DE69913574D1 - Ferromagnetische Tunneleffektanordnung - Google Patents

Ferromagnetische Tunneleffektanordnung

Info

Publication number
DE69913574D1
DE69913574D1 DE69913574T DE69913574T DE69913574D1 DE 69913574 D1 DE69913574 D1 DE 69913574D1 DE 69913574 T DE69913574 T DE 69913574T DE 69913574 T DE69913574 T DE 69913574T DE 69913574 D1 DE69913574 D1 DE 69913574D1
Authority
DE
Germany
Prior art keywords
tunnel effect
ferromagnetic tunnel
effect arrangement
arrangement
ferromagnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69913574T
Other languages
English (en)
Other versions
DE69913574T2 (de
Inventor
Thomas C Anthony
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Application granted granted Critical
Publication of DE69913574D1 publication Critical patent/DE69913574D1/de
Publication of DE69913574T2 publication Critical patent/DE69913574T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12903—Cu-base component
    • Y10T428/12917—Next to Fe-base component
    • Y10T428/12924—Fe-base has 0.01-1.7% carbon [i.e., steel]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12931—Co-, Fe-, or Ni-base components, alternative to each other
DE69913574T 1998-01-06 1999-01-04 Ferromagnetische Tunneleffektanordnung Expired - Lifetime DE69913574T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/003,320 US6169303B1 (en) 1998-01-06 1998-01-06 Ferromagnetic tunnel junctions with enhanced magneto-resistance
US3320 1998-01-06

Publications (2)

Publication Number Publication Date
DE69913574D1 true DE69913574D1 (de) 2004-01-29
DE69913574T2 DE69913574T2 (de) 2004-09-30

Family

ID=21705248

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69913574T Expired - Lifetime DE69913574T2 (de) 1998-01-06 1999-01-04 Ferromagnetische Tunneleffektanordnung

Country Status (5)

Country Link
US (2) US6169303B1 (de)
EP (1) EP0929110B1 (de)
JP (1) JP2000012365A (de)
CN (1) CN1179424C (de)
DE (1) DE69913574T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19949713C2 (de) * 1999-10-15 2001-08-16 Bosch Gmbh Robert Magnetoresistives Schichtsystem
US6727105B1 (en) 2000-02-28 2004-04-27 Hewlett-Packard Development Company, L.P. Method of fabricating an MRAM device including spin dependent tunneling junction memory cells
US6544801B1 (en) * 2000-08-21 2003-04-08 Motorola, Inc. Method of fabricating thermally stable MTJ cell and apparatus
US6515341B2 (en) 2001-02-26 2003-02-04 Motorola, Inc. Magnetoelectronics element having a stressed over-layer configured for alteration of the switching energy barrier
TWI222630B (en) * 2001-04-24 2004-10-21 Matsushita Electric Ind Co Ltd Magnetoresistive element and magnetoresistive memory device using the same
US6781801B2 (en) 2001-08-10 2004-08-24 Seagate Technology Llc Tunneling magnetoresistive sensor with spin polarized current injection
JPWO2003092084A1 (ja) * 2002-04-23 2005-09-02 松下電器産業株式会社 磁気抵抗効果素子とその製造方法ならびにこれを用いた磁気ヘッド、磁気メモリおよび磁気記録装置
US7189583B2 (en) * 2003-07-02 2007-03-13 Micron Technology, Inc. Method for production of MRAM elements
US6961263B2 (en) * 2003-09-08 2005-11-01 Hewlett-Packard Development Company, L.P. Memory device with a thermally assisted write
JP5095076B2 (ja) * 2004-11-09 2012-12-12 株式会社東芝 磁気抵抗効果素子
US7460343B2 (en) * 2005-03-31 2008-12-02 Hitachi Global Storage Technologies Netherlands B.V. Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layer
US7457085B2 (en) 2005-03-31 2008-11-25 Hitachi Global Storage Technologies Netherlands B.V. Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in hard magnetic bias layers
US7382586B2 (en) * 2005-03-31 2008-06-03 Hitachi Global Storage Technologies Netherlands B.V. Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a self biased free layer
US7360300B2 (en) * 2005-03-31 2008-04-22 Hitachi Global Storage Technologies Netherlands B.V. Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic pinning layer
US7360299B2 (en) * 2005-03-31 2008-04-22 Hitachi Global Storage Technologies Netherlands B. V. Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layer
US7363699B2 (en) * 2005-03-31 2008-04-29 Hitachi Global Storage Technologies Netherlands B. V. Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in hard magnetic bias layers
US7672090B2 (en) * 2005-03-31 2010-03-02 Hitachi Global Storage Technologies Netherlands B.V. Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic pinning layer
JP2007096105A (ja) 2005-09-29 2007-04-12 Toshiba Corp 磁気抵抗効果素子、磁気抵抗効果ヘッド、磁気記憶装置、および磁気メモリ
US8004374B2 (en) * 2005-12-14 2011-08-23 Hitachi Global Storage Technologies Netherlands B.V. Increased anisotropy induced by direct ion etch for telecommunications/electronics devices
JP4768488B2 (ja) 2006-03-27 2011-09-07 株式会社東芝 磁気抵抗効果素子，磁気ヘッド，および磁気ディスク装置
JP4537981B2 (ja) * 2006-07-11 2010-09-08 株式会社東芝 磁気記憶装置
US7900342B2 (en) * 2007-02-23 2011-03-08 Hitachi Global Storage Technologies Netherlands, B.V. Methods of fabricating magnetoresistance sensors pinned by an etch induced magnetic anisotropy
FR2972077B1 (fr) * 2011-02-24 2013-08-30 Thales Sa Composant electronique, procede de fabrication et utilisation de graphene dans un composant electronique

