DE68926577T2 - Einrichtung zur Molekularstrahlepitaxie - Google Patents

Einrichtung zur Molekularstrahlepitaxie

Info

Publication number
DE68926577T2
DE68926577T2 DE68926577T DE68926577T DE68926577T2 DE 68926577 T2 DE68926577 T2 DE 68926577T2 DE 68926577 T DE68926577 T DE 68926577T DE 68926577 T DE68926577 T DE 68926577T DE 68926577 T2 DE68926577 T2 DE 68926577T2
Authority
DE
Germany
Prior art keywords
molecular beam
beam epitaxy
epitaxy
molecular
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68926577T
Other languages
English (en)
Other versions
DE68926577D1 (de
Inventor
Haruo Tanaka
Masato Mushiage
Yuhji Ishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63077798A external-priority patent/JPH01249692A/ja
Priority claimed from JP1988042830U external-priority patent/JPH0527501Y2/ja
Priority claimed from JP63087918A external-priority patent/JPH01261296A/ja
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of DE68926577D1 publication Critical patent/DE68926577D1/de
Application granted granted Critical
Publication of DE68926577T2 publication Critical patent/DE68926577T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
DE68926577T 1988-03-30 1989-03-23 Einrichtung zur Molekularstrahlepitaxie Expired - Fee Related DE68926577T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP63077798A JPH01249692A (ja) 1988-03-30 1988-03-30 分子線エピタキシー装置
JP1988042830U JPH0527501Y2 (de) 1988-03-30 1988-03-30
JP63087918A JPH01261296A (ja) 1988-04-08 1988-04-08 分子線エピタキシー装置

Publications (2)

Publication Number Publication Date
DE68926577D1 DE68926577D1 (de) 1996-07-04
DE68926577T2 true DE68926577T2 (de) 1996-10-02

Family

ID=27291358

Family Applications (2)

Application Number Title Priority Date Filing Date
DE68916457T Expired - Lifetime DE68916457T2 (de) 1988-03-30 1989-03-23 Einrichtung zur Molekularstrahlepitaxie.
DE68926577T Expired - Fee Related DE68926577T2 (de) 1988-03-30 1989-03-23 Einrichtung zur Molekularstrahlepitaxie

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE68916457T Expired - Lifetime DE68916457T2 (de) 1988-03-30 1989-03-23 Einrichtung zur Molekularstrahlepitaxie.

Country Status (6)

Country Link
US (1) US4944246A (de)
EP (2) EP0335267B1 (de)
KR (2) KR930010750B1 (de)
CA (1) CA1333038C (de)
DE (2) DE68916457T2 (de)
TW (1) TW202485B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010016792A1 (de) * 2010-05-05 2011-11-10 Aixtron Ag Bevorratungsmagazin einer CVD-Anlage

