IT1202313B - Dispositivo di potenza a semiconduttore,normaolmente interdetto pe alte tensioni e con ron modulata - Google Patents

Dispositivo di potenza a semiconduttore,normaolmente interdetto pe alte tensioni e con ron modulata

Info

Publication number
IT1202313B
IT1202313B IT06614/85A IT661485A IT1202313B IT 1202313 B IT1202313 B IT 1202313B IT 06614/85 A IT06614/85 A IT 06614/85A IT 661485 A IT661485 A IT 661485A IT 1202313 B IT1202313 B IT 1202313B
Authority
IT
Italy
Prior art keywords
interdicted
ron
modulated
normally
power device
Prior art date
Application number
IT06614/85A
Other languages
English (en)
Other versions
IT8506614A0 (it
Inventor
Antonio Caruso
Salvatore Musumeci
Paolo Spirito
Gian Franco Vitale
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Priority to IT06614/85A priority Critical patent/IT1202313B/it
Publication of IT8506614A0 publication Critical patent/IT8506614A0/it
Priority to GB08619843A priority patent/GB2181890B/en
Priority to FR868613117A priority patent/FR2587842B1/fr
Priority to DE3632642A priority patent/DE3632642C2/de
Application granted granted Critical
Publication of IT1202313B publication Critical patent/IT1202313B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
IT06614/85A 1985-09-26 1985-09-26 Dispositivo di potenza a semiconduttore,normaolmente interdetto pe alte tensioni e con ron modulata IT1202313B (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT06614/85A IT1202313B (it) 1985-09-26 1985-09-26 Dispositivo di potenza a semiconduttore,normaolmente interdetto pe alte tensioni e con ron modulata
GB08619843A GB2181890B (en) 1985-09-26 1986-08-14 Semiconductor power device
FR868613117A FR2587842B1 (fr) 1985-09-26 1986-09-19 Dispositif de puissance a semi-conducteur, normalement bloque, pour hautes tensions et a resistance en conduction modulee
DE3632642A DE3632642C2 (de) 1985-09-26 1986-09-25 Halbleiter-Leistungs-Bauelement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT06614/85A IT1202313B (it) 1985-09-26 1985-09-26 Dispositivo di potenza a semiconduttore,normaolmente interdetto pe alte tensioni e con ron modulata

Publications (2)

Publication Number Publication Date
IT8506614A0 IT8506614A0 (it) 1985-09-26
IT1202313B true IT1202313B (it) 1989-02-02

Family

ID=11121438

Family Applications (1)

Application Number Title Priority Date Filing Date
IT06614/85A IT1202313B (it) 1985-09-26 1985-09-26 Dispositivo di potenza a semiconduttore,normaolmente interdetto pe alte tensioni e con ron modulata

Country Status (4)

Country Link
DE (1) DE3632642C2 (it)
FR (1) FR2587842B1 (it)
GB (1) GB2181890B (it)
IT (1) IT1202313B (it)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2230136B (en) * 1989-03-28 1993-02-10 Matsushita Electric Works Ltd Method for manufacturing static induction type semiconductor device and semiconductor devices manufactured thereby
US5010025A (en) * 1989-04-03 1991-04-23 Grumman Aerospace Corporation Method of making trench JFET integrated circuit elements
DE19648041B4 (de) * 1996-11-20 2010-07-15 Robert Bosch Gmbh Integriertes vertikales Halbleiterbauelement
GB2622086A (en) * 2022-09-02 2024-03-06 Search For The Next Ltd A novel transistor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5598871A (en) * 1979-01-22 1980-07-28 Semiconductor Res Found Static induction transistor
JPS5598872A (en) * 1979-01-22 1980-07-28 Semiconductor Res Found Semiconductor device

Also Published As

Publication number Publication date
DE3632642C2 (de) 1998-08-13
FR2587842B1 (fr) 1992-02-21
IT8506614A0 (it) 1985-09-26
GB2181890A (en) 1987-04-29
GB8619843D0 (en) 1986-09-24
GB2181890B (en) 1989-02-08
FR2587842A1 (fr) 1987-03-27
DE3632642A1 (de) 1987-03-26

Similar Documents

Publication Publication Date Title
DE3174427D1 (en) Planar type semiconductor device with a high breakdown voltage
DE3674695D1 (de) Spannungsschaltvorrichtung.
IT8125123A0 (it) Dispositivo semiconduttore astruttura planare per alte tensioni.
KR870004526A (ko) 실리콘 온 인슐레이터 구조를 갖는 반도체 장치
DE3685361D1 (de) Halbleiterspeichervorrichtung.
DE3687329D1 (de) Halbleiterlaser-vorrichtung.
DE3574777D1 (de) Hochspannungsgeraet.
NL189326C (nl) Halfgeleiderinrichting.
DE3685466D1 (de) Halbleiterlaser-vorrichtung.
FR2586862B1 (fr) Dispositif a semiconducteur en particulier du type mosfet.
KR860007755A (ko) 반도체 장치
IT8506628A0 (it) Dispositivo a semiconduttore con una giunzione piana a terminazione auto passivante
IT8519191A0 (it) Dispositivo di montaggio e di connessione per semi-conduttori di potenza.
DE3686987D1 (de) Geraet fuer molekularstrahlepitaxie.
KR860012475U (ko) 반도체 레이저장치
DE3650379D1 (de) Halbleiterlaservorrichtung.
DE3688017D1 (de) Halbleiterlaser-vorrichtung.
DE3688951D1 (de) Halbleiterlaservorrichtung.
IT1202313B (it) Dispositivo di potenza a semiconduttore,normaolmente interdetto pe alte tensioni e con ron modulata
DE3687480D1 (de) Halbleiterlaservorrichtung.
KR870006688A (ko) 반도체 레이저장치
GB8619313D0 (en) Semiconductor laser array device
DE3681645D1 (de) Halbleiterlaser-vorrichtung.
DE3688596D1 (de) Hochspannungsanschlussvorrichtung, insbesondere fuer hochspannungstransformator.
GB2178233B (en) Semiconductor laser array device

Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970929