JPS6427099A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS6427099A
JPS6427099A JP62183159A JP18315987A JPS6427099A JP S6427099 A JPS6427099 A JP S6427099A JP 62183159 A JP62183159 A JP 62183159A JP 18315987 A JP18315987 A JP 18315987A JP S6427099 A JPS6427099 A JP S6427099A
Authority
JP
Japan
Prior art keywords
dbi
lines
data
input output
unit cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62183159A
Other languages
Japanese (ja)
Inventor
Akio Hosono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
I O DATA KIKI KK
Original Assignee
I O DATA KIKI KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by I O DATA KIKI KK filed Critical I O DATA KIKI KK
Priority to JP62183159A priority Critical patent/JPS6427099A/en
Publication of JPS6427099A publication Critical patent/JPS6427099A/en
Pending legal-status Critical Current

Links

Landscapes

  • Techniques For Improving Reliability Of Storages (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)

Abstract

PURPOSE:To practically improve the yield of the titled device by selectively connecting a unit cell array consisting of sound cells only to the data line of a data bus. CONSTITUTION:By operating and setting change-over switches 21..., a change- over switch 20 selectively connects three data lines DBi-DBi+2 to one input output data line out of the four lines IO1-IO4. Presently, only the sound cell out of unit cell arrays MC1-MC4 of a memory matrix 11 are connected through an input output terminal IO to the data lines DB1-DB3. The same is operated for the other switching circuits 20,....
JP62183159A 1987-07-22 1987-07-22 Semiconductor memory device Pending JPS6427099A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62183159A JPS6427099A (en) 1987-07-22 1987-07-22 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62183159A JPS6427099A (en) 1987-07-22 1987-07-22 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS6427099A true JPS6427099A (en) 1989-01-30

Family

ID=16130830

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62183159A Pending JPS6427099A (en) 1987-07-22 1987-07-22 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS6427099A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06150687A (en) * 1990-10-30 1994-05-31 Sun Microsyst Inc Method of bypassing flaw and its circuit
JPH07153296A (en) * 1993-11-26 1995-06-16 Nec Corp Semiconductor memory
US5574729A (en) * 1990-09-29 1996-11-12 Mitsubishi Denki Kabushiki Kaisha Redundancy circuit for repairing defective bits in semiconductor memory device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56111194A (en) * 1980-01-18 1981-09-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor memory
JPS59168993A (en) * 1983-03-16 1984-09-22 Hitachi Ltd Semiconductor memory
JPS6161300A (en) * 1984-09-03 1986-03-29 Hitachi Ltd Defect relief circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56111194A (en) * 1980-01-18 1981-09-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor memory
JPS59168993A (en) * 1983-03-16 1984-09-22 Hitachi Ltd Semiconductor memory
JPS6161300A (en) * 1984-09-03 1986-03-29 Hitachi Ltd Defect relief circuit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5574729A (en) * 1990-09-29 1996-11-12 Mitsubishi Denki Kabushiki Kaisha Redundancy circuit for repairing defective bits in semiconductor memory device
JPH06150687A (en) * 1990-10-30 1994-05-31 Sun Microsyst Inc Method of bypassing flaw and its circuit
JPH09578U (en) * 1990-10-30 1997-12-22 サン・マイクロシステムズ・インコーポレーテッド Circuit that bypasses defects
JPH07153296A (en) * 1993-11-26 1995-06-16 Nec Corp Semiconductor memory

Similar Documents

Publication Publication Date Title
EP0323578A3 (en) Crosspoint switching array
EP0165612A3 (en) Memory circuit having a plurality of cell arrays
KR900005563B1 (en) Semiconductor memory device having nibble mode function
EP0257926A3 (en) Electronic arrays having thin film line drivers
TW332927B (en) Sense amplifier
AU4439785A (en) An improved programmable logic array device using eprom technology
MY120457A (en) Semiconductor integrated circuit device
JPS6425398A (en) Semiconductor memory
KR890004334A (en) Semiconductor memory
JPS5771574A (en) Siemconductor memory circuit
EP0369716A3 (en) Amplifying circuit
KR920008773A (en) Semiconductor memory
JPS6419584A (en) Semiconductor memory device
ATE47928T1 (en) SEMICONDUCTOR MEMORY.
JPS56111194A (en) Semiconductor memory
JPS6427099A (en) Semiconductor memory device
EP1288967A3 (en) Semiconductor memory
EP0338757A3 (en) A cell stack for variable digit width serial architecture
KR890007287A (en) Semiconductor memory
US4395704A (en) Input device for electronic apparatus
WO1997025779A3 (en) Multiplexer circuit
US5189320A (en) Programmable logic device with multiple shared logic arrays
DE19749600A1 (en) Clock driver circuitry e.g. for gate array circuit
KR910017423A (en) Semiconductor memory device
AU6530096A (en) A phase control device