IT1121920B - Contatti ohmici su semiconduttori di tipo n dei gruppi iii(a)-v(a) - Google Patents

Contatti ohmici su semiconduttori di tipo n dei gruppi iii(a)-v(a)

Info

Publication number
IT1121920B
IT1121920B IT23843/79A IT2384379A IT1121920B IT 1121920 B IT1121920 B IT 1121920B IT 23843/79 A IT23843/79 A IT 23843/79A IT 2384379 A IT2384379 A IT 2384379A IT 1121920 B IT1121920 B IT 1121920B
Authority
IT
Italy
Prior art keywords
metal
layer
ohmic contact
semiconductors
type
Prior art date
Application number
IT23843/79A
Other languages
English (en)
Other versions
IT7923843A0 (it
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of IT7923843A0 publication Critical patent/IT7923843A0/it
Application granted granted Critical
Publication of IT1121920B publication Critical patent/IT1121920B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/018—Compensation doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/02—Contacts, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/088—J-Fet, i.e. junction field effect transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
IT23843/79A 1978-06-27 1979-06-25 Contatti ohmici su semiconduttori di tipo n dei gruppi iii(a)-v(a) IT1121920B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/919,624 US4186410A (en) 1978-06-27 1978-06-27 Nonalloyed ohmic contacts to n-type Group III(a)-V(a) semiconductors

Publications (2)

Publication Number Publication Date
IT7923843A0 IT7923843A0 (it) 1979-06-25
IT1121920B true IT1121920B (it) 1986-04-23

Family

ID=25442374

Family Applications (1)

Application Number Title Priority Date Filing Date
IT23843/79A IT1121920B (it) 1978-06-27 1979-06-25 Contatti ohmici su semiconduttori di tipo n dei gruppi iii(a)-v(a)

Country Status (9)

Country Link
US (1) US4186410A (it)
JP (1) JPS554999A (it)
BE (1) BE877189A (it)
CA (1) CA1125924A (it)
DE (1) DE2925791A1 (it)
FR (1) FR2430090B1 (it)
GB (1) GB2024506B (it)
IT (1) IT1121920B (it)
NL (1) NL7904979A (it)

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US4226649A (en) * 1979-09-11 1980-10-07 The United States Of America As Represented By The Secretary Of The Navy Method for epitaxial growth of GaAs films and devices configuration independent of GaAs substrate utilizing molecular beam epitaxy and substrate removal techniques
US4301188A (en) * 1979-10-01 1981-11-17 Bell Telephone Laboratories, Incorporated Process for producing contact to GaAs active region
JPS5874084A (ja) * 1981-10-29 1983-05-04 Fujitsu Ltd 半導体装置
EP0105324A4 (en) * 1982-04-12 1986-07-24 Motorola Inc OHMIC CONTACT FOR TYPE N. GaAs
US4461071A (en) * 1982-08-23 1984-07-24 Xerox Corporation Photolithographic process for fabricating thin film transistors
JPS5972723A (ja) * 1982-10-19 1984-04-24 Matsushita Electric Ind Co Ltd ３−５族化合物半導体のオ−ミツク電極の形成方法
US4651179A (en) * 1983-01-21 1987-03-17 Rca Corporation Low resistance gallium arsenide field effect transistor
US4545109A (en) * 1983-01-21 1985-10-08 Rca Corporation Method of making a gallium arsenide field effect transistor
US4583110A (en) * 1984-06-14 1986-04-15 International Business Machines Corporation Intermetallic semiconductor ohmic contact
US4816881A (en) * 1985-06-27 1989-03-28 United State Of America As Represented By The Secretary Of The Navy A TiW diffusion barrier for AuZn ohmic contacts to p-type InP
US4652896A (en) * 1985-06-27 1987-03-24 The United States Of America As Represented By The Secretary Of The Air Force Modulation doped GaAs/AlGaAs field effect transistor
US4632713A (en) * 1985-07-31 1986-12-30 Texas Instruments Incorporated Process of making Schottky barrier devices formed by diffusion before contacting
US4738937A (en) * 1985-10-22 1988-04-19 Hughes Aircraft Company Method of making ohmic contact structure
DE3609274A1 (de) * 1986-03-19 1987-09-24 Siemens Ag Verfahren zur herstellung eines selbstjustiert positionierten metallkontaktes
EP0272303A1 (en) * 1986-06-24 1988-06-29 AT&T Corp. Method for fabricating devices in iii-v semiconductor substrates and devices formed thereby
DE3630284A1 (de) * 1986-09-05 1988-03-17 Licentia Gmbh Verfahren zum herstellen eines feldeffekt-transistors
US4853346A (en) * 1987-12-31 1989-08-01 International Business Machines Corporation Ohmic contacts for semiconductor devices and method for forming ohmic contacts
US4952527A (en) * 1988-02-19 1990-08-28 Massachusetts Institute Of Technology Method of making buffer layers for III-V devices using solid phase epitaxy
DE3842863A1 (de) * 1988-12-20 1990-06-21 Fraunhofer Ges Forschung Feldeffekttransistor und verfahren zum herstellen eines feldeffekttransistors
US5393698A (en) * 1989-02-01 1995-02-28 California Institute Of Technology Method for fabricating semiconductor devices
US5036023A (en) * 1989-08-16 1991-07-30 At&T Bell Laboratories Rapid thermal processing method of making a semiconductor device
US5011792A (en) * 1990-02-12 1991-04-30 At&T Bell Laboratories Method of making ohmic resistance WSb, contacts to III-V semiconductor materials
US5100835A (en) * 1991-03-18 1992-03-31 Eastman Kodak Company Shallow ohmic contacts to N-GaAs
US5160793A (en) * 1991-06-07 1992-11-03 Eastman Kodak Company Shallow ohmic contacts to n-Alx Ga1-x As
US5342795A (en) * 1992-04-30 1994-08-30 Texas Instruments Incorporated Method of fabricating power VFET gate-refill
US5468661A (en) * 1993-06-17 1995-11-21 Texas Instruments Incorporated Method of making power VFET device
JP3502651B2 (ja) * 1993-02-08 2004-03-02 トリクイント セミコンダクター テキサス、エルピー 電極形成法
JPH07307306A (ja) * 1994-05-10 1995-11-21 Nissan Motor Co Ltd 半導体装置の製造方法
US5646069A (en) * 1995-06-07 1997-07-08 Hughes Aircraft Company Fabrication process for Alx In1-x As/Gay In1-y As power HFET ohmic contacts
US5811322A (en) * 1996-07-15 1998-09-22 W. L. Gore & Associates, Inc. Method of making a broadband backside illuminated MESFET with collecting microlens
US6633120B2 (en) 1998-11-19 2003-10-14 Unisplay S.A. LED lamps
US8587020B2 (en) 1997-11-19 2013-11-19 Epistar Corporation LED lamps
WO2000049645A1 (fr) * 1999-02-18 2000-08-24 The Furukawa Electric Co., Ltd. Electrode pour dispositif a semi-conducteur et son procede de fabrication
DE60136429D1 (de) * 2000-02-04 2008-12-18 Ommic Verfahren zur herstellung einer halbleiteranordnung mit einem feldeffekt-transistor mit vergrabenem kanal
US8435873B2 (en) 2006-06-08 2013-05-07 Texas Instruments Incorporated Unguarded Schottky barrier diodes with dielectric underetch at silicide interface
JP5313457B2 (ja) * 2007-03-09 2013-10-09 パナソニック株式会社 窒化物半導体装置及びその製造方法
FR2914500B1 (fr) * 2007-03-30 2009-11-20 Picogiga Internat Dispositif electronique a contact ohmique ameliore
US20080258242A1 (en) * 2007-04-19 2008-10-23 Northrop Grumman Space And Mission Systems Corp. Low contact resistance ohmic contact for a high electron mobility transistor and fabrication method thereof
US20080303162A1 (en) * 2007-06-07 2008-12-11 Hidetoshi Ishida Semiconductor device
US11309412B1 (en) * 2017-05-17 2022-04-19 Northrop Grumman Systems Corporation Shifting the pinch-off voltage of an InP high electron mobility transistor with a metal ring
CN115706156A (zh) * 2021-08-10 2023-02-17 华为技术有限公司 一种半导体器件及其制备方法

