GB2181890B - Semiconductor power device - Google Patents

Semiconductor power device

Info

Publication number
GB2181890B
GB2181890B GB08619843A GB8619843A GB2181890B GB 2181890 B GB2181890 B GB 2181890B GB 08619843 A GB08619843 A GB 08619843A GB 8619843 A GB8619843 A GB 8619843A GB 2181890 B GB2181890 B GB 2181890B
Authority
GB
United Kingdom
Prior art keywords
power device
semiconductor power
semiconductor
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08619843A
Other languages
English (en)
Other versions
GB2181890A (en
GB8619843D0 (en
Inventor
Antonio Caruso
Salvatore Musumeci
Paolo Spirito
Gian Franco Vitale
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
SGS Microelettronica SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Microelettronica SpA filed Critical SGS Microelettronica SpA
Publication of GB8619843D0 publication Critical patent/GB8619843D0/en
Publication of GB2181890A publication Critical patent/GB2181890A/en
Application granted granted Critical
Publication of GB2181890B publication Critical patent/GB2181890B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
GB08619843A 1985-09-26 1986-08-14 Semiconductor power device Expired GB2181890B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT06614/85A IT1202313B (it) 1985-09-26 1985-09-26 Dispositivo di potenza a semiconduttore,normaolmente interdetto pe alte tensioni e con ron modulata

Publications (3)

Publication Number Publication Date
GB8619843D0 GB8619843D0 (en) 1986-09-24
GB2181890A GB2181890A (en) 1987-04-29
GB2181890B true GB2181890B (en) 1989-02-08

Family

ID=11121438

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08619843A Expired GB2181890B (en) 1985-09-26 1986-08-14 Semiconductor power device

Country Status (4)

Country Link
DE (1) DE3632642C2 (it)
FR (1) FR2587842B1 (it)
GB (1) GB2181890B (it)
IT (1) IT1202313B (it)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2230136B (en) * 1989-03-28 1993-02-10 Matsushita Electric Works Ltd Method for manufacturing static induction type semiconductor device and semiconductor devices manufactured thereby
US5010025A (en) * 1989-04-03 1991-04-23 Grumman Aerospace Corporation Method of making trench JFET integrated circuit elements
DE19648041B4 (de) * 1996-11-20 2010-07-15 Robert Bosch Gmbh Integriertes vertikales Halbleiterbauelement
GB2622086A (en) * 2022-09-02 2024-03-06 Search For The Next Ltd A novel transistor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5598872A (en) * 1979-01-22 1980-07-28 Semiconductor Res Found Semiconductor device
JPS5598871A (en) * 1979-01-22 1980-07-28 Semiconductor Res Found Static induction transistor

Also Published As

Publication number Publication date
DE3632642C2 (de) 1998-08-13
GB2181890A (en) 1987-04-29
DE3632642A1 (de) 1987-03-26
FR2587842A1 (fr) 1987-03-27
FR2587842B1 (fr) 1992-02-21
IT8506614A0 (it) 1985-09-26
GB8619843D0 (en) 1986-09-24
IT1202313B (it) 1989-02-02

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20010814