ATE305173T1 - Statische speicherzelle - Google Patents

Statische speicherzelle

Info

Publication number
ATE305173T1
ATE305173T1 AT97938082T AT97938082T ATE305173T1 AT E305173 T1 ATE305173 T1 AT E305173T1 AT 97938082 T AT97938082 T AT 97938082T AT 97938082 T AT97938082 T AT 97938082T AT E305173 T1 ATE305173 T1 AT E305173T1
Authority
AT
Austria
Prior art keywords
memory cell
transistors
static memory
fabricated
word line
Prior art date
Application number
AT97938082T
Other languages
English (en)
Inventor
Monte Manning
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE305173T1 publication Critical patent/ATE305173T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices

Landscapes

  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
AT97938082T 1996-07-31 1997-07-31 Statische speicherzelle ATE305173T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/690,124 US5818750A (en) 1996-07-31 1996-07-31 Static memory cell
PCT/US1997/013498 WO1998005070A1 (en) 1996-07-31 1997-07-31 Static memory cell

Publications (1)

Publication Number Publication Date
ATE305173T1 true ATE305173T1 (de) 2005-10-15

Family

ID=24771200

Family Applications (1)

Application Number Title Priority Date Filing Date
AT97938082T ATE305173T1 (de) 1996-07-31 1997-07-31 Statische speicherzelle

Country Status (7)

Country Link
US (4) US5818750A (de)
EP (1) EP0916159B1 (de)
KR (2) KR100734982B1 (de)
AT (1) ATE305173T1 (de)
AU (1) AU4049197A (de)
DE (1) DE69734241T2 (de)
WO (1) WO1998005070A1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5818750A (en) * 1996-07-31 1998-10-06 Micron Technology, Inc. Static memory cell
US6174764B1 (en) 1997-05-12 2001-01-16 Micron Technology, Inc. Process for manufacturing integrated circuit SRAM
US6226748B1 (en) 1997-06-12 2001-05-01 Vpnet Technologies, Inc. Architecture for virtual private networks
US6301696B1 (en) 1999-03-30 2001-10-09 Actel Corporation Final design method of a programmable logic device that is based on an initial design that consists of a partial underlying physical template
US6446242B1 (en) 1999-04-02 2002-09-03 Actel Corporation Method and apparatus for storing a validation number in a field-programmable gate array
US6211697B1 (en) 1999-05-25 2001-04-03 Actel Integrated circuit that includes a field-programmable gate array and a hard gate array having the same underlying structure
US6295224B1 (en) 1999-12-30 2001-09-25 Stmicroelectronics, Inc. Circuit and method of fabricating a memory cell for a static random access memory
US20020055190A1 (en) * 2000-01-27 2002-05-09 Anthony Thomas C. Magnetic memory with structures that prevent disruptions to magnetization in sense layer
US6937063B1 (en) 2000-09-02 2005-08-30 Actel Corporation Method and apparatus of memory clearing with monitoring RAM memory cells in a field programmable gated array
US7029963B2 (en) * 2001-08-30 2006-04-18 Micron Technology, Inc. Semiconductor damascene trench and methods thereof
TW522526B (en) * 2002-01-31 2003-03-01 Brilliance Semiconductor Inc Method for improving the SRAM cell stability
US20030217223A1 (en) * 2002-05-14 2003-11-20 Infineon Technologies North America Corp. Combined command set
US20030214847A1 (en) * 2002-05-14 2003-11-20 Infineon Technologies North America Corp. Wordline pulldown circuit
US6879507B2 (en) * 2002-08-08 2005-04-12 Micron Technology, Inc. Conductive structure for microelectronic devices and methods of fabricating such structures
US6864712B2 (en) * 2003-04-28 2005-03-08 Stmicroelectronics Limited Hardening logic devices
US7141511B2 (en) * 2004-04-27 2006-11-28 Micron Technology Inc. Method and apparatus for fabricating a memory device with a dielectric etch stop layer
US9236383B2 (en) * 2004-04-27 2016-01-12 Micron Technology, Inc. Method and apparatus for fabricating a memory device with a dielectric etch stop layer
US7221605B2 (en) * 2004-08-31 2007-05-22 Micron Technology, Inc. Switched capacitor DRAM sense amplifier with immunity to mismatch and offsets
US7236415B2 (en) * 2004-09-01 2007-06-26 Micron Technology, Inc. Sample and hold memory sense amplifier
KR100629357B1 (ko) * 2004-11-29 2006-09-29 삼성전자주식회사 퓨즈 및 부하저항을 갖는 낸드 플래시메모리소자 형성방법
US7606057B2 (en) * 2006-05-31 2009-10-20 Arm Limited Metal line layout in a memory cell
KR101791577B1 (ko) 2011-01-17 2017-10-31 삼성디스플레이 주식회사 박막 트랜지스터 표시판

