JPS6430093A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS6430093A
JPS6430093A JP62183303A JP18330387A JPS6430093A JP S6430093 A JPS6430093 A JP S6430093A JP 62183303 A JP62183303 A JP 62183303A JP 18330387 A JP18330387 A JP 18330387A JP S6430093 A JPS6430093 A JP S6430093A
Authority
JP
Japan
Prior art keywords
switch circuits
signal lines
data
swn
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62183303A
Other languages
Japanese (ja)
Inventor
Yoshihide Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62183303A priority Critical patent/JPS6430093A/en
Publication of JPS6430093A publication Critical patent/JPS6430093A/en
Pending legal-status Critical Current

Links

Landscapes

  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To suppress the increase of an area due to signal lines of switch circuits for controlling the access direction of data by arranging the signal lines along the parallel direction of the switch circuits in the layout space of the switch circuits. CONSTITUTION:Plural switch circuits SW1-SWn for selectively connecting the data lines DX1-DX4 of the line direction and the data lines DY1-DY4 of the raw direction are arranged in a memory cell array MCA and the switching signal lines L1, L2 for executing the switch operation of the switch circuits SW1-SWn are extended along the parallel direction of the switch circuits SW1-SWn. Thereby, the signal lines L1, L2 do not exert the influence of data upon other parts such as the layout space of the memory cell in the memory cell array MCA. Consequently, the area increase due to the signal lines for the data access direction controlling switch circuit can be suppressed.
JP62183303A 1987-07-24 1987-07-24 Semiconductor storage device Pending JPS6430093A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62183303A JPS6430093A (en) 1987-07-24 1987-07-24 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62183303A JPS6430093A (en) 1987-07-24 1987-07-24 Semiconductor storage device

Publications (1)

Publication Number Publication Date
JPS6430093A true JPS6430093A (en) 1989-01-31

Family

ID=16133316

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62183303A Pending JPS6430093A (en) 1987-07-24 1987-07-24 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS6430093A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5114320A (en) * 1989-12-27 1992-05-19 Leybold Ag Blower or pump with capillary filter for replenishment of oil separated by vacuum pump
EP0589362A1 (en) * 1992-09-21 1994-03-30 Hitachi, Ltd. Vacuum pump apparatus
CN102671912A (en) * 2012-04-20 2012-09-19 宁波中一石化科技有限公司 Oxidation regeneration device and method for caustic sludge containing NaSR

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5114320A (en) * 1989-12-27 1992-05-19 Leybold Ag Blower or pump with capillary filter for replenishment of oil separated by vacuum pump
EP0589362A1 (en) * 1992-09-21 1994-03-30 Hitachi, Ltd. Vacuum pump apparatus
CN102671912A (en) * 2012-04-20 2012-09-19 宁波中一石化科技有限公司 Oxidation regeneration device and method for caustic sludge containing NaSR

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