IT1014450B - Matrice di memoria - Google Patents
Matrice di memoriaInfo
- Publication number
- IT1014450B IT1014450B IT69116/74A IT6911674A IT1014450B IT 1014450 B IT1014450 B IT 1014450B IT 69116/74 A IT69116/74 A IT 69116/74A IT 6911674 A IT6911674 A IT 6911674A IT 1014450 B IT1014450 B IT 1014450B
- Authority
- IT
- Italy
- Prior art keywords
- memory matrix
- matrix
- memory
- Prior art date
Links
- 239000011159 matrix material Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
- H03K19/091—Integrated injection logic or merged transistor logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/012—Modifications of generator to improve response time or to decrease power consumption
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
- H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
- H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
- H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
- H03K3/289—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable of the master-slave type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/10—SRAM devices comprising bipolar components
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7309453A NL7309453A (nl) | 1973-07-06 | 1973-07-06 | Geheugenmatrix. |
NL7408502A NL7408502A (nl) | 1973-07-06 | 1974-06-25 | Geheugenmatrix. |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1014450B true IT1014450B (it) | 1977-04-20 |
Family
ID=26644895
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT69116/74A IT1014450B (it) | 1973-07-06 | 1974-07-03 | Matrice di memoria |
Country Status (9)
Country | Link |
---|---|
JP (1) | JPS5516354B2 (it) |
AT (1) | AT344424B (it) |
CH (1) | CH585948A5 (it) |
DE (1) | DE2432099B2 (it) |
FR (1) | FR2236248B1 (it) |
GB (1) | GB1480138A (it) |
IT (1) | IT1014450B (it) |
NL (1) | NL7408502A (it) |
SE (1) | SE399605B (it) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4112511A (en) * | 1977-09-13 | 1978-09-05 | Signetics Corporation | Four transistor static bipolar memory cell using merged transistors |
DE2967103D1 (en) * | 1978-10-03 | 1984-08-16 | Tokyo Shibaura Electric Co | Semiconductor memory device |
DE3174546D1 (en) * | 1981-05-30 | 1986-06-12 | Ibm Deutschland | High-speed large-scale integrated memory with bipolar transistors |
DE3483265D1 (de) * | 1984-06-25 | 1990-10-25 | Ibm | Mtl-speicherzelle mit inhaerenter mehrfachfaehigkeit. |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3643235A (en) * | 1968-12-30 | 1972-02-15 | Ibm | Monolithic semiconductor memory |
-
1974
- 1974-06-25 NL NL7408502A patent/NL7408502A/xx unknown
- 1974-07-03 SE SE7408741A patent/SE399605B/xx not_active Application Discontinuation
- 1974-07-03 CH CH911974A patent/CH585948A5/xx not_active IP Right Cessation
- 1974-07-03 GB GB29480/74A patent/GB1480138A/en not_active Expired
- 1974-07-03 IT IT69116/74A patent/IT1014450B/it active
- 1974-07-04 DE DE2432099A patent/DE2432099B2/de active Granted
- 1974-07-05 AT AT558374A patent/AT344424B/de not_active IP Right Cessation
- 1974-07-05 JP JP7723474A patent/JPS5516354B2/ja not_active Expired
- 1974-07-08 FR FR7423639A patent/FR2236248B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB1480138A (en) | 1977-07-20 |
DE2432099B2 (de) | 1978-05-24 |
SE399605B (sv) | 1978-02-20 |
CH585948A5 (it) | 1977-03-15 |
DE2432099A1 (de) | 1975-02-20 |
JPS5516354B2 (it) | 1980-05-01 |
AT344424B (de) | 1978-07-25 |
FR2236248A1 (it) | 1975-01-31 |
DE2432099C3 (it) | 1979-02-08 |
ATA558374A (de) | 1977-11-15 |
JPS5050832A (it) | 1975-05-07 |
SE7408741L (it) | 1975-01-07 |
FR2236248B1 (it) | 1977-10-07 |
NL7408502A (nl) | 1975-12-30 |
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