IT8506614A0 - Dispositivo di potenza a semiconduttore, normalmente interdetto per al te tensioni e con ron modulata - Google Patents
Dispositivo di potenza a semiconduttore, normalmente interdetto per al te tensioni e con ron modulataInfo
- Publication number
- IT8506614A0 IT8506614A0 IT8506614A IT661485A IT8506614A0 IT 8506614 A0 IT8506614 A0 IT 8506614A0 IT 8506614 A IT8506614 A IT 8506614A IT 661485 A IT661485 A IT 661485A IT 8506614 A0 IT8506614 A0 IT 8506614A0
- Authority
- IT
- Italy
- Prior art keywords
- ron
- modulated
- power device
- high voltages
- semiconductor power
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT06614/85A IT1202313B (it) | 1985-09-26 | 1985-09-26 | Dispositivo di potenza a semiconduttore,normaolmente interdetto pe alte tensioni e con ron modulata |
GB08619843A GB2181890B (en) | 1985-09-26 | 1986-08-14 | Semiconductor power device |
FR868613117A FR2587842B1 (fr) | 1985-09-26 | 1986-09-19 | Dispositif de puissance a semi-conducteur, normalement bloque, pour hautes tensions et a resistance en conduction modulee |
DE3632642A DE3632642C2 (de) | 1985-09-26 | 1986-09-25 | Halbleiter-Leistungs-Bauelement |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT06614/85A IT1202313B (it) | 1985-09-26 | 1985-09-26 | Dispositivo di potenza a semiconduttore,normaolmente interdetto pe alte tensioni e con ron modulata |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8506614A0 true IT8506614A0 (it) | 1985-09-26 |
IT1202313B IT1202313B (it) | 1989-02-02 |
Family
ID=11121438
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT06614/85A IT1202313B (it) | 1985-09-26 | 1985-09-26 | Dispositivo di potenza a semiconduttore,normaolmente interdetto pe alte tensioni e con ron modulata |
Country Status (4)
Country | Link |
---|---|
DE (1) | DE3632642C2 (it) |
FR (1) | FR2587842B1 (it) |
GB (1) | GB2181890B (it) |
IT (1) | IT1202313B (it) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2230136B (en) * | 1989-03-28 | 1993-02-10 | Matsushita Electric Works Ltd | Method for manufacturing static induction type semiconductor device and semiconductor devices manufactured thereby |
US5010025A (en) * | 1989-04-03 | 1991-04-23 | Grumman Aerospace Corporation | Method of making trench JFET integrated circuit elements |
DE19648041B4 (de) * | 1996-11-20 | 2010-07-15 | Robert Bosch Gmbh | Integriertes vertikales Halbleiterbauelement |
GB2622086A (en) * | 2022-09-02 | 2024-03-06 | Search For The Next Ltd | A novel transistor device |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5598872A (en) * | 1979-01-22 | 1980-07-28 | Semiconductor Res Found | Semiconductor device |
JPS5598871A (en) * | 1979-01-22 | 1980-07-28 | Semiconductor Res Found | Static induction transistor |
-
1985
- 1985-09-26 IT IT06614/85A patent/IT1202313B/it active
-
1986
- 1986-08-14 GB GB08619843A patent/GB2181890B/en not_active Expired
- 1986-09-19 FR FR868613117A patent/FR2587842B1/fr not_active Expired - Lifetime
- 1986-09-25 DE DE3632642A patent/DE3632642C2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE3632642C2 (de) | 1998-08-13 |
GB2181890A (en) | 1987-04-29 |
DE3632642A1 (de) | 1987-03-26 |
FR2587842A1 (fr) | 1987-03-27 |
FR2587842B1 (fr) | 1992-02-21 |
GB8619843D0 (en) | 1986-09-24 |
GB2181890B (en) | 1989-02-08 |
IT1202313B (it) | 1989-02-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR870004526A (ko) | 실리콘 온 인슐레이터 구조를 갖는 반도체 장치 | |
DE3674695D1 (de) | Spannungsschaltvorrichtung. | |
DE3574777D1 (de) | Hochspannungsgeraet. | |
IT8521087A0 (it) | Dispositivo elettrico di potenza intelligente a circuito integrato monolitico. | |
DE3677444D1 (de) | Spannungspegelumsetzungsschaltung. | |
DK163962C (da) | Injektionsindretning | |
DE3672044D1 (de) | Spannungsstromumsetzer. | |
IT8519191A0 (it) | Dispositivo di montaggio e di connessione per semi-conduttori di potenza. | |
EP0217326A3 (en) | Semiconductor device with a high breakdown voltage | |
KR860012475U (ko) | 반도체 레이저장치 | |
DE3585229D1 (de) | Videokonvertiergeraet. | |
ATE85725T1 (de) | Hochspannungsspannungswandler. | |
FR2592241B1 (fr) | Circuit limiteur de tension. | |
IT8506614A0 (it) | Dispositivo di potenza a semiconduttore, normalmente interdetto per al te tensioni e con ron modulata | |
DE3576252D1 (de) | Gasisoliertes elektrisches geraet. | |
KR870006688A (ko) | 반도체 레이저장치 | |
DE3688596D1 (de) | Hochspannungsanschlussvorrichtung, insbesondere fuer hochspannungstransformator. | |
GB8619313D0 (en) | Semiconductor laser array device | |
GB2178233B (en) | Semiconductor laser array device | |
DE3684572D1 (de) | Blitzschutzgeraet fuer eine aeussere oberflaeche. | |
GB8614932D0 (en) | Semiconductor laser array device | |
ES551734A0 (es) | Un dispositivo fotovoltaico mejorado | |
GB8600594D0 (en) | Semiconductor laser array device | |
AT385612B (de) | Spannungswandleranordnung mit trennkontakten | |
KR880700983A (ko) | 라스터 주사장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19970929 |