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GB1027525A (it) * 1962-03-02
FR1522197A (fr) * 1966-06-08 1968-04-19 Western Electric Co Procédé pour former un contact ohmique sur de l'arséniure de gallium du type n
US3490140A (en) * 1967-10-05 1970-01-20 Bell Telephone Labor Inc Methods for making semiconductor devices
US3684930A (en) * 1970-12-28 1972-08-15 Gen Electric Ohmic contact for group iii-v p-types semiconductors
US3711745A (en) * 1971-10-06 1973-01-16 Microwave Ass Inc Low barrier height gallium arsenide microwave schottky diodes using gold-germanium alloy
DD97094A1 (it) * 1972-05-26 1973-04-12
FR2230078B1 (it) * 1973-05-18 1977-07-29 Radiotechnique Compelec
US3855613A (en) * 1973-06-22 1974-12-17 Rca Corp A solid state switch using an improved junction field effect transistor
US3914785A (en) * 1973-12-03 1975-10-21 Bell Telephone Labor Inc Germanium doped GaAs layer as an ohmic contact
US3928092A (en) * 1974-08-28 1975-12-23 Bell Telephone Labor Inc Simultaneous molecular beam deposition of monocrystalline and polycrystalline III(a)-V(a) compounds to produce semiconductor devices
US4011583A (en) * 1974-09-03 1977-03-08 Bell Telephone Laboratories, Incorporated Ohmics contacts of germanium and palladium alloy from group III-V n-type semiconductors
US3898353A (en) * 1974-10-03 1975-08-05 Us Army Self aligned drain and gate field effect transistor
US3987373A (en) * 1975-03-19 1976-10-19 Lexel Corporation Laser having etalon assembly
NL7609676A (nl) * 1975-09-03 1977-03-07 Hitachi Ltd Verbindingsaansluiting voor een halfgeleider- inrichting.

Also Published As

Publication number Publication date
GB2024506A (en) 1980-01-09
DE2925791A1 (de) 1980-01-03
IT7923843A0 (it) 1979-06-25
NL7904979A (nl) 1980-01-02
CA1125924A (en) 1982-06-15
BE877189A (fr) 1979-10-15
US4186410A (en) 1980-01-29
JPS554999A (en) 1980-01-14
GB2024506B (en) 1983-04-27
FR2430090A1 (fr) 1980-01-25
DE2925791C2 (it) 1991-05-29
FR2430090B1 (fr) 1985-06-28

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Legal Events

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19940627