SE7904301L - Ohmsk kontakt med n-halvledare - Google Patents
Ohmsk kontakt med n-halvledareInfo
- Publication number
- SE7904301L SE7904301L SE7904301A SE7904301A SE7904301L SE 7904301 L SE7904301 L SE 7904301L SE 7904301 A SE7904301 A SE 7904301A SE 7904301 A SE7904301 A SE 7904301A SE 7904301 L SE7904301 L SE 7904301L
- Authority
- SE
- Sweden
- Prior art keywords
- semiconductor
- gold
- aluminum
- low resistance
- resistance ohmic
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
- 239000010931 gold Substances 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 230000001464 adherent effect Effects 0.000 abstract 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/02—Contacts, special
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/909,024 US4179534A (en) | 1978-05-24 | 1978-05-24 | Gold-tin-gold ohmic contact to N-type group III-V semiconductors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| SE7904301L true SE7904301L (sv) | 1979-11-25 |
| SE438946B SE438946B (sv) | 1985-05-13 |
Family
ID=25426530
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE7904301A SE438946B (sv) | 1978-05-24 | 1979-05-16 | Forfarande for framstellning av en halvledaranordning |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US4179534A (sv) |
| JP (1) | JPS5932055B2 (sv) |
| BE (1) | BE876480A (sv) |
| CA (1) | CA1124410A (sv) |
| DE (1) | DE2920444C2 (sv) |
| ES (1) | ES480898A1 (sv) |
| FR (1) | FR2426976A1 (sv) |
| GB (1) | GB2021858B (sv) |
| IT (1) | IT1114013B (sv) |
| NL (1) | NL182108C (sv) |
| SE (1) | SE438946B (sv) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4316209A (en) * | 1979-08-31 | 1982-02-16 | International Business Machines Corporation | Metal/silicon contact and methods of fabrication thereof |
| US4301188A (en) * | 1979-10-01 | 1981-11-17 | Bell Telephone Laboratories, Incorporated | Process for producing contact to GaAs active region |
| US4360564A (en) * | 1981-01-29 | 1982-11-23 | General Electric Company | Thin films of low resistance and high coefficients of transmission in the visible spectrum |
| US4484332A (en) * | 1982-06-02 | 1984-11-20 | The United States Of America As Represented By The Secretary Of The Air Force | Multiple double heterojunction buried laser device |
| DE3232837A1 (de) * | 1982-09-03 | 1984-03-08 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen einer 2-ebenen-metallisierung fuer halbleiterbauelemente, insbesondere fuer leistungshalbleiterbauelemente wie thyristoren |
| US4576659A (en) * | 1982-12-02 | 1986-03-18 | International Business Machines Corporation | Process for inhibiting metal migration during heat cycling of multilayer thin metal film structures |
| DE3318683C1 (de) * | 1983-05-21 | 1984-12-13 | Telefunken electronic GmbH, 7100 Heilbronn | Legierter Kontakt für n-leitendes GaAlAs-Halbleitermaterial |
| US4510514A (en) * | 1983-08-08 | 1985-04-09 | At&T Bell Laboratories | Ohmic contacts for semiconductor devices |
| US4623086A (en) * | 1985-03-11 | 1986-11-18 | Mcdonnell Douglas Corporation | Process of monitoring for the reflectivity change in indium phase transition soldering |
| US4866505A (en) * | 1986-03-19 | 1989-09-12 | Analog Devices, Inc. | Aluminum-backed wafer and chip |
| US4853346A (en) * | 1987-12-31 | 1989-08-01 | International Business Machines Corporation | Ohmic contacts for semiconductor devices and method for forming ohmic contacts |
| JP2817217B2 (ja) * | 1989-06-30 | 1998-10-30 | 日本電気株式会社 | 金属・半導体接合を有する半導体装置およびその製造方法 |
| US7368316B2 (en) * | 1999-04-23 | 2008-05-06 | The Furukawa Electric Co., Ltd. | Surface-emission semiconductor laser device |
