NL7309453A - Geheugenmatrix. - Google Patents
Geheugenmatrix.Info
- Publication number
- NL7309453A NL7309453A NL7309453A NL7309453A NL7309453A NL 7309453 A NL7309453 A NL 7309453A NL 7309453 A NL7309453 A NL 7309453A NL 7309453 A NL7309453 A NL 7309453A NL 7309453 A NL7309453 A NL 7309453A
- Authority
- NL
- Netherlands
- Prior art keywords
- memory matrix
- matrix
- memory
- Prior art date
Links
- 239000011159 matrix material Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
- H03K19/091—Integrated injection logic or merged transistor logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
- H01L27/1022—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including bipolar transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/012—Modifications of generator to improve response time or to decrease power consumption
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
- H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
- H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
- H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
- H03K3/289—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable of the master-slave type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/10—SRAM devices comprising bipolar components
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7309453A NL7309453A (nl) | 1973-07-06 | 1973-07-06 | Geheugenmatrix. |
NL7408502A NL7408502A (nl) | 1973-07-06 | 1974-06-25 | Geheugenmatrix. |
IT69116/74A IT1014450B (it) | 1973-07-06 | 1974-07-03 | Matrice di memoria |
GB29480/74A GB1480138A (en) | 1973-07-06 | 1974-07-03 | Transistor memory array |
CH911974A CH585948A5 (nl) | 1973-07-06 | 1974-07-03 | |
SE7408741A SE399605B (sv) | 1973-07-06 | 1974-07-03 | Minnesanordning |
CA203,957A CA1041664A (en) | 1973-07-06 | 1974-07-03 | Memory array |
DE2432099A DE2432099B2 (de) | 1973-07-06 | 1974-07-04 | Speichermatrix |
JP7723474A JPS5516354B2 (nl) | 1973-07-06 | 1974-07-05 | |
AT558374A AT344424B (de) | 1973-07-06 | 1974-07-05 | Speichermatrix |
FR7423639A FR2236248B1 (nl) | 1973-07-06 | 1974-07-08 | |
US05/776,252 US4122542A (en) | 1973-07-06 | 1977-03-10 | Memory array |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7309453A NL7309453A (nl) | 1973-07-06 | 1973-07-06 | Geheugenmatrix. |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7309453A true NL7309453A (nl) | 1975-01-08 |
Family
ID=19819218
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7309453A NL7309453A (nl) | 1973-07-06 | 1973-07-06 | Geheugenmatrix. |
Country Status (3)
Country | Link |
---|---|
US (1) | US4122542A (nl) |
CA (1) | CA1041664A (nl) |
NL (1) | NL7309453A (nl) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5562586A (en) * | 1978-10-30 | 1980-05-12 | Fujitsu Ltd | Semiconductor memory device |
DE2855866C3 (de) * | 1978-12-22 | 1981-10-29 | Ibm Deutschland Gmbh, 7000 Stuttgart | Verfahren und Schaltungsanordnung zum Betreiben eines integrierten Halbleiterspeichers |
DE3070152D1 (en) * | 1979-07-26 | 1985-03-28 | Fujitsu Ltd | Semiconductor memory device including integrated injection logic memory cells |
US4387445A (en) * | 1981-02-24 | 1983-06-07 | International Business Machines Corporation | Random access memory cell |
US4961102A (en) * | 1982-01-04 | 1990-10-02 | Shideler Jay A | Junction programmable vertical transistor with high performance transistor |
CA1188418A (en) * | 1982-01-04 | 1985-06-04 | Jay A. Shideler | Oxide isolation process for standard ram/prom and lateral pnp cell ram |
US4624046A (en) * | 1982-01-04 | 1986-11-25 | Fairchild Camera & Instrument Corp. | Oxide isolation process for standard RAM/PROM and lateral PNP cell RAM |
EP0166043B1 (en) * | 1984-06-25 | 1990-09-19 | International Business Machines Corporation | Mtl storage cell with inherent output multiplex capability |
US5276638A (en) * | 1991-07-31 | 1994-01-04 | International Business Machines Corporation | Bipolar memory cell with isolated PNP load |
US8635426B2 (en) * | 2009-11-04 | 2014-01-21 | Daniel Robert Shepard | Diagonally accessed memory array circuit |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2129166B2 (de) * | 1970-06-12 | 1974-03-28 | Hitachi Ltd., Tokio | Halbleiterspeicher |
US3655999A (en) * | 1971-04-05 | 1972-04-11 | Ibm | Shift register |
DE2165729C3 (de) * | 1971-12-30 | 1975-02-13 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithische, als Lese/Schreiboder als Festwertspeicher betreibbare Speicheranordnung |
-
1973
- 1973-07-06 NL NL7309453A patent/NL7309453A/nl unknown
-
1974
- 1974-07-03 CA CA203,957A patent/CA1041664A/en not_active Expired
-
1977
- 1977-03-10 US US05/776,252 patent/US4122542A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US4122542A (en) | 1978-10-24 |
CA1041664A (en) | 1978-10-31 |
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