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2678775B1 (fr) * 1991-07-05 1997-02-28 Thomson Csf Procede de realisation d'un dispositif optoelectronique
US5379719A (en) * 1993-07-26 1995-01-10 Sandia National Laboratories Method of deposition by molecular beam epitaxy
GB9405442D0 (en) * 1994-03-19 1994-05-04 Applied Vision Ltd Apparatus for coating substrates
GB0008286D0 (en) * 2000-04-04 2000-05-24 Applied Materials Inc A vaporiser for generating feed gas for an arc chamber
US7622322B2 (en) * 2001-03-23 2009-11-24 Cornell Research Foundation, Inc. Method of forming an AlN coated heterojunction field effect transistor
DE10261362B8 (de) * 2002-12-30 2008-08-28 Osram Opto Semiconductors Gmbh Substrat-Halter
US7767480B1 (en) * 2004-02-26 2010-08-03 Opticomp Corporation Method for semiconductor compositional grading to realize low-resistance, distributed Bragg reflectors
DE212007000078U1 (de) 2006-10-31 2009-06-25 "Nauchnoe I Tekhnologicheskoe Oborudovanie" Limited Züchtungsmanipulator
WO2008054239A1 (fr) * 2006-10-31 2008-05-08 'nauchnoe I Tekhnologicheskoe Oborudovanie' Limited Manipulateur de croissance pour chambre à vide destiné à la croissance d'hétérostructures semi-conductrices
US20100282167A1 (en) * 2008-12-18 2010-11-11 Veeco Instruments Inc. Linear Deposition Source
WO2011065999A1 (en) * 2008-12-18 2011-06-03 Veeco Instruments Inc. Linear deposition source
US20100159132A1 (en) * 2008-12-18 2010-06-24 Veeco Instruments, Inc. Linear Deposition Source
US10026436B2 (en) * 2009-07-01 2018-07-17 Nordson Corporation Apparatus and methods for supporting workpieces during plasma processing
JP5654807B2 (ja) * 2010-09-07 2015-01-14 東京エレクトロン株式会社 基板搬送方法及び記憶媒体
FR3025220B1 (fr) * 2014-09-03 2016-09-09 Riber Dispositif sous vide pour le traitement ou l'analyse d'un echantillon
FR3025219B1 (fr) * 2014-09-03 2016-12-02 Riber Dispositif sous vide pour le traitement ou l'analyse d'un echantillon
CN106637416B (zh) * 2016-12-28 2018-11-20 厦门大学 矢量强磁场下分子束外延及其原位表征装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3839084A (en) * 1972-11-29 1974-10-01 Bell Telephone Labor Inc Molecular beam epitaxy method for fabricating magnesium doped thin films of group iii(a)-v(a) compounds
US4171234A (en) * 1976-07-20 1979-10-16 Matsushita Electric Industrial Co., Ltd. Method of fabricating three-dimensional epitaxial layers utilizing molecular beams of varied angles
GB2010335A (en) * 1977-11-29 1979-06-27 Dobson C Improvements Relating to Vacuum Deposition Chamber
FR2502643B1 (fr) * 1981-03-27 1986-05-02 Western Electric Co Appareil et procede de depot par jet moleculaire sur plusieurs substrats
US4681773A (en) * 1981-03-27 1987-07-21 American Telephone And Telegraph Company At&T Bell Laboratories Apparatus for simultaneous molecular beam deposition on a plurality of substrates
US4592308A (en) * 1983-11-10 1986-06-03 Texas Instruments Incorporated Solderless MBE system
US4569829A (en) * 1983-11-10 1986-02-11 Texas Instruments Incorporated MBE Source bakeout system
US4605469A (en) * 1983-11-10 1986-08-12 Texas Instruments Incorporated MBE system with in-situ mounting
EP0145285B1 (de) * 1983-11-10 1992-05-20 Texas Instruments Incorporated MBE-System ohne Schweissen
JPS60108400A (ja) * 1983-11-15 1985-06-13 Toshiba Corp 分子線結晶成長装置
JPS6132414A (ja) * 1984-07-24 1986-02-15 Mitsubishi Electric Corp 薄膜形成装置
JPS61107720A (ja) * 1984-10-31 1986-05-26 Hitachi Ltd 分子線エピタキシ装置
US4636268A (en) * 1984-11-30 1987-01-13 At&T Bell Laboratories Chemical beam deposition method utilizing alkyl compounds in a carrier gas
JPS61280610A (ja) * 1985-06-06 1986-12-11 Toshiba Corp 分子線エピタキシヤル成長装置
JPS6235513A (ja) * 1985-08-09 1987-02-16 Hitachi Ltd 分子線エピタキシ装置
JPS6261315A (ja) * 1985-09-11 1987-03-18 Sharp Corp 分子線エピタキシ−装置
JPS62145809A (ja) * 1985-12-20 1987-06-29 Seiko Instr & Electronics Ltd 分子線源用シヤツタ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010016792A1 (de) * 2010-05-05 2011-11-10 Aixtron Ag Bevorratungsmagazin einer CVD-Anlage

Also Published As

Publication number Publication date
DE68916457T2 (de) 1995-02-09
KR890016632A (ko) 1989-11-29
DE68926577D1 (de) 1996-07-04
EP0529687A2 (de) 1993-03-03
EP0335267A3 (en) 1990-10-31
CA1333038C (en) 1994-11-15
DE68916457D1 (de) 1994-08-04
EP0529687B1 (de) 1996-05-29
EP0335267A2 (de) 1989-10-04
KR930010750B1 (ko) 1993-11-10
US4944246A (en) 1990-07-31
KR930010751B1 (ko) 1993-11-10
TW202485B (de) 1993-03-21
EP0529687A3 (en) 1993-03-24
EP0335267B1 (de) 1994-06-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee