IT1209400B - Memoria perfezionata. - Google Patents

Memoria perfezionata.

Info

Publication number
IT1209400B
IT1209400B IT7928132A IT2813279A IT1209400B IT 1209400 B IT1209400 B IT 1209400B IT 7928132 A IT7928132 A IT 7928132A IT 2813279 A IT2813279 A IT 2813279A IT 1209400 B IT1209400 B IT 1209400B
Authority
IT
Italy
Prior art keywords
switching means
transistor switching
bit line
individual
discharge
Prior art date
Application number
IT7928132A
Other languages
English (en)
Other versions
IT7928132A0 (it
Inventor
Heuber Klaus
Wiedmann Siegfried Kurt
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of IT7928132A0 publication Critical patent/IT7928132A0/it
Application granted granted Critical
Publication of IT1209400B publication Critical patent/IT1209400B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
    • G11C11/4026—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh using bipolar transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/416—Read-write [R-W] circuits 

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Polyamides (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
IT7928132A 1978-12-22 1979-12-18 Memoria perfezionata. IT1209400B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2855866A DE2855866C3 (de) 1978-12-22 1978-12-22 Verfahren und Schaltungsanordnung zum Betreiben eines integrierten Halbleiterspeichers

Publications (2)

Publication Number Publication Date
IT7928132A0 IT7928132A0 (it) 1979-12-18
IT1209400B true IT1209400B (it) 1989-07-16

Family

ID=6058191

Family Applications (1)

Application Number Title Priority Date Filing Date
IT7928132A IT1209400B (it) 1978-12-22 1979-12-18 Memoria perfezionata.

Country Status (6)

Country Link
US (1) US4280198A (it)
EP (1) EP0013302B1 (it)
JP (1) JPS5587379A (it)
AT (1) ATE2702T1 (it)
DE (2) DE2855866C3 (it)
IT (1) IT1209400B (it)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2926050C2 (de) * 1979-06-28 1981-10-01 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren und Schaltungsanordnung zum Lesen Und/oder Schreiben eines integrierten Halbleiterspeichers mit Speicherzellen in MTL-Technik
DE2926094A1 (de) * 1979-06-28 1981-01-08 Ibm Deutschland Verfahren und schaltungsanordnung zum entladen von bitleitungskapazitaeten eines integrierten halbleiterspeichers
DE2929384C2 (de) * 1979-07-20 1981-07-30 Ibm Deutschland Gmbh, 7000 Stuttgart Nachladeschaltung für einen Halbleiterspeicher
DE2951945A1 (de) * 1979-12-22 1981-07-02 Ibm Deutschland Gmbh, 7000 Stuttgart Schaltungsanordnung zur kapazitiven lesesignalverstaerkung in einem integrierten halbleiterspeicher mit einem intergrierten halbleiterspeicher mit speicherzellen in mtl-technik
US4302823A (en) * 1979-12-27 1981-11-24 International Business Machines Corp. Differential charge sensing system
US4404662A (en) * 1981-07-06 1983-09-13 International Business Machines Corporation Method and circuit for accessing an integrated semiconductor memory
JPS5819794A (ja) * 1981-07-29 1983-02-04 Fujitsu Ltd 半導体メモリ
US4555776A (en) * 1982-04-19 1985-11-26 International Business Machines Corporation Voltage balancing circuit for memory systems
JPS5948890A (ja) * 1982-09-10 1984-03-21 Nec Corp メモリ回路
DE3380678D1 (en) * 1983-05-25 1989-11-09 Ibm Deutschland Semiconductor memory
US4601016A (en) * 1983-06-24 1986-07-15 Honeywell Inc. Semiconductor memory cell
US4764902A (en) * 1985-07-01 1988-08-16 Nec Corporation Memory circuit with improved word line noise preventing circuits

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3540010A (en) * 1968-08-27 1970-11-10 Bell Telephone Labor Inc Diode-coupled semiconductive memory
US3815106A (en) * 1972-05-11 1974-06-04 S Wiedmann Flip-flop memory cell arrangement
DE2021824C3 (de) * 1970-05-05 1980-08-14 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithische Halbleiterschaltung
US3816758A (en) * 1971-04-14 1974-06-11 Ibm Digital logic circuit
US3736574A (en) * 1971-12-30 1973-05-29 Ibm Pseudo-hierarchy memory system
US3786442A (en) * 1972-02-24 1974-01-15 Cogar Corp Rapid recovery circuit for capacitively loaded bit lines
US3789243A (en) * 1972-07-05 1974-01-29 Ibm Monolithic memory sense amplifier/bit driver having active bit/sense line pull-up
NL7309453A (nl) * 1973-07-06 1975-01-08 Philips Nv Geheugenmatrix.
FR2304991A1 (fr) * 1975-03-15 1976-10-15 Ibm Agencement de circuits pour memoire semi-conductrice et son procede de fonctionnement
US4021786A (en) * 1975-10-30 1977-05-03 Fairchild Camera And Instrument Corporation Memory cell circuit and semiconductor structure therefore
US4032902A (en) * 1975-10-30 1977-06-28 Fairchild Camera And Instrument Corporation An improved semiconductor memory cell circuit and structure
DE2612666C2 (de) * 1976-03-25 1982-11-18 Ibm Deutschland Gmbh, 7000 Stuttgart Integrierte, invertierende logische Schaltung
DE2657561B1 (de) * 1976-12-18 1978-04-13 Ibm Deutschland Nachlade-Referenzschaltungsanordnung fuer einen Halbleiterspeicher
US4112511A (en) * 1977-09-13 1978-09-05 Signetics Corporation Four transistor static bipolar memory cell using merged transistors
DE2816949C3 (de) * 1978-04-19 1981-07-16 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte Halbleiteranordnung und deren Verwendung zum Aufbau einer Speicheranordnung

Also Published As

Publication number Publication date
JPS5757793B2 (it) 1982-12-06
DE2855866B2 (de) 1981-01-08
EP0013302B1 (de) 1983-03-02
DE2855866C3 (de) 1981-10-29
US4280198A (en) 1981-07-21
ATE2702T1 (de) 1983-03-15
JPS5587379A (en) 1980-07-02
DE2964971D1 (en) 1983-04-07
EP0013302A1 (de) 1980-07-23
IT7928132A0 (it) 1979-12-18
DE2855866A1 (de) 1980-06-26

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