98122589A CN1179424C CN 1179424 C CN1179424 C CN 1179424C CN B981225896 A CNB981225896 A CN B981225896A CN 98122589 A CN98122589 A CN 98122589A CN 1179424 C CN1179424 C CN 1179424C
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CN
China
Prior art keywords
layer
ferromagnetic
boundary
tunnel junction
ferromagnetic layer
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Expired - Lifetime
Application number
CNB981225896A
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English (en)
Chinese (zh)
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CN1222771A (zh
Inventor
Tc
T·C·安东尼
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Samsung Electronics Co Ltd
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Hewlett Packard Co
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Publication date
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Publication of CN1222771A publication Critical patent/CN1222771A/zh
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Publication of CN1179424C publication Critical patent/CN1179424C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12903—Cu-base component
    • Y10T428/12917—Next to Fe-base component
    • Y10T428/12924—Fe-base has 0.01-1.7% carbon [i.e., steel]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12931—Co-, Fe-, or Ni-base components, alternative to each other

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
  • Thin Magnetic Films (AREA)
CNB981225896A 1998-01-06 1998-11-25 具有增大磁阻的铁磁隧道结 Expired - Lifetime CN1179424C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/003,320 US6169303B1 (en) 1998-01-06 1998-01-06 Ferromagnetic tunnel junctions with enhanced magneto-resistance
US003,320 1998-01-06
US003320 1998-01-06

Publications (2)

Publication Number Publication Date
CN1222771A CN1222771A (zh) 1999-07-14
CN1179424C true CN1179424C (zh) 2004-12-08

Family

ID=21705248

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB981225896A Expired - Lifetime CN1179424C (zh) 1998-01-06 1998-11-25 具有增大磁阻的铁磁隧道结

Country Status (5)

Country Link
US (2) US6169303B1 (https=)
EP (1) EP0929110B1 (https=)
JP (1) JP2000012365A (https=)
CN (1) CN1179424C (https=)
DE (1) DE69913574T2 (https=)

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DE19949713C2 (de) * 1999-10-15 2001-08-16 Bosch Gmbh Robert Magnetoresistives Schichtsystem
US6727105B1 (en) * 2000-02-28 2004-04-27 Hewlett-Packard Development Company, L.P. Method of fabricating an MRAM device including spin dependent tunneling junction memory cells
US6544801B1 (en) * 2000-08-21 2003-04-08 Motorola, Inc. Method of fabricating thermally stable MTJ cell and apparatus
US6515341B2 (en) * 2001-02-26 2003-02-04 Motorola, Inc. Magnetoelectronics element having a stressed over-layer configured for alteration of the switching energy barrier
TWI222630B (en) * 2001-04-24 2004-10-21 Matsushita Electric Industrial Co Ltd Magnetoresistive element and magnetoresistive memory device using the same
US6781801B2 (en) 2001-08-10 2004-08-24 Seagate Technology Llc Tunneling magnetoresistive sensor with spin polarized current injection
US6545906B1 (en) 2001-10-16 2003-04-08 Motorola, Inc. Method of writing to scalable magnetoresistance random access memory element
WO2003092084A1 (en) * 2002-04-23 2003-11-06 Matsushita Electric Industrial Co., Ltd. Magnetoresistive element, manufacturing method thereof, magnetic head, magnetic memory, and magnetic recording device using the same
US7095646B2 (en) 2002-07-17 2006-08-22 Freescale Semiconductor, Inc. Multi-state magnetoresistance random access cell with improved memory storage density
US6956763B2 (en) 2003-06-27 2005-10-18 Freescale Semiconductor, Inc. MRAM element and methods for writing the MRAM element
US7189583B2 (en) * 2003-07-02 2007-03-13 Micron Technology, Inc. Method for production of MRAM elements
US6967366B2 (en) 2003-08-25 2005-11-22 Freescale Semiconductor, Inc. Magnetoresistive random access memory with reduced switching field variation
US6961263B2 (en) * 2003-09-08 2005-11-01 Hewlett-Packard Development Company, L.P. Memory device with a thermally assisted write
JP5095076B2 (ja) * 2004-11-09 2012-12-12 株式会社東芝 磁気抵抗効果素子
US7129098B2 (en) 2004-11-24 2006-10-31 Freescale Semiconductor, Inc. Reduced power magnetoresistive random access memory elements
US7363699B2 (en) * 2005-03-31 2008-04-29 Hitachi Global Storage Technologies Netherlands B. V. Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in hard magnetic bias layers
US7672090B2 (en) * 2005-03-31 2010-03-02 Hitachi Global Storage Technologies Netherlands B.V. Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic pinning layer
US7460343B2 (en) * 2005-03-31 2008-12-02 Hitachi Global Storage Technologies Netherlands B.V. Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layer
US7457085B2 (en) 2005-03-31 2008-11-25 Hitachi Global Storage Technologies Netherlands B.V. Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in hard magnetic bias layers
US7360300B2 (en) * 2005-03-31 2008-04-22 Hitachi Global Storage Technologies Netherlands B.V. Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic pinning layer
US7382586B2 (en) * 2005-03-31 2008-06-03 Hitachi Global Storage Technologies Netherlands B.V. Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a self biased free layer
US7360299B2 (en) * 2005-03-31 2008-04-22 Hitachi Global Storage Technologies Netherlands B. V. Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layer
JP2007096105A (ja) * 2005-09-29 2007-04-12 Toshiba Corp 磁気抵抗効果素子、磁気抵抗効果ヘッド、磁気記憶装置、および磁気メモリ
US8004374B2 (en) * 2005-12-14 2011-08-23 Hitachi Global Storage Technologies Netherlands B.V. Increased anisotropy induced by direct ion etch for telecommunications/electronics devices
JP4768488B2 (ja) 2006-03-27 2011-09-07 株式会社東芝 磁気抵抗効果素子，磁気ヘッド，および磁気ディスク装置
JP4537981B2 (ja) * 2006-07-11 2010-09-08 株式会社東芝 磁気記憶装置
US7900342B2 (en) * 2007-02-23 2011-03-08 Hitachi Global Storage Technologies Netherlands, B.V. Methods of fabricating magnetoresistance sensors pinned by an etch induced magnetic anisotropy
FR2972077B1 (fr) * 2011-02-24 2013-08-30 Thales Sa Composant electronique, procede de fabrication et utilisation de graphene dans un composant electronique

