ITMI20020793A0 - Memoria a semiconduttore feram - Google Patents

Memoria a semiconduttore feram

Info

Publication number
ITMI20020793A0
ITMI20020793A0 IT2002MI000793A ITMI20020793A ITMI20020793A0 IT MI20020793 A0 ITMI20020793 A0 IT MI20020793A0 IT 2002MI000793 A IT2002MI000793 A IT 2002MI000793A IT MI20020793 A ITMI20020793 A IT MI20020793A IT MI20020793 A0 ITMI20020793 A0 IT MI20020793A0
Authority
IT
Italy
Prior art keywords
semiconductor memory
memory feram
feram
semiconductor
memory
Prior art date
Application number
IT2002MI000793A
Other languages
English (en)
Inventor
Nicolas Demange
Salvatore Torrisi
Giampiero Sberno
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT2002MI000793A priority Critical patent/ITMI20020793A1/it
Publication of ITMI20020793A0 publication Critical patent/ITMI20020793A0/it
Priority to US10/414,252 priority patent/US6930907B2/en
Publication of ITMI20020793A1 publication Critical patent/ITMI20020793A1/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/4013—Memory devices with multiple cells per bit, e.g. twin-cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
IT2002MI000793A 2002-04-15 2002-04-15 Memoria a semiconduttore feram ITMI20020793A1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IT2002MI000793A ITMI20020793A1 (it) 2002-04-15 2002-04-15 Memoria a semiconduttore feram
US10/414,252 US6930907B2 (en) 2002-04-15 2003-04-14 FeRAM semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT2002MI000793A ITMI20020793A1 (it) 2002-04-15 2002-04-15 Memoria a semiconduttore feram

Publications (2)

Publication Number Publication Date
ITMI20020793A0 true ITMI20020793A0 (it) 2002-04-15
ITMI20020793A1 ITMI20020793A1 (it) 2003-10-15

Family

ID=11449704

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2002MI000793A ITMI20020793A1 (it) 2002-04-15 2002-04-15 Memoria a semiconduttore feram

Country Status (2)

Country Link
US (1) US6930907B2 (it)
IT (1) ITMI20020793A1 (it)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITMI20020673A1 (it) * 2002-03-29 2003-09-29 St Microelectronics Srl Metodo e relativo circuito di accesso a locazioni di una memoria ferroelettrica
JP4074279B2 (ja) * 2003-09-22 2008-04-09 株式会社東芝 半導体集積回路装置、デジタルカメラ、デジタルビデオカメラ、コンピュータシステム、携帯コンピュータシステム、論理可変ｌｓｉ装置、ｉｃカード、ナビゲーションシステム、ロボット、画像表示装置、光ディスク記憶装置
US7269048B2 (en) * 2003-09-22 2007-09-11 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device
DE602005010403D1 (de) * 2005-05-25 2008-11-27 St Microelectronics Srl Entladeschaltung für einen wortweise löschbaren Flash-Speicher
JP6091083B2 (ja) * 2011-05-20 2017-03-08 株式会社半導体エネルギー研究所 記憶装置
TWI511238B (zh) * 2013-12-12 2015-12-01 Nat Univ Chung Hsing Mixed memory
WO2018044458A1 (en) * 2016-08-31 2018-03-08 Micron Technology, Inc. Memory arrays
WO2018044453A1 (en) 2016-08-31 2018-03-08 Micron Technology, Inc. Memory cells and memory arrays
KR102195321B1 (ko) 2016-08-31 2020-12-24 마이크론 테크놀로지, 인크 감지 증폭기 구성물
KR102134532B1 (ko) 2016-08-31 2020-07-20 마이크론 테크놀로지, 인크 메모리 셀들 및 메모리 어레이들
EP3507831B1 (en) 2016-08-31 2021-03-03 Micron Technology, Inc. Memory arrays
US10355002B2 (en) 2016-08-31 2019-07-16 Micron Technology, Inc. Memory cells, methods of forming an array of two transistor-one capacitor memory cells, and methods used in fabricating integrated circuitry
KR102208380B1 (ko) 2016-08-31 2021-01-28 마이크론 테크놀로지, 인크 메모리 셀들 및 메모리 어레이들
US11211384B2 (en) 2017-01-12 2021-12-28 Micron Technology, Inc. Memory cells, arrays of two transistor-one capacitor memory cells, methods of forming an array of two transistor-one capacitor memory cells, and methods used in fabricating integrated circuitry
KR102359067B1 (ko) 2017-08-29 2022-02-08 마이크론 테크놀로지, 인크 메모리 회로
US10867653B2 (en) * 2018-04-20 2020-12-15 Micron Technology, Inc. Access schemes for protecting stored data in a memory device
US10622050B2 (en) 2018-05-09 2020-04-14 Micron Technology, Inc. Ferroelectric memory plate power reduction

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6028783A (en) * 1997-11-14 2000-02-22 Ramtron International Corporation Memory cell configuration for a 1T/1C ferroelectric memory
US6091622A (en) * 1997-12-12 2000-07-18 Lg Semicon Co., Ltd. Nonvolatile ferroelectric memory device
KR100301930B1 (ko) * 1999-06-10 2001-11-01 윤종용 세그먼트 플레이트 라인 스킴을 갖는 불휘발성 강유전체 랜덤액세스 메모리 장치 및 플레이트 라인 세그먼트 구동 방법
KR100339413B1 (ko) * 1999-08-16 2002-05-31 박종섭 불휘발성 강유전체 메모리 소자의 구동회로
KR100364791B1 (ko) * 1999-09-15 2002-12-16 주식회사 하이닉스반도체 로우 리던던시 회로를 구비한 비휘발성 강유전체 메모리 장치 및 그의 페일 어드레스 구제방법
US6330180B2 (en) * 2000-03-24 2001-12-11 Fujitsu Limited Semiconductor memory device with reduced power consumption and with reduced test time
JP2001319473A (ja) * 2000-05-12 2001-11-16 Oki Electric Ind Co Ltd 強誘電体メモリ装置およびその動作方法
JP4005764B2 (ja) * 2000-07-11 2007-11-14 株式会社東芝 半導体記憶装置
KR100381958B1 (ko) * 2000-10-30 2003-04-26 삼성전자주식회사 강유전체 램 장치
JP4329919B2 (ja) * 2001-03-13 2009-09-09 Ｏｋｉセミコンダクタ株式会社 半導体メモリおよび半導体メモリの駆動方法

Also Published As

Publication number Publication date
US6930907B2 (en) 2005-08-16
ITMI20020793A1 (it) 2003-10-15
US20030234413A1 (en) 2003-12-25

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