NL7415761A - Komplementair geheugenelement. - Google Patents

Komplementair geheugenelement.

Info

Publication number
NL7415761A
NL7415761A NL7415761A NL7415761A NL7415761A NL 7415761 A NL7415761 A NL 7415761A NL 7415761 A NL7415761 A NL 7415761A NL 7415761 A NL7415761 A NL 7415761A NL 7415761 A NL7415761 A NL 7415761A
Authority
NL
Netherlands
Prior art keywords
memory element
complementary memory
complementary
memory
Prior art date
Application number
NL7415761A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of NL7415761A publication Critical patent/NL7415761A/nl

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • H03K3/3565Bistables with hysteresis, e.g. Schmitt trigger

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
NL7415761A 1973-12-06 1974-12-03 Komplementair geheugenelement. NL7415761A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2360887A DE2360887C3 (de) 1973-12-06 1973-12-06 Komplementär-Speicherelement und Verfahren zum Betrieb desselben

Publications (1)

Publication Number Publication Date
NL7415761A true NL7415761A (nl) 1975-06-10

Family

ID=5900109

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7415761A NL7415761A (nl) 1973-12-06 1974-12-03 Komplementair geheugenelement.

Country Status (12)

Country Link
US (1) US3968479A (nl)
JP (1) JPS5749999B2 (nl)
AT (1) AT348279B (nl)
BE (1) BE823054A (nl)
CA (1) CA1047646A (nl)
CH (1) CH583450A5 (nl)
DE (1) DE2360887C3 (nl)
FR (1) FR2254088B1 (nl)
GB (1) GB1490724A (nl)
IT (1) IT1026733B (nl)
NL (1) NL7415761A (nl)
SE (1) SE404099B (nl)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5312239A (en) * 1976-07-20 1978-02-03 Matsushita Electric Ind Co Ltd Driving system for memory unit
JPS52153630A (en) * 1976-06-16 1977-12-20 Matsushita Electric Ind Co Ltd Semiconductor memory device
JPS586234B2 (ja) * 1977-11-17 1983-02-03 富士通株式会社 半導体記憶装置
US4142251A (en) * 1977-11-21 1979-02-27 Hewlett-Packard Company Field programmable read-only-memory
US4384300A (en) * 1978-06-21 1983-05-17 Tokyo Shibaura Denki Kabushiki Kaisha Negative resistance device
US4567577A (en) * 1982-11-04 1986-01-28 Texas Instruments Incorporated Impedance modulated CMOS RAM cell
JPH06103781A (ja) * 1992-09-21 1994-04-15 Sharp Corp メモリセル回路

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL298671A (nl) * 1963-10-01
US3644907A (en) * 1969-12-31 1972-02-22 Westinghouse Electric Corp Complementary mosfet memory cell
US3757313A (en) * 1972-06-29 1973-09-04 Ibm Data storage with predetermined settable configuration

Also Published As

Publication number Publication date
FR2254088A1 (nl) 1975-07-04
BE823054A (fr) 1975-04-01
IT1026733B (it) 1978-10-20
CA1047646A (en) 1979-01-30
ATA913074A (de) 1978-06-15
GB1490724A (en) 1977-11-02
DE2360887C3 (de) 1978-07-27
AT348279B (de) 1979-02-12
FR2254088B1 (nl) 1981-12-11
JPS5749999B2 (nl) 1982-10-25
JPS5090261A (nl) 1975-07-19
US3968479A (en) 1976-07-06
CH583450A5 (nl) 1976-12-31
SE404099B (sv) 1978-09-18
DE2360887B2 (de) 1977-12-01
SE7414935L (nl) 1975-06-09
DE2360887A1 (de) 1975-06-12

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Legal Events

Date Code Title Description
BV The patent application has lapsed