DE3686987D1 - Geraet fuer molekularstrahlepitaxie. - Google Patents

Geraet fuer molekularstrahlepitaxie.

Info

Publication number
DE3686987D1
DE3686987D1 DE8686109793T DE3686987T DE3686987D1 DE 3686987 D1 DE3686987 D1 DE 3686987D1 DE 8686109793 T DE8686109793 T DE 8686109793T DE 3686987 T DE3686987 T DE 3686987T DE 3686987 D1 DE3686987 D1 DE 3686987D1
Authority
DE
Germany
Prior art keywords
molecular radiation
epitaxy
radiation epitaxy
molecular
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686109793T
Other languages
English (en)
Inventor
Naoyuki Tamura
Hideaki Kamohara
Norio Kanai
Kazuaki Ichihashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3686987D1 publication Critical patent/DE3686987D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67766—Mechanical parts of transfer devices
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/005—Transport systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
DE8686109793T 1985-08-09 1986-07-16 Geraet fuer molekularstrahlepitaxie. Expired - Lifetime DE3686987D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60174103A JPS6235513A (ja) 1985-08-09 1985-08-09 分子線エピタキシ装置

Publications (1)

Publication Number Publication Date
DE3686987D1 true DE3686987D1 (de) 1992-11-26

Family

ID=15972696

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686109793T Expired - Lifetime DE3686987D1 (de) 1985-08-09 1986-07-16 Geraet fuer molekularstrahlepitaxie.

Country Status (4)

Country Link
US (1) US4810473A (de)
EP (1) EP0211292B1 (de)
JP (1) JPS6235513A (de)
DE (1) DE3686987D1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0691952B2 (ja) * 1987-04-17 1994-11-16 株式会社日立製作所 真空装置
DE3827343A1 (de) * 1988-08-12 1990-02-15 Leybold Ag Vorrichtung nach dem karussel-prinzip zum beschichten von substraten
DE3885243T2 (de) * 1987-11-30 1994-05-11 Daido Oxygen Vorrichtung und ihre Verwendung zur Herstellung von Halbleitern.
JP2631485B2 (ja) * 1988-01-28 1997-07-16 キヤノン株式会社 位置決め装置
EP0339132A3 (de) * 1988-02-24 1990-07-04 Balzers Aktiengesellschaft Vorrichtung zum Speichern von Objekten unter Vakuum
DE68926577T2 (de) * 1988-03-30 1996-10-02 Rohm Co Ltd Einrichtung zur Molekularstrahlepitaxie
US4984954A (en) * 1988-04-25 1991-01-15 Warenback Douglas H Spatula for wafer transport
US4951603A (en) * 1988-09-12 1990-08-28 Daidousanso Co., Ltd. Apparatus for producing semiconductors
US4952299A (en) * 1988-10-31 1990-08-28 Eaton Corporation Wafer handling apparatus
JPH02296842A (ja) * 1989-05-10 1990-12-07 Toppan Printing Co Ltd 発泡性樹脂組成物及び化粧材料
DE3927726A1 (de) * 1989-08-23 1991-02-28 Standard Elektrik Lorenz Ag Anlage fuer epitaktische beschichtung von halbleiterwafern
GB9006471D0 (en) * 1990-03-22 1990-05-23 Surface Tech Sys Ltd Loading mechanisms
US5286296A (en) * 1991-01-10 1994-02-15 Sony Corporation Multi-chamber wafer process equipment having plural, physically communicating transfer means
WO1992015636A1 (en) * 1991-02-28 1992-09-17 Sekisui Kagaku Kogyo Kabushiki Kaisha Coating sheet and method of making molded product using said sheet
JPH05275511A (ja) * 1991-03-01 1993-10-22 Tokyo Electron Ltd 被処理体の移載システム及び処理装置
JP2912842B2 (ja) * 1995-01-17 1999-06-28 株式会社エイコー・エンジニアリング 薄膜形成装置
KR20060095951A (ko) * 2003-09-25 2006-09-05 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 기판의 제조 방법
US10889895B2 (en) 2014-06-12 2021-01-12 Raytheon Technologies Corporation Deposition apparatus and use methods
US9773889B2 (en) 2014-07-18 2017-09-26 Taiwan Semiconductor Manufacturing Company Limited Method of semiconductor arrangement formation

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3641973A (en) * 1970-11-25 1972-02-15 Air Reduction Vacuum coating apparatus
US3921788A (en) * 1974-05-21 1975-11-25 Macronetics Inc Processing apparatus for thin disc-like workpieces
US4009680A (en) * 1974-09-16 1977-03-01 Fengler Werner H Apparatus for producing high wear-resistant composite seal
US4181544A (en) * 1976-12-30 1980-01-01 Bell Telephone Laboratories, Incorporated Molecular beam method for processing a plurality of substrates
US4308756A (en) * 1979-10-04 1982-01-05 Ultra High Vacuum Instruments Ltd. Vacuum sample introduction unit
FR2498813A1 (fr) * 1981-01-27 1982-07-30 Instruments Sa Installation de traitement de materiaux pour la production de semi-conducteurs
FR2502643B1 (fr) * 1981-03-27 1986-05-02 Western Electric Co Appareil et procede de depot par jet moleculaire sur plusieurs substrats
JPS57206046A (en) * 1981-06-15 1982-12-17 Hitachi Ltd Wafer conveying device
US4412771A (en) * 1981-07-30 1983-11-01 The Perkin-Elmer Corporation Sample transport system
JPS5918195A (ja) * 1982-07-20 1984-01-30 Nippon Telegr & Teleph Corp <Ntt> 超高真空薄膜成長装置
JPS5986143A (ja) * 1982-11-09 1984-05-18 Ulvac Corp ウエハ自動交換装置
JPS605509A (ja) * 1983-06-24 1985-01-12 Hitachi Ltd 分子線エピタキシ装置
US4605469A (en) * 1983-11-10 1986-08-12 Texas Instruments Incorporated MBE system with in-situ mounting
US4553069A (en) * 1984-01-05 1985-11-12 General Ionex Corporation Wafer holding apparatus for ion implantation

Also Published As

Publication number Publication date
JPH0360174B2 (de) 1991-09-12
JPS6235513A (ja) 1987-02-16
EP0211292B1 (de) 1992-10-21
US4810473A (en) 1989-03-07
EP0211292A2 (de) 1987-02-25
EP0211292A3 (en) 1989-05-24

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