JP1546512S - - Google Patents
Info
- Publication number
- JP1546512S JP1546512S JPD2015-19682F JP2015019682F JP1546512S JP 1546512 S JP1546512 S JP 1546512S JP 2015019682 F JP2015019682 F JP 2015019682F JP 1546512 S JP1546512 S JP 1546512S
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPD2015-19682F JP1546512S (fr) | 2015-09-04 | 2015-09-04 | |
US29/555,822 USD791090S1 (en) | 2015-09-04 | 2016-02-25 | Reaction tube |
TW105304215F TWD181481S (zh) | 2015-09-04 | 2016-03-02 | 反應管 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPD2015-19682F JP1546512S (fr) | 2015-09-04 | 2015-09-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP1546512S true JP1546512S (fr) | 2016-03-22 |
Family
ID=55522530
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JPD2015-19682F Active JP1546512S (fr) | 2015-09-04 | 2015-09-04 |
Country Status (3)
Country | Link |
---|---|
US (1) | USD791090S1 (fr) |
JP (1) | JP1546512S (fr) |
TW (1) | TWD181481S (fr) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017138087A1 (fr) | 2016-02-09 | 2017-08-17 | 株式会社日立国際電気 | Appareil de traitement de substrat et procédé de fabrication de dispositif à semi-conducteur |
JP1605460S (fr) * | 2017-08-09 | 2021-05-31 | ||
JP1605461S (fr) * | 2017-08-10 | 2021-05-31 | ||
JP1605462S (fr) * | 2017-08-10 | 2021-05-31 | ||
JP1605982S (fr) * | 2017-12-27 | 2021-05-31 | ||
JP1644260S (fr) * | 2019-03-20 | 2019-10-28 | ||
USD931241S1 (en) * | 2019-08-28 | 2021-09-21 | Applied Materials, Inc. | Lower shield for a substrate processing chamber |
USD931823S1 (en) * | 2020-01-29 | 2021-09-28 | Kokusai Electric Corporation | Reaction tube |
JP1713189S (fr) * | 2021-09-15 | 2022-04-21 | ||
JP1713188S (fr) * | 2021-09-15 | 2022-04-21 | ||
JP1731789S (fr) * | 2022-03-01 | 2022-12-09 | ||
JP1731877S (fr) * | 2022-03-01 | 2022-12-09 | ||
JP1731878S (fr) * | 2022-03-01 | 2022-12-09 | ||
JP1731674S (fr) * | 2022-05-30 | 2022-12-08 | ||
JP1731675S (fr) * | 2022-05-30 | 2022-12-08 | ||
JP1731673S (fr) * | 2022-05-30 | 2022-12-08 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR890008922A (ko) * | 1987-11-21 | 1989-07-13 | 후세 노보루 | 열처리 장치 |
USD406113S (en) * | 1997-01-31 | 1999-02-23 | Tokyo Electron Limited | Processing tube for use in a semiconductor wafer heat processing apparatus |
USD424024S (en) * | 1997-01-31 | 2000-05-02 | Tokyo Electron Limited | Quartz process tube |
USD417438S (en) * | 1997-01-31 | 1999-12-07 | Tokyo Electron Limited | Quartz outer tube |
USD423463S (en) * | 1997-01-31 | 2000-04-25 | Tokyo Electron Limited | Quartz process tube |
USD405429S (en) * | 1997-01-31 | 1999-02-09 | Tokyo Electron Limited | Processing tube for use in a semiconductor wafer heat processing apparatus |
USD405062S (en) * | 1997-08-20 | 1999-02-02 | Tokyo Electron Ltd. | Processing tube for use in a semiconductor wafer heat processing apparatus |
USD405431S (en) * | 1997-08-20 | 1999-02-09 | Tokyo Electron Ltd. | Tube for use in a semiconductor wafer heat processing apparatus |
US5948300A (en) * | 1997-09-12 | 1999-09-07 | Kokusai Bti Corporation | Process tube with in-situ gas preheating |
JP2000243747A (ja) * | 1999-02-18 | 2000-09-08 | Kokusai Electric Co Ltd | 基板処理装置 |
JP3985899B2 (ja) * | 2002-03-28 | 2007-10-03 | 株式会社日立国際電気 | 基板処理装置 |
JP5157100B2 (ja) * | 2006-08-04 | 2013-03-06 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
USD600659S1 (en) * | 2006-09-12 | 2009-09-22 | Tokyo Electron Limited | Process tube for manufacturing semiconductor wafers |
TWD125600S1 (zh) * | 2006-10-12 | 2008-10-21 | 東京威力科創股份有限公司 | 半導體製造用加工處理管 |
USD619630S1 (en) * | 2007-05-08 | 2010-07-13 | Tokyo Electron Limited | Process tube for manufacturing semiconductor wafers |
JP5096182B2 (ja) * | 2008-01-31 | 2012-12-12 | 東京エレクトロン株式会社 | 熱処理炉 |
TWD143034S1 (zh) * | 2008-03-28 | 2011-10-01 | 東京威力科創股份有限公司 | 半導體製造用處理管 |
JP4930438B2 (ja) * | 2008-04-03 | 2012-05-16 | 東京エレクトロン株式会社 | 反応管及び熱処理装置 |
TWD133943S1 (zh) * | 2008-05-09 | 2010-03-21 | 日立國際電氣股份有限公司 | 反應管 |
USD610559S1 (en) * | 2008-05-30 | 2010-02-23 | Hitachi Kokusai Electric, Inc. | Reaction tube |
USD725053S1 (en) * | 2011-11-18 | 2015-03-24 | Tokyo Electron Limited | Outer tube for process tube for manufacturing semiconductor wafers |
TWD167986S (zh) * | 2013-06-28 | 2015-05-21 | 日立國際電氣股份有限公司 | 反應管之部分 |
TWD167987S (zh) * | 2013-06-28 | 2015-05-21 | 日立國際電氣股份有限公司 | 反應管之部分 |
TWD167985S (zh) * | 2013-06-28 | 2015-05-21 | 日立國際電氣股份有限公司 | 反應管之部分 |
USD739832S1 (en) * | 2013-06-28 | 2015-09-29 | Hitachi Kokusai Electric Inc. | Reaction tube |
TWD168774S (zh) * | 2013-06-28 | 2015-07-01 | 日立國際電氣股份有限公司 | 反應管之部分 |
JP1535455S (fr) * | 2015-02-25 | 2015-10-19 | ||
JP1546345S (fr) * | 2015-09-04 | 2016-03-22 |
-
2015
- 2015-09-04 JP JPD2015-19682F patent/JP1546512S/ja active Active
-
2016
- 2016-02-25 US US29/555,822 patent/USD791090S1/en active Active
- 2016-03-02 TW TW105304215F patent/TWD181481S/zh unknown
Also Published As
Publication number | Publication date |
---|---|
USD791090S1 (en) | 2017-07-04 |
TWD181481S (zh) | 2017-02-21 |