IT8420572A1 - "Contatto legato per materiale semiconduttivo al GaALAs con conduttività di tipo n" - Google Patents
"Contatto legato per materiale semiconduttivo al GaALAs con conduttività di tipo n"Info
- Publication number
- IT8420572A1 IT8420572A1 IT1984A20572A IT2057284A IT8420572A1 IT 8420572 A1 IT8420572 A1 IT 8420572A1 IT 1984A20572 A IT1984A20572 A IT 1984A20572A IT 2057284 A IT2057284 A IT 2057284A IT 8420572 A1 IT8420572 A1 IT 8420572A1
- Authority
- IT
- Italy
- Prior art keywords
- gaalas
- type conductivity
- semiconductive material
- bonded contact
- bonded
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3318683A DE3318683C1 (de) | 1983-05-21 | 1983-05-21 | Legierter Kontakt für n-leitendes GaAlAs-Halbleitermaterial |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| IT8420572A0 IT8420572A0 (it) | 1984-04-17 |
| IT8420572A1 true IT8420572A1 (it) | 1985-10-17 |
| IT1176068B IT1176068B (it) | 1987-08-12 |
Family
ID=6199662
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT20572/84A IT1176068B (it) | 1983-05-21 | 1984-04-17 | Contatto legato per materiale semiconduttivo al gaa as conconduttuvita' di tipo "n" |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4613890A (it) |
| JP (1) | JPS59220967A (it) |
| DE (1) | DE3318683C1 (it) |
| FR (1) | FR2546334B1 (it) |
| IT (1) | IT1176068B (it) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0722141B2 (ja) * | 1984-03-07 | 1995-03-08 | 住友電気工業株式会社 | 半導体素子の製造方法 |
| JPS61107726A (ja) * | 1984-10-30 | 1986-05-26 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 化合物半導体への接点の製造方法 |
| JPH0658897B2 (ja) | 1984-11-29 | 1994-08-03 | 三洋電機株式会社 | ｎ型ＧａＡｓ及びｎ型ＧａＡ▲ｌ▼Ａｓ用オーミック電極の製造方法 |
| US5045408A (en) * | 1986-09-19 | 1991-09-03 | University Of California | Thermodynamically stabilized conductor/compound semiconductor interfaces |
| DE3908083A1 (de) * | 1989-03-13 | 1990-09-20 | Telefunken Electronic Gmbh | Silizium-halbleiterbauelement |
| US6262440B1 (en) * | 1998-06-29 | 2001-07-17 | Philips Electronics North America Corp. | Metal electrical contact for high current density applications in LED and laser devices |
| US20150181650A1 (en) * | 2013-12-20 | 2015-06-25 | Research & Business Foundation Sungkyunkwan University | Graphene microheater and method of manufacturing the same |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3574680A (en) * | 1968-05-07 | 1971-04-13 | Ibm | High-low ohmic contact deposition method |
| HU163255B (it) * | 1971-09-17 | 1973-07-28 | ||
| GB1558764A (en) * | 1976-11-15 | 1980-01-09 | Ferranti Ltd | Formation of contacts for semiconductor devices |
| GB1574525A (en) * | 1977-04-13 | 1980-09-10 | Philips Electronic Associated | Method of manufacturing semiconductor devices and semiconductor devices manufactured by the method |
| FR2402944A1 (fr) * | 1977-09-12 | 1979-04-06 | Thomson Csf | Procede de realisation d'un compose superficiel entre un substrat et une espece reactive |
| FR2413780A1 (fr) * | 1977-12-29 | 1979-07-27 | Thomson Csf | Procede de realisation d'un contact " metal-semi-conducteur " a barriere de potentiel de hauteur predeterminee, et composant semi-conducteur comportant au moins un contact obtenu par ce procede |
| US4179534A (en) * | 1978-05-24 | 1979-12-18 | Bell Telephone Laboratories, Incorporated | Gold-tin-gold ohmic contact to N-type group III-V semiconductors |
| JPS5516429A (en) * | 1978-07-21 | 1980-02-05 | Seiko Instr & Electronics Ltd | Electrode for ga1-x a xas |
| JPS56116619A (en) * | 1980-02-20 | 1981-09-12 | Matsushita Electric Ind Co Ltd | Electrode formation to gallium aluminum arsenic crystal |
| JPS5830170A (ja) * | 1981-08-15 | 1983-02-22 | Stanley Electric Co Ltd | 化合物半導体素子およびその電極形成法 |
-
1983
- 1983-05-21 DE DE3318683A patent/DE3318683C1/de not_active Expired
-
1984
- 1984-04-17 IT IT20572/84A patent/IT1176068B/it active
- 1984-05-10 US US06/608,725 patent/US4613890A/en not_active Expired - Fee Related
- 1984-05-18 JP JP59098924A patent/JPS59220967A/ja active Pending
- 1984-05-21 FR FR8407878A patent/FR2546334B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2546334A1 (fr) | 1984-11-23 |
| FR2546334B1 (fr) | 1986-12-26 |
| US4613890A (en) | 1986-09-23 |
| IT8420572A0 (it) | 1984-04-17 |
| DE3318683C1 (de) | 1984-12-13 |
| IT1176068B (it) | 1987-08-12 |
| JPS59220967A (ja) | 1984-12-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3588011T2 (de) | Halbleiteranordnung mit epitaxialem Material. | |
| DE3574646D1 (de) | Thermoplastisches elektrisch leitendes material. | |
| DE3374153D1 (en) | Electrical contact materials | |
| DE3685253D1 (de) | Dichtungsmaterial. | |
| DE3577465D1 (de) | Pumpeinrichtung fuer fliessfaehiges feststoffmaterial. | |
| DK397483D0 (da) | Sorbitolholdige harde bolsjer | |
| DE3586531T2 (de) | Kontaktlinsenmaterial. | |
| EP0216352A3 (en) | Semiconductor element sealing structure | |
| EP0176087A3 (en) | Semiconductor superlattice structure | |
| FR2533167B1 (fr) | Matiere d'enregistrement thermosensible | |
| IT8420572A1 (it) | "Contatto legato per materiale semiconduttivo al GaALAs con conduttività di tipo n" | |
| DE3686407D1 (de) | Titannitrid-elektroden fuer thermoelektrische generatoren. | |
| NO814101L (no) | Material for elektriske kontakter | |
| EP0146928A3 (en) | Power semiconductor device with mesa type structure | |
| GB2182674B (en) | Electrical contact material | |
| DE3579611D1 (de) | Leitermaterialien fuer halbleiteranordnungen. | |
| DE3565342D1 (en) | Double heterostructure light-emitting semiconductor device | |
| IT1175956B (it) | Dispositivo per l'alimentazione di pezzi, in particolare di montaggio | |
| DE3688126D1 (de) | Material fuer aufzeichnung mit hoher dichte. | |
| DE3474740D1 (en) | Improved electrically conductive materials for devices | |
| DE3671330D1 (de) | Verbindung aus formgedaechtnismaterial zum verbinden von elektrischen kontaktzonen. | |
| IT1163932B (it) | Procedimento per produrre materiale semiconduttore molto drogato | |
| FR2521129B1 (fr) | Matiere isolante | |
| GB2162366B (en) | Semiconductor device contact arrangements | |
| IT1218666B (it) | Materiale sintetico elettricamente conduttivo |