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1252739B (de) * 1964-03-17 1967-10-26 Siemens Aktiengesellschaft, Berlin und München, München Speicherelement mit gestapelten magnetischen Schichten
US4806202A (en) * 1987-10-05 1989-02-21 Intel Corporation Field enhanced tunnel oxide on treated substrates
US5390061A (en) * 1990-06-08 1995-02-14 Hitachi, Ltd. Multilayer magnetoresistance effect-type magnetic head
JP2815495B2 (ja) * 1991-07-08 1998-10-27 ローム株式会社 半導体記憶装置
JPH06204494A (ja) * 1993-01-07 1994-07-22 Fujitsu Ltd 絶縁膜の形成方法および半導体素子の製造方法
US5585198A (en) * 1993-10-20 1996-12-17 Sanyo Electric Co., Ltd. Magnetorsistance effect element
DE69513630T2 (de) * 1994-10-05 2000-06-21 Koninklijke Philips Electronics N.V., Eindhoven Magnetische mehrlagenanordnung, die eine doppelbarrierenstruktur mit resonantem tunneleffekt enthält
US5629922A (en) * 1995-02-22 1997-05-13 Massachusetts Institute Of Technology Electron tunneling device using ferromagnetic thin films
US5731598A (en) * 1995-06-23 1998-03-24 Matsushita Electric Industrial Co. Ltd. Single electron tunnel device and method for fabricating the same
US5569617A (en) * 1995-12-21 1996-10-29 Honeywell Inc. Method of making integrated spacer for magnetoresistive RAM
US5712612A (en) * 1996-01-02 1998-01-27 Hewlett-Packard Company Tunneling ferrimagnetic magnetoresistive sensor
JP3540083B2 (ja) * 1996-02-23 2004-07-07 富士通株式会社 磁気センサ
US5650958A (en) 1996-03-18 1997-07-22 International Business Machines Corporation Magnetic tunnel junctions with controlled magnetic response
US5764567A (en) 1996-11-27 1998-06-09 International Business Machines Corporation Magnetic tunnel junction device with nonferromagnetic interface layer for improved magnetic field response
US5879783A (en) * 1996-08-05 1999-03-09 Seagate Technology, Inc. Low noise magnetic recording medium and method of manufacturing
US5768181A (en) * 1997-04-07 1998-06-16 Motorola, Inc. Magnetic device having multi-layer with insulating and conductive layers
US5966012A (en) * 1997-10-07 1999-10-12 International Business Machines Corporation Magnetic tunnel junction device with improved fixed and free ferromagnetic layers
US5898548A (en) * 1997-10-24 1999-04-27 International Business Machines Corporation Shielded magnetic tunnel junction magnetoresistive read head

Also Published As

Publication number Publication date
EP0929110A1 (en) 1999-07-14
DE69913574D1 (de) 2004-01-29
CN1222771A (zh) 1999-07-14
US6169303B1 (en) 2001-01-02
US20020114972A1 (en) 2002-08-22
US6511855B2 (en) 2003-01-28
EP0929110B1 (en) 2003-12-17
JP2000012365A (ja) 2000-01-14
DE69913574T2 (de) 2004-09-30

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Owner name: SAMSUNG ELECTRONICS CO., LTD

Free format text: FORMER OWNER: HEWLETT-PACKARD DEVELOPMENT COMPANY

Effective date: 20071228

C41 Transfer of patent application or patent right or utility model
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Effective date of registration: 20071228

Address after: Gyeonggi Do, South Korea

Patentee after: Samsung Electronics Co., Ltd.

Address before: California, USA

Patentee before: Hewlett-Packard Co.

CX01 Expiry of patent term

Granted publication date: 20041208

CX01 Expiry of patent term