IT1163932B - Procedimento per produrre materiale semiconduttore molto drogato - Google Patents

Procedimento per produrre materiale semiconduttore molto drogato

Info

Publication number
IT1163932B
IT1163932B IT22636/83A IT2263683A IT1163932B IT 1163932 B IT1163932 B IT 1163932B IT 22636/83 A IT22636/83 A IT 22636/83A IT 2263683 A IT2263683 A IT 2263683A IT 1163932 B IT1163932 B IT 1163932B
Authority
IT
Italy
Prior art keywords
droged
procedure
produce
semiconductor material
semiconductor
Prior art date
Application number
IT22636/83A
Other languages
English (en)
Other versions
IT8322636A0 (it
Inventor
Konrad Reushel
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of IT8322636A0 publication Critical patent/IT8322636A0/it
Application granted granted Critical
Publication of IT1163932B publication Critical patent/IT1163932B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Light Receiving Elements (AREA)
IT22636/83A 1982-08-30 1983-08-25 Procedimento per produrre materiale semiconduttore molto drogato IT1163932B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19823232259 DE3232259A1 (de) 1982-08-30 1982-08-30 Verfahren zum herstellen von halbleitermaterial hoher dotierung

Publications (2)

Publication Number Publication Date
IT8322636A0 IT8322636A0 (it) 1983-08-25
IT1163932B true IT1163932B (it) 1987-04-08

Family

ID=6172078

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22636/83A IT1163932B (it) 1982-08-30 1983-08-25 Procedimento per produrre materiale semiconduttore molto drogato

Country Status (4)

Country Link
JP (1) JPS5958000A (it)
DE (1) DE3232259A1 (it)
FR (1) FR2532335A1 (it)
IT (1) IT1163932B (it)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0350845A3 (en) * 1988-07-12 1991-05-29 Seiko Epson Corporation Semiconductor device with doped regions and method for manufacturing it
US5553566A (en) * 1995-06-22 1996-09-10 Motorola Inc. Method of eliminating dislocations and lowering lattice strain for highly doped N+ substrates
DE19953883A1 (de) * 1999-11-09 2001-05-23 Infineon Technologies Ag Anordnung zur Reduzierung des Einschaltwiderstandes von p- oder n-Kanal-Feldeffekttransistoren
DE102004039197B4 (de) * 2004-08-12 2010-06-17 Siltronic Ag Verfahren zur Herstellung von dotierten Halbleiterscheiben aus Silizium
JP4516096B2 (ja) 2007-05-31 2010-08-04 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶の製造方法
DE102008013325B4 (de) 2008-03-10 2011-12-01 Siltronic Ag Halbleiterscheibe aus einkristallinem Silicium und Verfahren zu deren Herstellung
CN114262231B (zh) * 2021-12-16 2022-09-23 江苏诺明高温材料股份有限公司 一种石灰窑用的内衬耐火材料及其制备方法

Also Published As

Publication number Publication date
DE3232259A1 (de) 1984-03-01
IT8322636A0 (it) 1983-08-25
JPS5958000A (ja) 1984-04-03
FR2532335A1 (fr) 1984-03-02

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