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0087979B1 (de) * 1982-03-03 1989-09-06 Fujitsu Limited Halbleiter-Speichervorrichtung
US5196910A (en) * 1987-04-24 1993-03-23 Hitachi, Ltd. Semiconductor memory device with recessed array region
US4868138A (en) * 1988-03-23 1989-09-19 Sgs-Thomson Microelectronics, Inc. Method for forming a self-aligned source/drain contact for an MOS transistor
JPH02209766A (ja) * 1988-10-14 1990-08-21 Seiko Epson Corp Ｍｉｓ集積回路装置
US5349206A (en) * 1988-11-10 1994-09-20 Seiko Epson Corporation Integrated memory circuit with high density load elements
US5126279A (en) * 1988-12-19 1992-06-30 Micron Technology, Inc. Single polysilicon cross-coupled resistor, six-transistor SRAM cell design technique
JPH0732202B2 (ja) * 1989-04-10 1995-04-10 セイコーエプソン株式会社 メモリセル
US5483104A (en) 1990-01-12 1996-01-09 Paradigm Technology, Inc. Self-aligning contact and interconnect structure
EP0469214A1 (de) * 1990-07-31 1992-02-05 International Business Machines Corporation Verfahren zur Herstellung geschichteter Leiter- und/oder Widerstandsbereiche in Multiebenen-Halbleiterbauelementen und daraus resultierende Struktur
JPH04345992A (ja) * 1991-05-24 1992-12-01 Fujitsu Ltd スタティックｒａｍ
US5241206A (en) * 1991-07-03 1993-08-31 Micron Technology, Inc. Self-aligned vertical intrinsic resistance
US5212399A (en) * 1991-08-15 1993-05-18 Micron Technology, Inc. Low cost polysilicon active p-channel load
US5273924A (en) * 1991-08-30 1993-12-28 Micron Technology, Inc. Method for forming an SRAM by minimizing diffusion of conductivity enhancing impurities from one region of a polysilicon layer to another region
US5215932A (en) * 1991-09-24 1993-06-01 Micron Technology, Inc. Self-aligned 3-dimensional PMOS devices without selective EPI
US5173754A (en) * 1992-02-03 1992-12-22 Micron Technology, Inc. Integrated circuit device with gate in sidewall
US5327394A (en) * 1992-02-04 1994-07-05 Micron Technology, Inc. Timing and control circuit for a static RAM responsive to an address transition pulse
EP0562207B1 (de) * 1992-03-27 1996-06-05 International Business Machines Corporation Verfahren zum Herstellen von pseudo-planaren Dünnschicht PFET-Anordnungen und hierdurch erzeugte Struktur
JPH0653442A (ja) * 1992-07-30 1994-02-25 Sony Corp Ｓｒａｍメモリーセル構造
US5379251A (en) 1992-05-15 1995-01-03 Sony Corporation Method and apparatus for static RAM
US5175127A (en) * 1992-06-02 1992-12-29 Micron Technology, Inc. Self-aligned interlayer contact process using a plasma etch of photoresist
KR940006273A (ko) 1992-06-20 1994-03-23 오가 노리오 스태틱램(sram) 장치 및 그 제조방법
JPH0621398A (ja) 1992-06-29 1994-01-28 Sony Corp Ｓｒａｍメモリーセル構造及びｓｒａｍメモリーセル構造の形成方法
JPH0653422A (ja) * 1992-07-28 1994-02-25 Hitachi Ltd 半導体集積回路装置及びその製造方法
US5240874A (en) * 1992-10-20 1993-08-31 Micron Semiconductor, Inc. Semiconductor wafer processing method of forming channel stops and method of forming SRAM circuitry
US5411909A (en) * 1993-02-22 1995-05-02 Micron Technology, Inc. Method of forming a planar thin film transistor
US5422499A (en) * 1993-02-22 1995-06-06 Micron Semiconductor, Inc. Sixteen megabit static random access memory (SRAM) cell
JPH06291281A (ja) 1993-03-31 1994-10-18 Sony Corp Ｓｒａｍメモリーセル構造及びその形成方法
US5390143A (en) * 1993-05-17 1995-02-14 Micron Semiconductor, Inc. Non-volatile static memory devices and operational methods
US5354704A (en) * 1993-07-28 1994-10-11 United Microelectronics Corporation Symmetric SRAM cell with buried N+ local interconnection line
JPH07130876A (ja) * 1993-11-05 1995-05-19 Sony Corp スタティック記憶セル
JPH07130877A (ja) * 1993-11-05 1995-05-19 Sony Corp 完全ｃｍｏｓ型スタティック記憶セル
JP3085073B2 (ja) * 1994-01-24 2000-09-04 富士通株式会社 スタティックｒａｍ
US5471421A (en) * 1994-12-16 1995-11-28 Sun Microsystems, Inc. Storage cell using low powered/low threshold CMOS pass transistors having reduced charge leakage
JP3446358B2 (ja) 1994-12-28 2003-09-16 ソニー株式会社 半導体記憶装置
JPH08250605A (ja) * 1995-03-07 1996-09-27 Hitachi Ltd 半導体集積回路装置
JPH08250673A (ja) * 1995-03-15 1996-09-27 Nec Corp 半導体装置
US5568435A (en) * 1995-04-12 1996-10-22 Micron Technology, Inc. Circuit for SRAM test mode isolated bitline modulation
US5545584A (en) * 1995-07-03 1996-08-13 Taiwan Semiconductor Manufacturing Company Unified contact plug process for static random access memory (SRAM) having thin film transistors
JPH1027475A (ja) * 1996-07-08 1998-01-27 Oki Micro Design Miyazaki:Kk 半導体集積回路装置
US5818750A (en) * 1996-07-31 1998-10-06 Micron Technology, Inc. Static memory cell

Also Published As

Publication number Publication date
US5940317A (en) 1999-08-17
AU4049197A (en) 1998-02-20
US6319800B1 (en) 2001-11-20
EP0916159B1 (de) 2005-09-21
KR20000029743A (ko) 2000-05-25
US6141239A (en) 2000-10-31
KR20030096454A (ko) 2003-12-31
DE69734241T2 (de) 2006-07-13
WO1998005070A1 (en) 1998-02-05
EP0916159A1 (de) 1999-05-19
KR100367382B1 (ko) 2003-01-08
US5818750A (en) 1998-10-06
DE69734241D1 (de) 2005-10-27
KR100734982B1 (ko) 2007-07-06

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Legal Events

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