NL7904099A - Halfgeleiderinrichtingen met een ohm's contact met n-type halfgeleiders uit de groep iii-v. - Google Patents

Halfgeleiderinrichtingen met een ohm's contact met n-type halfgeleiders uit de groep iii-v.

Info

Publication number
NL7904099A
NL7904099A NL7904099A NL7904099A NL7904099A NL 7904099 A NL7904099 A NL 7904099A NL 7904099 A NL7904099 A NL 7904099A NL 7904099 A NL7904099 A NL 7904099A NL 7904099 A NL7904099 A NL 7904099A
Authority
NL
Netherlands
Prior art keywords
semiconductors
group iii
type
ohms
contact
Prior art date
Application number
NL7904099A
Other languages
English (en)
Other versions
NL182108C (nl
NL182108B (nl
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of NL7904099A publication Critical patent/NL7904099A/nl
Publication of NL182108B publication Critical patent/NL182108B/nl
Application granted granted Critical
Publication of NL182108C publication Critical patent/NL182108C/nl

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45Ohmic electrodes
    • H01L29/452Ohmic electrodes on AIII-BV compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/02Contacts, special

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)
NLAANVRAGE7904099,A 1978-05-24 1979-05-23 Werkwijze voor het vervaardigen van een halfgeleiderinrichting met een samengestelde contactlaag, die een niet-gelijkrichtend contact vormt met een halfgeleidergebied van een uit de groep halfgeleidende iii-v verbindingen samengesteld halfgeleidermateriaal met n-type geleiding. NL182108C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/909,024 US4179534A (en) 1978-05-24 1978-05-24 Gold-tin-gold ohmic contact to N-type group III-V semiconductors

Publications (3)

Publication Number Publication Date
NL7904099A true NL7904099A (nl) 1979-11-27
NL182108B NL182108B (nl) 1987-08-03
NL182108C NL182108C (nl) 1988-01-04

Family

ID=25426530

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7904099,A NL182108C (nl) 1978-05-24 1979-05-23 Werkwijze voor het vervaardigen van een halfgeleiderinrichting met een samengestelde contactlaag, die een niet-gelijkrichtend contact vormt met een halfgeleidergebied van een uit de groep halfgeleidende iii-v verbindingen samengesteld halfgeleidermateriaal met n-type geleiding.

Country Status (11)

