IT9009454A0 - Cella di memoria statica ad accesso casuale a quattro transistori - Google Patents
Cella di memoria statica ad accesso casuale a quattro transistoriInfo
- Publication number
- IT9009454A0 IT9009454A0 IT909454A IT945490A IT9009454A0 IT 9009454 A0 IT9009454 A0 IT 9009454A0 IT 909454 A IT909454 A IT 909454A IT 945490 A IT945490 A IT 945490A IT 9009454 A0 IT9009454 A0 IT 9009454A0
- Authority
- IT
- Italy
- Prior art keywords
- memory cell
- random access
- static memory
- transistor random
- access static
- Prior art date
Links
- 230000003068 static effect Effects 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/418—Address circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/903—FET configuration adapted for use as static memory cell
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/390,086 US5020028A (en) | 1989-08-07 | 1989-08-07 | Four transistor static RAM cell |
Publications (3)
Publication Number | Publication Date |
---|---|
IT9009454A0 true IT9009454A0 (it) | 1990-08-03 |
IT9009454A1 IT9009454A1 (it) | 1991-02-08 |
IT1245983B IT1245983B (it) | 1994-11-07 |
Family
ID=23540990
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT00945490A IT1245983B (it) | 1989-08-07 | 1990-08-03 | Cella di memoria statica ad accesso casuale a quattro transistori |
Country Status (7)
Country | Link |
---|---|
US (1) | US5020028A (it) |
JP (1) | JPH0482080A (it) |
CA (1) | CA2012668C (it) |
DE (1) | DE4014228A1 (it) |
FR (1) | FR2650694B3 (it) |
GB (1) | GB2234873B (it) |
IT (1) | IT1245983B (it) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5264741A (en) * | 1992-06-19 | 1993-11-23 | Aptix Corporation | Low current, fast, CMOS static pullup circuit for static random-access memories |
KR0121992B1 (ko) * | 1993-03-03 | 1997-11-12 | 모리시다 요이치 | 반도체장치 및 그 제조방법 |
US5475633A (en) * | 1994-06-01 | 1995-12-12 | Intel Corporation | Cache memory utilizing pseudo static four transistor memory cell |
US5793671A (en) * | 1997-01-21 | 1998-08-11 | Advanced Micro Devices, Inc. | Static random access memory cell utilizing enhancement mode N-channel transistors as load elements |
US5881010A (en) * | 1997-05-15 | 1999-03-09 | Stmicroelectronics, Inc. | Multiple transistor dynamic random access memory array architecture with simultaneous refresh of multiple memory cells during a read operation |
GB9721654D0 (en) * | 1997-10-14 | 1997-12-10 | Willey Robinson Ltd | Gas heating apparatus |
FR2769746B1 (fr) * | 1997-10-14 | 2000-01-28 | St Microelectronics Sa | Dispositif de memoire vive dynamique a duree de rafraichissement reduite, et procede correspondant de rafraichissement |
US6040991A (en) * | 1999-01-04 | 2000-03-21 | International Business Machines Corporation | SRAM memory cell having reduced surface area |
US6442060B1 (en) * | 2000-05-09 | 2002-08-27 | Monolithic System Technology, Inc. | High-density ratio-independent four-transistor RAM cell fabricated with a conventional logic process |
US6370052B1 (en) | 2000-07-19 | 2002-04-09 | Monolithic System Technology, Inc. | Method and structure of ternary CAM cell in logic process |
US6614124B1 (en) | 2000-11-28 | 2003-09-02 | International Business Machines Corporation | Simple 4T static ram cell for low power CMOS applications |
JP4219663B2 (ja) * | 2002-11-29 | 2009-02-04 | 株式会社ルネサステクノロジ | 半導体記憶装置及び半導体集積回路 |
US7403426B2 (en) * | 2005-05-25 | 2008-07-22 | Intel Corporation | Memory with dynamically adjustable supply |
JP5415672B2 (ja) * | 2006-12-19 | 2014-02-12 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US8213257B2 (en) * | 2010-08-09 | 2012-07-03 | Faraday Technology Corp. | Variation-tolerant word-line under-drive scheme for random access memory |
KR102003930B1 (ko) * | 2012-07-31 | 2019-07-25 | 삼성전자주식회사 | 불휘발성 메모리 장치의 데이터 라이팅 제어방법 및 웨어레벨링 제어 기능을 가지는 메모리 콘트롤러 |
US10614877B1 (en) | 2019-01-10 | 2020-04-07 | International Business Machines Corporation | 4T static random access memory bitcell retention |