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1252739B (de) * 1964-03-17 1967-10-26 Siemens Aktiengesellschaft, Berlin und München, München Speicherelement mit gestapelten magnetischen Schichten
US4806202A (en) * 1987-10-05 1989-02-21 Intel Corporation Field enhanced tunnel oxide on treated substrates
US5390061A (en) * 1990-06-08 1995-02-14 Hitachi, Ltd. Multilayer magnetoresistance effect-type magnetic head
JP2815495B2 (ja) * 1991-07-08 1998-10-27 ローム株式会社 半導体記憶装置
JPH06204494A (ja) * 1993-01-07 1994-07-22 Fujitsu Ltd 絶縁膜の形成方法および半導体素子の製造方法
US5585198A (en) * 1993-10-20 1996-12-17 Sanyo Electric Co., Ltd. Magnetorsistance effect element
DE69513630T2 (de) * 1994-10-05 2000-06-21 Koninkl Philips Electronics Nv Magnetische mehrlagenanordnung, die eine doppelbarrierenstruktur mit resonantem tunneleffekt enthält
US5629922A (en) * 1995-02-22 1997-05-13 Massachusetts Institute Of Technology Electron tunneling device using ferromagnetic thin films
US5731598A (en) * 1995-06-23 1998-03-24 Matsushita Electric Industrial Co. Ltd. Single electron tunnel device and method for fabricating the same
US5569617A (en) * 1995-12-21 1996-10-29 Honeywell Inc. Method of making integrated spacer for magnetoresistive RAM
US5712612A (en) * 1996-01-02 1998-01-27 Hewlett-Packard Company Tunneling ferrimagnetic magnetoresistive sensor
JP3540083B2 (ja) * 1996-02-23 2004-07-07 富士通株式会社 磁気センサ
US5650958A (en) 1996-03-18 1997-07-22 International Business Machines Corporation Magnetic tunnel junctions with controlled magnetic response
US5764567A (en) 1996-11-27 1998-06-09 International Business Machines Corporation Magnetic tunnel junction device with nonferromagnetic interface layer for improved magnetic field response
US5879783A (en) * 1996-08-05 1999-03-09 Seagate Technology, Inc. Low noise magnetic recording medium and method of manufacturing
US5768181A (en) * 1997-04-07 1998-06-16 Motorola, Inc. Magnetic device having multi-layer with insulating and conductive layers
US5966012A (en) * 1997-10-07 1999-10-12 International Business Machines Corporation Magnetic tunnel junction device with improved fixed and free ferromagnetic layers
US5898548A (en) * 1997-10-24 1999-04-27 International Business Machines Corporation Shielded magnetic tunnel junction magnetoresistive read head

Also Published As

Publication number Publication date
DE69913574T2 (de) 2004-09-30
EP0929110B1 (de) 2003-12-17
JP2000012365A (ja) 2000-01-14
CN1222771A (zh) 1999-07-14
US20020114972A1 (en) 2002-08-22
EP0929110A1 (de) 1999-07-14
US6169303B1 (en) 2001-01-02
US6511855B2 (en) 2003-01-28
CN1179424C (zh) 2004-12-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: HEWLETT-PACKARD DEVELOPMENT CO., L.P., HOUSTON, TE

8327 Change in the person/name/address of the patent owner

Owner name: SAMSUNG ELECTRONICS CO., LTD., SUWON, GYEONGGI, KR