Country Link
US (1) US4179534A (nl)
JP (1) JPS5932055B2 (nl)
BE (1) BE876480A (nl)
CA (1) CA1124410A (nl)
DE (1) DE2920444C2 (nl)
ES (1) ES480898A1 (nl)
FR (1) FR2426976A1 (nl)
GB (1) GB2021858B (nl)
IT (1) IT1114013B (nl)
NL (1) NL182108C (nl)
SE (1) SE438946B (nl)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4316209A (en) * 1979-08-31 1982-02-16 International Business Machines Corporation Metal/silicon contact and methods of fabrication thereof
US4301188A (en) * 1979-10-01 1981-11-17 Bell Telephone Laboratories, Incorporated Process for producing contact to GaAs active region
US4360564A (en) * 1981-01-29 1982-11-23 General Electric Company Thin films of low resistance and high coefficients of transmission in the visible spectrum
US4484332A (en) * 1982-06-02 1984-11-20 The United States Of America As Represented By The Secretary Of The Air Force Multiple double heterojunction buried laser device
DE3232837A1 (de) * 1982-09-03 1984-03-08 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen einer 2-ebenen-metallisierung fuer halbleiterbauelemente, insbesondere fuer leistungshalbleiterbauelemente wie thyristoren
US4576659A (en) * 1982-12-02 1986-03-18 International Business Machines Corporation Process for inhibiting metal migration during heat cycling of multilayer thin metal film structures
DE3318683C1 (de) * 1983-05-21 1984-12-13 Telefunken electronic GmbH, 7100 Heilbronn Legierter Kontakt für n-leitendes GaAlAs-Halbleitermaterial
US4510514A (en) * 1983-08-08 1985-04-09 At&T Bell Laboratories Ohmic contacts for semiconductor devices
US4623086A (en) * 1985-03-11 1986-11-18 Mcdonnell Douglas Corporation Process of monitoring for the reflectivity change in indium phase transition soldering
US4866505A (en) * 1986-03-19 1989-09-12 Analog Devices, Inc. Aluminum-backed wafer and chip
US4853346A (en) * 1987-12-31 1989-08-01 International Business Machines Corporation Ohmic contacts for semiconductor devices and method for forming ohmic contacts
JP2817217B2 (ja) * 1989-06-30 1998-10-30 日本電気株式会社 金属・半導体接合を有する半導体装置およびその製造方法
US7368316B2 (en) * 1999-04-23 2008-05-06 The Furukawa Electric Co., Ltd. Surface-emission semiconductor laser device
JP2000307190A (ja) 1999-04-23 2000-11-02 Furukawa Electric Co Ltd:The 面発光型半導体レーザの作製方法
US7881359B2 (en) * 1999-04-23 2011-02-01 The Furukawa Electric Co., Ltd Surface-emission semiconductor laser device
DE10308322B4 (de) * 2003-01-31 2014-11-06 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines elektrischen Kontaktbereiches auf einer Halbleiterschicht und Bauelement mit derartigem Kontaktbereich
JP2004235649A (ja) * 2003-01-31 2004-08-19 Osram Opto Semiconductors Gmbh 電気コンタクト領域を備えたモジュールの製造方法および半導体層列および活性ゾーンを有するモジュール
DE102005024830B4 (de) * 2005-05-27 2009-07-02 Noctron S.A.R.L. Leuchtdioden-Anordnung
EP3740966A4 (en) * 2018-01-16 2021-10-27 Princeton Optronics, Inc. OHMIC CONTACTS AND ASSOCIATED MANUFACTURING PROCESSES

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3636618A (en) * 1970-03-23 1972-01-25 Monsanto Co Ohmic contact for semiconductor devices
US3780359A (en) * 1971-12-20 1973-12-18 Ibm Bipolar transistor with a heterojunction emitter and a method fabricating the same
GB1390775A (en) * 1971-12-29 1975-04-16 Gen Electric Ohmic contact for p-type group iii-v semiconductors
US3850688A (en) * 1971-12-29 1974-11-26 Gen Electric Ohmic contact for p-type group iii-v semiconductors
US3942243A (en) * 1974-01-25 1976-03-09 Litronix, Inc. Ohmic contact for semiconductor devices
US3890699A (en) * 1974-06-04 1975-06-24 Us Army Method of making an ohmic contact to a semiconductor material
US4011583A (en) * 1974-09-03 1977-03-08 Bell Telephone Laboratories, Incorporated Ohmics contacts of germanium and palladium alloy from group III-V n-type semiconductors
US3959522A (en) * 1975-04-30 1976-05-25 Rca Corporation Method for forming an ohmic contact
US4081824A (en) * 1977-03-24 1978-03-28 Bell Telephone Laboratories, Incorporated Ohmic contact to aluminum-containing compound semiconductors

Also Published As

Publication number Publication date
FR2426976B1 (nl) 1982-06-25
IT7922902A0 (it) 1979-05-22
GB2021858A (en) 1979-12-05
GB2021858B (en) 1982-06-09
SE438946B (sv) 1985-05-13
NL182108C (nl) 1988-01-04
SE7904301L (sv) 1979-11-25
DE2920444C2 (de) 1982-04-01
JPS5932055B2 (ja) 1984-08-06
CA1124410A (en) 1982-05-25
FR2426976A1 (fr) 1979-12-21
ES480898A1 (es) 1980-01-01
JPS54153585A (en) 1979-12-03
DE2920444A1 (de) 1979-12-06
US4179534A (en) 1979-12-18
NL182108B (nl) 1987-08-03
BE876480A (fr) 1979-09-17
IT1114013B (it) 1986-01-27

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Legal Events

Date Code Title Description
BA A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
A85 Still pending on 85-01-01
V1 Lapsed because of non-payment of the annual fee