US10885967B2 (en) * | 2019-01-14 | 2021-01-05 | Micron Technology, Inc. | Systems and methods for improving power efficiency in refreshing memory banks |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3541530A (en) * | 1968-01-15 | 1970-11-17 | Ibm | Pulsed power four device memory cell |
US3836892A (en) * | 1972-06-29 | 1974-09-17 | Ibm | D.c. stable electronic storage utilizing a.c. stable storage cell |
JPS5415736B2 (it) * | 1972-11-24 | 1979-06-16 | ||
JPS5615073B2 (it) * | 1973-10-11 | 1981-04-08 | ||
JPS5140830A (it) * | 1974-10-04 | 1976-04-06 | Nippon Electric Co | |
US3949383A (en) * | 1974-12-23 | 1976-04-06 | Ibm Corporation | D. C. Stable semiconductor memory cell |
US4023149A (en) * | 1975-10-28 | 1977-05-10 | Motorola, Inc. | Static storage technique for four transistor IGFET memory cell |
US4334293A (en) * | 1978-07-19 | 1982-06-08 | Texas Instruments Incorporated | Semiconductor memory cell with clocked voltage supply from data lines |
JPS62273694A (ja) * | 1986-05-22 | 1987-11-27 | Sony Corp | センスアンプ |
JPS6381694A (ja) * | 1986-09-26 | 1988-04-12 | Sony Corp | メモリセル回路 |
US4796227A (en) * | 1987-03-17 | 1989-01-03 | Schlumberger Systems And Services, Inc. | Computer memory system |
-
1989
- 1989-08-07 US US07/390,086 patent/US5020028A/en not_active Expired - Lifetime
-
1990
- 1990-03-21 CA CA002012668A patent/CA2012668C/en not_active Expired - Fee Related
- 1990-04-20 GB GB9008961A patent/GB2234873B/en not_active Expired - Fee Related
- 1990-05-03 DE DE4014228A patent/DE4014228A1/de not_active Withdrawn
- 1990-05-03 FR FR909005570A patent/FR2650694B3/fr not_active Expired - Lifetime
- 1990-07-11 JP JP2181705A patent/JPH0482080A/ja active Pending
- 1990-08-03 IT IT00945490A patent/IT1245983B/it active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
FR2650694B3 (fr) | 1991-11-29 |
CA2012668C (en) | 2000-08-01 |
JPH0482080A (ja) | 1992-03-16 |
GB2234873B (en) | 1994-07-27 |
FR2650694A1 (fr) | 1991-02-08 |
US5020028A (en) | 1991-05-28 |
IT9009454A1 (it) | 1991-02-08 |
CA2012668A1 (en) | 1991-02-07 |
DE4014228A1 (de) | 1991-02-14 |
GB9008961D0 (en) | 1990-06-20 |
IT1245983B (it) | 1994-11-07 |
GB2234873A (en) | 1991-02-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IT9009454A0 (it) | Cella di memoria statica ad accesso casuale a quattro transistori | |
NL193124B (nl) | Statische willekeurig toegankelijke geheugeninrichting. | |
DE68908937T2 (de) | Speicher und statische Speicherzelle; Speicherungsverfahren. | |
DE69319836D1 (de) | Gegen Soft-Fehler resistenter statischer Direktzugriffspeicher | |
DE59010020D1 (de) | Statische Speicherzelle | |
DE69121483T2 (de) | Dynamische Halbleiterspeicherzelle | |
IT1160500B (it) | Memoria ad accesso casuale mosdinamica | |
DE69329788T2 (de) | Direktzugriffspeicherentwurf | |
DE69121760D1 (de) | Halbleiterspeicherzelle | |
DE3876415T2 (de) | Dynamischer direktzugriffsspeicher. | |
KR880700425A (ko) | 스태틱 랜덤 엑세스 메모리 | |
DE69322734D1 (de) | Synchroner statischer Speicher mit wahlfreien Zugriff | |
DE69233082D1 (de) | Statische Direktzugriffsspeicheranordnung | |
DE69027886D1 (de) | Direktzugriffsspeicher vom dynamischen Typ | |
GB2212683B (en) | Static random access memories | |
DE3851416D1 (de) | Statische Direktzugriffshalbleiterspeicheranordnung. | |
DE68919718T2 (de) | Pseudo-statischer Direktzugriffspeicher. | |
IT8067197A0 (it) | Dispositivo di memoria dinamica ad accesso casuale | |
DE69125542T2 (de) | Dynamischer Direktzugriffspeicher | |
IT1151245B (it) | Dispositivo do memoria a semiconduttori in particolare memoria ad accesso casuale dinamica | |
DE69124010T2 (de) | Halbleiterspeicherzelle | |
GB8920522D0 (en) | Static random access memory | |
EP0590591A3 (en) | Static RAM memory for gate matrix devices. | |
DE69132402T2 (de) | Zellmatrix für nichtflüchtige Halbleiter-Speichervorrichtungen | |
DE68918894T2 (de) | Statische MESFET-Speicherzelle mit wahlfreiem Zugriff. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
0001 | Granted | ||
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19980828 |