FR2546334B1 - Contact allie pour materiau semi-conducteur a l'arseniure de gallium-aluminium a conduction du type n - Google Patents
Contact allie pour materiau semi-conducteur a l'arseniure de gallium-aluminium a conduction du type nInfo
- Publication number
- FR2546334B1 FR2546334B1 FR8407878A FR8407878A FR2546334B1 FR 2546334 B1 FR2546334 B1 FR 2546334B1 FR 8407878 A FR8407878 A FR 8407878A FR 8407878 A FR8407878 A FR 8407878A FR 2546334 B1 FR2546334 B1 FR 2546334B1
- Authority
- FR
- France
- Prior art keywords
- semiconductor material
- aluminum arsenide
- alloy contact
- conductive gallium
- gallium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000956 alloy Substances 0.000 title 1
- 229910045601 alloy Inorganic materials 0.000 title 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 title 1
- 239000000463 material Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3318683A DE3318683C1 (de) | 1983-05-21 | 1983-05-21 | Legierter Kontakt für n-leitendes GaAlAs-Halbleitermaterial |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2546334A1 FR2546334A1 (fr) | 1984-11-23 |
FR2546334B1 true FR2546334B1 (fr) | 1986-12-26 |
Family
ID=6199662
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8407878A Expired FR2546334B1 (fr) | 1983-05-21 | 1984-05-21 | Contact allie pour materiau semi-conducteur a l'arseniure de gallium-aluminium a conduction du type n |
Country Status (5)
Country | Link |
---|---|
US (1) | US4613890A (fr) |
JP (1) | JPS59220967A (fr) |
DE (1) | DE3318683C1 (fr) |
FR (1) | FR2546334B1 (fr) |
IT (1) | IT1176068B (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0658897B2 (ja) | 1984-11-29 | 1994-08-03 | 三洋電機株式会社 | n型GaAs及びn型GaA▲l▼As用オーミック電極の製造方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0722141B2 (ja) * | 1984-03-07 | 1995-03-08 | 住友電気工業株式会社 | 半導体素子の製造方法 |
JPS61107726A (ja) * | 1984-10-30 | 1986-05-26 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 化合物半導体への接点の製造方法 |
US5045408A (en) * | 1986-09-19 | 1991-09-03 | University Of California | Thermodynamically stabilized conductor/compound semiconductor interfaces |
DE3908083A1 (de) * | 1989-03-13 | 1990-09-20 | Telefunken Electronic Gmbh | Silizium-halbleiterbauelement |
US6262440B1 (en) * | 1998-06-29 | 2001-07-17 | Philips Electronics North America Corp. | Metal electrical contact for high current density applications in LED and laser devices |
US20150181650A1 (en) * | 2013-12-20 | 2015-06-25 | Research & Business Foundation Sungkyunkwan University | Graphene microheater and method of manufacturing the same |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3574680A (en) * | 1968-05-07 | 1971-04-13 | Ibm | High-low ohmic contact deposition method |
HU163255B (fr) * | 1971-09-17 | 1973-07-28 | ||
GB1558764A (en) * | 1976-11-15 | 1980-01-09 | Ferranti Ltd | Formation of contacts for semiconductor devices |
GB1574525A (en) * | 1977-04-13 | 1980-09-10 | Philips Electronic Associated | Method of manufacturing semiconductor devices and semiconductor devices manufactured by the method |
FR2402944A1 (fr) * | 1977-09-12 | 1979-04-06 | Thomson Csf | Procede de realisation d'un compose superficiel entre un substrat et une espece reactive |
FR2413780A1 (fr) * | 1977-12-29 | 1979-07-27 | Thomson Csf | Procede de realisation d'un contact " metal-semi-conducteur " a barriere de potentiel de hauteur predeterminee, et composant semi-conducteur comportant au moins un contact obtenu par ce procede |
US4179534A (en) * | 1978-05-24 | 1979-12-18 | Bell Telephone Laboratories, Incorporated | Gold-tin-gold ohmic contact to N-type group III-V semiconductors |
JPS5516429A (en) * | 1978-07-21 | 1980-02-05 | Seiko Instr & Electronics Ltd | Electrode for ga1-x a xas |
JPS56116619A (en) * | 1980-02-20 | 1981-09-12 | Matsushita Electric Ind Co Ltd | Electrode formation to gallium aluminum arsenic crystal |
JPS5830170A (ja) * | 1981-08-15 | 1983-02-22 | Stanley Electric Co Ltd | 化合物半導体素子およびその電極形成法 |
-
1983
- 1983-05-21 DE DE3318683A patent/DE3318683C1/de not_active Expired
-
1984
- 1984-04-17 IT IT20572/84A patent/IT1176068B/it active
- 1984-05-10 US US06/608,725 patent/US4613890A/en not_active Expired - Fee Related
- 1984-05-18 JP JP59098924A patent/JPS59220967A/ja active Pending
- 1984-05-21 FR FR8407878A patent/FR2546334B1/fr not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0658897B2 (ja) | 1984-11-29 | 1994-08-03 | 三洋電機株式会社 | n型GaAs及びn型GaA▲l▼As用オーミック電極の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
IT1176068B (it) | 1987-08-12 |
DE3318683C1 (de) | 1984-12-13 |
IT8420572A0 (it) | 1984-04-17 |
IT8420572A1 (it) | 1985-10-17 |
FR2546334A1 (fr) | 1984-11-23 |
JPS59220967A (ja) | 1984-12-12 |
US4613890A (en) | 1986-09-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |