JPS5958000A - 無転位単結晶半導体材料の製造方法 - Google Patents

無転位単結晶半導体材料の製造方法

Info

Publication number
JPS5958000A
JPS5958000A JP58155693A JP15569383A JPS5958000A JP S5958000 A JPS5958000 A JP S5958000A JP 58155693 A JP58155693 A JP 58155693A JP 15569383 A JP15569383 A JP 15569383A JP S5958000 A JPS5958000 A JP S5958000A
Authority
JP
Japan
Prior art keywords
silicon
doped
substance
compensated
doping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58155693A
Other languages
English (en)
Japanese (ja)
Inventor
コンラ−ト・ロイシエル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of JPS5958000A publication Critical patent/JPS5958000A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Light Receiving Elements (AREA)
JP58155693A 1982-08-30 1983-08-25 無転位単結晶半導体材料の製造方法 Pending JPS5958000A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE32322593 1982-08-30
DE19823232259 DE3232259A1 (de) 1982-08-30 1982-08-30 Verfahren zum herstellen von halbleitermaterial hoher dotierung

Publications (1)

Publication Number Publication Date
JPS5958000A true JPS5958000A (ja) 1984-04-03

Family

ID=6172078

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58155693A Pending JPS5958000A (ja) 1982-08-30 1983-08-25 無転位単結晶半導体材料の製造方法

Country Status (4)

Country Link
JP (1) JPS5958000A (it)
DE (1) DE3232259A1 (it)
FR (1) FR2532335A1 (it)
IT (1) IT1163932B (it)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101028443B1 (ko) 2008-03-10 2011-04-14 실트로닉 아게 단결정 규소로 구성된 반도체 웨이퍼 및 그 제조 방법
CN114262231A (zh) * 2021-12-16 2022-04-01 江苏诺明高温材料股份有限公司 一种石灰窑用的内衬耐火材料及其制备方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0350845A3 (en) * 1988-07-12 1991-05-29 Seiko Epson Corporation Semiconductor device with doped regions and method for manufacturing it
US5553566A (en) * 1995-06-22 1996-09-10 Motorola Inc. Method of eliminating dislocations and lowering lattice strain for highly doped N+ substrates
DE19953883A1 (de) * 1999-11-09 2001-05-23 Infineon Technologies Ag Anordnung zur Reduzierung des Einschaltwiderstandes von p- oder n-Kanal-Feldeffekttransistoren
DE102004039197B4 (de) * 2004-08-12 2010-06-17 Siltronic Ag Verfahren zur Herstellung von dotierten Halbleiterscheiben aus Silizium
JP4516096B2 (ja) 2007-05-31 2010-08-04 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101028443B1 (ko) 2008-03-10 2011-04-14 실트로닉 아게 단결정 규소로 구성된 반도체 웨이퍼 및 그 제조 방법
CN114262231A (zh) * 2021-12-16 2022-04-01 江苏诺明高温材料股份有限公司 一种石灰窑用的内衬耐火材料及其制备方法

Also Published As

Publication number Publication date
FR2532335A1 (fr) 1984-03-02
IT8322636A0 (it) 1983-08-25
IT1163932B (it) 1987-04-08
DE3232259A1 (de) 1984-03-01

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