| JP2000307190A (ja) * | 1999-04-23 | 2000-11-02 | Furukawa Electric Co Ltd:The | 面発光型半導体レーザの作製方法 |
| US7881359B2 (en) * | 1999-04-23 | 2011-02-01 | The Furukawa Electric Co., Ltd | Surface-emission semiconductor laser device |
| JP2004235649A (ja) * | 2003-01-31 | 2004-08-19 | Osram Opto Semiconductors Gmbh | 電気コンタクト領域を備えたモジュールの製造方法および半導体層列および活性ゾーンを有するモジュール |
| DE10308322B4 (de) * | 2003-01-31 | 2014-11-06 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines elektrischen Kontaktbereiches auf einer Halbleiterschicht und Bauelement mit derartigem Kontaktbereich |
| DE102005024830B4 (de) * | 2005-05-27 | 2009-07-02 | Noctron S.A.R.L. | Leuchtdioden-Anordnung |
| WO2019143569A1 (en) * | 2018-01-16 | 2019-07-25 | Princeton Optronics, Inc. | Ohmic contacts and methods for manufacturing the same |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3636618A (en) * | 1970-03-23 | 1972-01-25 | Monsanto Co | Ohmic contact for semiconductor devices |
| US3780359A (en) * | 1971-12-20 | 1973-12-18 | Ibm | Bipolar transistor with a heterojunction emitter and a method fabricating the same |
| GB1390775A (en) * | 1971-12-29 | 1975-04-16 | Gen Electric | Ohmic contact for p-type group iii-v semiconductors |
| US3850688A (en) * | 1971-12-29 | 1974-11-26 | Gen Electric | Ohmic contact for p-type group iii-v semiconductors |
| US3942243A (en) * | 1974-01-25 | 1976-03-09 | Litronix, Inc. | Ohmic contact for semiconductor devices |
| US3890699A (en) * | 1974-06-04 | 1975-06-24 | Us Army | Method of making an ohmic contact to a semiconductor material |
| US4011583A (en) * | 1974-09-03 | 1977-03-08 | Bell Telephone Laboratories, Incorporated | Ohmics contacts of germanium and palladium alloy from group III-V n-type semiconductors |
| US3959522A (en) * | 1975-04-30 | 1976-05-25 | Rca Corporation | Method for forming an ohmic contact |
| US4081824A (en) * | 1977-03-24 | 1978-03-28 | Bell Telephone Laboratories, Incorporated | Ohmic contact to aluminum-containing compound semiconductors |
-
1978
- 1978-05-24 US US05/909,024 patent/US4179534A/en not_active Expired - Lifetime
-
1979
- 1979-05-10 CA CA327,325A patent/CA1124410A/en not_active Expired
- 1979-05-16 SE SE7904301A patent/SE438946B/sv not_active IP Right Cessation
- 1979-05-16 GB GB7916933A patent/GB2021858B/en not_active Expired
- 1979-05-21 DE DE2920444A patent/DE2920444C2/de not_active Expired
- 1979-05-22 IT IT22902/79A patent/IT1114013B/it active
- 1979-05-23 NL NLAANVRAGE7904099,A patent/NL182108C/xx not_active IP Right Cessation
- 1979-05-23 BE BE0/195334A patent/BE876480A/xx not_active IP Right Cessation
- 1979-05-23 FR FR7913142A patent/FR2426976A1/fr active Granted
- 1979-05-24 ES ES480898A patent/ES480898A1/es not_active Expired
- 1979-05-24 JP JP54063348A patent/JPS5932055B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| IT1114013B (it) | 1986-01-27 |
| IT7922902A0 (it) | 1979-05-22 |
| NL182108B (nl) | 1987-08-03 |
| DE2920444C2 (de) | 1982-04-01 |
| BE876480A (fr) | 1979-09-17 |
| GB2021858B (en) | 1982-06-09 |
| DE2920444A1 (de) | 1979-12-06 |
| NL7904099A (nl) | 1979-11-27 |
| GB2021858A (en) | 1979-12-05 |
| ES480898A1 (es) | 1980-01-01 |
| FR2426976B1 (sv) | 1982-06-25 |
| JPS54153585A (en) | 1979-12-03 |
| CA1124410A (en) | 1982-05-25 |
| JPS5932055B2 (ja) | 1984-08-06 |
| FR2426976A1 (fr) | 1979-12-21 |
| NL182108C (nl) | 1988-01-04 |
| US4179534A (en) | 1979-12-18 |
| SE438946B (sv) | 1985-05-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NUG | Patent has lapsed |
Ref document number: 7904301-4 Effective date: 19911209 Format of ref document f/p: F |